Jun-Lin Tsai

Person

Hsin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Structure having a shallow trench-deep trench isolation region for...
- Patent number 7,372,102
- Issue date May 13, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a shallow trench-deep trench isolation region for...
- Patent number 7,250,344
- Issue date Jul 31, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a shallow trench-deep trench isolation region for...
- Patent number 7,015,086
- Issue date Mar 21, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin current bipolar device with hi-lo base profile
- Patent number 6,747,336
- Issue date Jun 8, 2004
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using P+ buried layer
- Patent number 6,569,730
- Issue date May 27, 2003
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using P+ buried layer
- Patent number 6,423,590
- Issue date Jul 23, 2002
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using P+ buried layer
- Patent number 6,396,126
- Issue date May 28, 2002
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit polysilicon resistor having a silicide extension...
- Patent number 6,340,833
- Issue date Jan 22, 2002
- Taiwan Semiconductor Manufacturing Company
- Ruey-Hsin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistor using P+ buried layer
- Patent number 6,245,609
- Issue date Jun 12, 2001
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of polysilicon field plates to improve high voltage bipolar dev...
- Patent number 6,242,313
- Issue date Jun 5, 2001
- Taiwan Semiconductor Manufacturing Company
- Jei-Feng Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin current bipolar device with hi-lo base profile
- Patent number 6,211,028
- Issue date Apr 3, 2001
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit polysilicon resistor having a silicide extension...
- Patent number 6,165,861
- Issue date Dec 26, 2000
- Taiwan Semiconductor Manufacturing Company
- Ruey-Hsin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field ring to improve the breakdown voltage for a high voltage bipo...
- Patent number 6,162,695
- Issue date Dec 19, 2000
- Taiwan Semiconductor Manufacturing Company
- Jei-Feng Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform sidewall profile etch method for forming low contact leakag...
- Patent number 6,096,629
- Issue date Aug 1, 2000
- Taiwan Semiconductor Manufacturing Company
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Structure having a shallow trench-deep trench isolation region for...
- Publication number 20060063389
- Publication date Mar 23, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a shallow trench-deep trench isolation region for...
- Publication number 20060063349
- Publication date Mar 23, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a shallow trench-deep trench isolation region for...
- Publication number 20050176214
- Publication date Aug 11, 2005
- Kuan-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage transistor using P+ buried layer
- Publication number 20020105054
- Publication date Aug 8, 2002
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High voltage transistor using P+ buried layer
- Publication number 20010017379
- Publication date Aug 30, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Twin current bipolar device with hi-lo base profile
- Publication number 20010010963
- Publication date Aug 2, 2001
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Jun-Lin Tsai
- H01 - BASIC ELECTRIC ELEMENTS

Jun-Lin Tsai

Person

Patents Grantslast 30 patents

Structure having a shallow trench-deep trench isolation region for...

Method of forming a shallow trench-deep trench isolation region for...

Method of forming a shallow trench-deep trench isolation region for...

Twin current bipolar device with hi-lo base profile

High voltage transistor using P&#x0002B; buried layer

High voltage transistor using P&#x0002B; buried layer

High voltage transistor using P&#x0002B; buried layer

Integrated circuit polysilicon resistor having a silicide extension...

High voltage transistor using P&#x0002B; buried layer

Use of polysilicon field plates to improve high voltage bipolar dev...

Twin current bipolar device with hi-lo base profile

Integrated circuit polysilicon resistor having a silicide extension...

Field ring to improve the breakdown voltage for a high voltage bipo...

Uniform sidewall profile etch method for forming low contact leakag...

Patents Applicationslast 30 patents

Structure having a shallow trench-deep trench isolation region for...

Method of forming a shallow trench-deep trench isolation region for...

Method of forming a shallow trench-deep trench isolation region for...

High voltage transistor using P+ buried layer

High voltage transistor using P+ buried layer

Twin current bipolar device with hi-lo base profile

High voltage transistor using P+ buried layer

High voltage transistor using P+ buried layer

High voltage transistor using P+ buried layer

High voltage transistor using P+ buried layer