Jungwoo JOH

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitor, integrated circuit and manufacturing process for...
- Patent number 12,113,062
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 12,046,666
- Issue date Jul 23, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strapped copper interconnect for improved electromigration reliability
- Patent number 12,027,468
- Issue date Jul 2, 2024
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-on gallium nitride based transistor with p-type gate
- Patent number 11,978,790
- Issue date May 7, 2024
- Texas Instruments Incorporated
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Monolithic integration of high and low-side GaN FETs with screening...
- Patent number 11,888,027
- Issue date Jan 30, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 11,177,378
- Issue date Nov 16, 2021
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT wafer probe current collapse screening
- Patent number 11,067,620
- Issue date Jul 20, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Grant
Gallium nitride (GaN) based transistor with multiple p-GaN blocks
- Patent number 11,049,960
- Issue date Jun 29, 2021
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 10,964,803
- Issue date Mar 30, 2021
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multiple GaN-based alloy layers
- Patent number 10,861,943
- Issue date Dec 8, 2020
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,707,324
- Issue date Jul 7, 2020
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 10,680,093
- Issue date Jun 9, 2020
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group IIIA-N HEMT with a tunnel diode in the gate stack
- Patent number 10,381,456
- Issue date Aug 13, 2019
- Texas Instruments Incorporated
- Chang Soo Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus to model and monitor time dependent dielectric...
- Patent number 10,192,799
- Issue date Jan 29, 2019
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus to model and monitor time dependent dielectric...
- Patent number 10,014,231
- Issue date Jul 3, 2018
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT having conduction barrier between drain fingertip and source
- Patent number 9,882,041
- Issue date Jan 30, 2018
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device and method having a gate isolating structure
- Patent number 9,553,151
- Issue date Jan 24, 2017
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and methods for qualifying HEMT FET devices
- Patent number 9,476,933
- Issue date Oct 25, 2016
- Texas Instruments Incorporated
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET dielectric reliability enhancement
- Patent number 9,112,011
- Issue date Aug 18, 2015
- Texas Instruments Incorporated
- Asad Mahmood Haider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device and method having a gate isolating structure
- Patent number 9,054,027
- Issue date Jun 9, 2015
- Texas Instruments Incorporated
- Sameer Pendharkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET dielectric reliability enhancement
- Patent number 8,916,427
- Issue date Dec 23, 2014
- Texas Instruments Incorporated
- Asad Mahmood Haider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RESURF III-nitride HEMTs
- Patent number 8,759,879
- Issue date Jun 24, 2014
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE
- Publication number 20240405024
- Publication date Dec 5, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PLATES FOR INTEGRATED CIRCUITS
- Publication number 20240332369
- Publication date Oct 3, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Fuchao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH BAND-GAP DEVICES WITH SELF-ALIGNED CONTACT
- Publication number 20240322006
- Publication date Sep 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20240274705
- Publication date Aug 15, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE
- Publication number 20240213333
- Publication date Jun 27, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Fuchao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20240120383
- Publication date Apr 11, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...
- Publication number 20240047529
- Publication date Feb 8, 2024
- TEXAS INSTRUMENTS INCORPORATED
- DONG SEUP LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...
- Publication number 20230197784
- Publication date Jun 22, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...
- Publication number 20230134698
- Publication date May 4, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM-NITRIDE DEVICE FIELD-PLATE SYSTEM
- Publication number 20230101543
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE HAVING A COMBINATION OF SURFACE PASSIVATION...
- Publication number 20230094094
- Publication date Mar 30, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FINGER LAYOUT TRANSISTOR
- Publication number 20230061337
- Publication date Mar 2, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN CONTACT EXTENSION LAYOUT FOR HARD SWITCHING ROBUSTNESS
- Publication number 20220231156
- Publication date Jul 21, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRING CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20220208755
- Publication date Jun 30, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE
- Publication number 20220173234
- Publication date Jun 2, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo Suh
- B82 - NANO-TECHNOLOGY
Information Patent Application
ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...
- Publication number 20220130988
- Publication date Apr 28, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Qhalid RS Fareed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20210280702
- Publication date Sep 9, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAPPED COPPER INTERCONNECT FOR IMPROVED ELECTROMIGRATION RELIABILITY
- Publication number 20210257312
- Publication date Aug 19, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo Joh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20210159329
- Publication date May 27, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20200303535
- Publication date Sep 24, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS
- Publication number 20200287033
- Publication date Sep 10, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Chang Soo SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS
- Publication number 20200185499
- Publication date Jun 11, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20200161461
- Publication date May 21, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT WAFER PROBE CURRENT COLLAPSE SCREENING
- Publication number 20200064394
- Publication date Feb 27, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20190319111
- Publication date Oct 17, 2019
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK
- Publication number 20180323297
- Publication date Nov 8, 2018
- TEXAS INSTRUMENTS INCORPORATED
- CHANG SOO SUH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS TO MODEL AND MONITOR TIME DEPENDENT DIELECTRIC...
- Publication number 20180308773
- Publication date Oct 25, 2018
- Texas Instruments Incorporated
- Dong Seup Lee
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND APPARATUS TO MODEL AND MONITOR TIME DEPENDENT DIELECTRIC...
- Publication number 20180190550
- Publication date Jul 5, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE
- Publication number 20180151713
- Publication date May 31, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Jungwoo JOH
- H01 - BASIC ELECTRIC ELEMENTS

Jungwoo JOH

Person

Patents Grantslast 30 patents

Gallium nitride transistor with a doped region

Fringe capacitor, integrated circuit and manufacturing process for...

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Strapped copper interconnect for improved electromigration reliability

Normally-on gallium nitride based transistor with p-type gate

Monolithic integration of high and low-side GaN FETs with screening...

Gallium nitride transistor with a doped region

HEMT having conduction barrier between drain fingertip and source

HEMT wafer probe current collapse screening

Gallium nitride (GaN) based transistor with multiple p-GaN blocks

Gallium nitride transistor with a doped region

Transistor with multiple GaN-based alloy layers

Group IIIA-N HEMT with a tunnel diode in the gate stack

HEMT having conduction barrier between drain fingertip and source

Group IIIA-N HEMT with a tunnel diode in the gate stack

Method and apparatus to model and monitor time dependent dielectric...

Method and apparatus to model and monitor time dependent dielectric...

HEMT having conduction barrier between drain fingertip and source

III-nitride device and method having a gate isolating structure

Apparatus and methods for qualifying HEMT FET devices

FET dielectric reliability enhancement

III-nitride device and method having a gate isolating structure

FET dielectric reliability enhancement

RESURF III-nitride HEMTs

Patents Applicationslast 30 patents

INTEGRATED DEVICES WITH CONDUCTIVE BARRIER STRUCTURE

FIELD PLATES FOR INTEGRATED CIRCUITS

HIGH BAND-GAP DEVICES WITH SELF-ALIGNED CONTACT

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

III-N DEVICE WITH PLANARIZED TOPOLOGICAL STRUCTURE

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

GAN DEVICES WITH MODIFIED HETEROJUNCTION STRUCTURE AND METHODS OF M...

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

MONOLITHIC INTEGRATION OF HIGH AND LOW-SIDE GAN FETS WITH SCREENING...

APPARATUS AND METHOD TO CONTROL THRESHOLD VOLTAGE AND GATE LEAKAGE...

GALLIUM-NITRIDE DEVICE FIELD-PLATE SYSTEM

GALLIUM NITRIDE DEVICE HAVING A COMBINATION OF SURFACE PASSIVATION...

HIGH VOLTAGE FINGER LAYOUT TRANSISTOR

DRAIN CONTACT EXTENSION LAYOUT FOR HARD SWITCHING ROBUSTNESS

FRING CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

NORMALLY-ON GALLIUM NITRIDE BASED TRANSISTOR WITH P-TYPE GATE

ELECTRONIC DEVICE WITH ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR,...

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

STRAPPED COPPER INTERCONNECT FOR IMPROVED ELECTROMIGRATION RELIABILITY

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE

GALLIUM NITRIDE (GaN) BASED TRANSISTOR WITH MULTIPLE p-GaN BLOCKS

TRANSISTOR WITH MULTIPLE GAN-BASED ALLOY LAYERS

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

HEMT WAFER PROBE CURRENT COLLAPSE SCREENING

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

METHOD AND APPARATUS TO MODEL AND MONITOR TIME DEPENDENT DIELECTRIC...

METHOD AND APPARATUS TO MODEL AND MONITOR TIME DEPENDENT DIELECTRIC...

HEMT HAVING CONDUCTION BARRIER BETWEEN DRAIN FINGERTIP AND SOURCE