Jun Suda

Person

Kyoto-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of growing semiconductor crystal
- Patent number 7,625,447
- Issue date Dec 1, 2009
- Japan Science and Technology Agency
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method for manufacturing same
- Patent number 7,622,763
- Issue date Nov 24, 2009
- Japan Science and Technology Agency
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diboride single crystal substrate, semiconductor device using this...
- Patent number 7,297,989
- Issue date Nov 20, 2007
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Boride-based substrate for growing semiconducting layers thereon an...
- Patent number 6,566,218
- Issue date May 20, 2003
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD
- Publication number 20100072485
- Publication date Mar 25, 2010
- KYOTO UNIVERSITY
- Jun Suda
- G02 - OPTICS
Information Patent Application
4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLY...
- Publication number 20090261362
- Publication date Oct 22, 2009
- PANASONIC CORPORATION
- Tetsuzo UEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor device and method for fabricating compound s...
- Publication number 20090072243
- Publication date Mar 19, 2009
- KYOTO UNIVERSITY
- Jun Suda
- G02 - OPTICS
Information Patent Application
Field effect transistor and method for manufacturing same
- Publication number 20060194379
- Publication date Aug 31, 2006
- Jun Suda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of growing semiconductor crystal
- Publication number 20060180077
- Publication date Aug 17, 2006
- Jun Suda
- C30 - CRYSTAL GROWTH
Information Patent Application
Diboride single crystal substrate, semiconductor device using this...
- Publication number 20060102924
- Publication date May 18, 2006
- Shigeki Otani
- C30 - CRYSTAL GROWTH
Information Patent Application
4H-polytype gallium nitride-based semiconductor device on a 4H-poly...
- Publication number 20050218414
- Publication date Oct 6, 2005
- Tetsuzo Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-nitride semiconductor substrate and its manufacturing method
- Publication number 20050066885
- Publication date Mar 31, 2005
- Satoshi Kamiyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Boride-based substrate for growing semiconducting layers thereon an...
- Publication number 20020038892
- Publication date Apr 4, 2002
- NATIONAL INSTITUTE FOR MATERIALS SCIENCE and KYOCERA CORPORATION
- Shigeki Otani
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Method of growing semiconductor crystal

Field effect transistor and method for manufacturing same

Diboride single crystal substrate, semiconductor device using this...

Boride-based substrate for growing semiconducting layers thereon an...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING METHOD

4H-POLYTYPE GALLIUM NITRIDE-BASED SEMICONDUCTOR DEVICE ON A 4H-POLY...

Compound semiconductor device and method for fabricating compound s...

Field effect transistor and method for manufacturing same

Method of growing semiconductor crystal

Diboride single crystal substrate, semiconductor device using this...

4H-polytype gallium nitride-based semiconductor device on a 4H-poly...

Group III-nitride semiconductor substrate and its manufacturing method

Boride-based substrate for growing semiconducting layers thereon an...