Junichi TAKINO

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group-III nitride substrate
- Patent number 12,049,710
- Issue date Jul 30, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus for a group-III nitride crystal comprising...
- Patent number 11,879,184
- Issue date Jan 23, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing group III nitride crystal by reacting an ox...
- Patent number 11,795,573
- Issue date Oct 24, 2023
- Osaka University
- Yusuke Mori
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a group III-nitride crystal comprising sup...
- Patent number 11,753,739
- Issue date Sep 12, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal, group III nitride substrate, and method...
- Patent number 11,713,516
- Issue date Aug 1, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group-III nitride substrate
- Patent number 11,713,517
- Issue date Aug 1, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal, group III nitride substrate, and method...
- Patent number 11,624,128
- Issue date Apr 11, 2023
- Panasonic Holdings Corporation
- Yusuke Mori
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Group-III nitride substrate containing carbon at a surface region t...
- Patent number 11,396,716
- Issue date Jul 26, 2022
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing Group-III nitride semiconductor crystal inc...
- Patent number 11,186,922
- Issue date Nov 30, 2021
- Panasonic Corporation
- Masayuki Hoteida
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing a group III-nitride crystal comprising sup...
- Patent number 11,155,931
- Issue date Oct 26, 2021
- Osaka University
- Yusuke Mori
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20240352623
- Publication date Oct 24, 2024
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE...
- Publication number 20240309551
- Publication date Sep 19, 2024
- Panasonic Holdings Corporation
- Junichi TAKINO
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
- Publication number 20240271323
- Publication date Aug 15, 2024
- Panasonic Holdings Corporation
- Junichi TAKINO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20230323563
- Publication date Oct 12, 2023
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS FOR GROUP-III NITRIDE CRYSTAL AND MANUFACTU...
- Publication number 20220411962
- Publication date Dec 29, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL
- Publication number 20220411964
- Publication date Dec 29, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS FOR GROUP-III COMPOUND SEMICONDUCTOR CRYSTAL
- Publication number 20220403547
- Publication date Dec 22, 2022
- Panasonic Holdings Corporation
- Masayuki HOTEIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...
- Publication number 20220341056
- Publication date Oct 27, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING AND GROUP III NITRIDE CRYSTAL
- Publication number 20220325437
- Publication date Oct 13, 2022
- Panasonic Holdings Corporation
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
- Publication number 20220056614
- Publication date Feb 24, 2022
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL
- Publication number 20220002904
- Publication date Jan 6, 2022
- OSAKA UNIVERSITY
- Yusuke MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...
- Publication number 20210388528
- Publication date Dec 16, 2021
- PANASONIC CORPORATION
- Yusuke MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...
- Publication number 20210388529
- Publication date Dec 16, 2021
- PANASONIC CORPORATION
- Yusuke MORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III NITRIDE SUBSTRATE
- Publication number 20210087707
- Publication date Mar 25, 2021
- PANASONIC CORPORATION
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE
- Publication number 20210006042
- Publication date Jan 7, 2021
- Panasonic Intellectual Property Management Co., Ltd.
- AKIHIKO ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL
- Publication number 20200385886
- Publication date Dec 10, 2020
- PANASONIC CORPORATION
- MASAYUKI HOTEIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL
- Publication number 20200255975
- Publication date Aug 13, 2020
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III N...
- Publication number 20200017993
- Publication date Jan 16, 2020
- OSAKA UNIVERSITY
- Yusuke MORI
- C30 - CRYSTAL GROWTH

Junichi TAKINO

Person

Patents Grantslast 30 patents

Group-III nitride substrate

Manufacturing apparatus for a group-III nitride crystal comprising...

Manufacturing method for a group-III nitride crystal that requires...

Method of manufacturing group III nitride crystal by reacting an ox...

Method for manufacturing a group III-nitride crystal comprising sup...

Group III nitride crystal, group III nitride substrate, and method...

Group-III nitride substrate

Group III nitride crystal, group III nitride substrate, and method...

Group-III nitride substrate containing carbon at a surface region t...

Apparatus for producing Group-III nitride semiconductor crystal inc...

Method for manufacturing a group III-nitride crystal comprising sup...

Patents Applicationslast 30 patents

GROUP-III NITRIDE SUBSTRATE

MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE...

DEVICE AND METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL

GROUP-III NITRIDE SUBSTRATE

MANUFACTURING APPARATUS FOR GROUP-III NITRIDE CRYSTAL AND MANUFACTU...

MANUFACTURING METHOD FOR GROUP-III NITRIDE CRYSTAL

MANUFACTURING APPARATUS FOR GROUP-III COMPOUND SEMICONDUCTOR CRYSTAL

GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...

METHOD OF MANUFACTURING AND GROUP III NITRIDE CRYSTAL

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...

GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD...

GROUP-III NITRIDE SUBSTRATE

GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE

APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL

METHOD OF MANUFACTURING GROUP-III NITRIDE CRYSTAL

GROUP-III NITRIDE SUBSTRATE AND METHOD OF MANUFACTURING GROUP-III N...