Patent Application
20220403547
This application claims priority of Japanese Patent Application No. 2021-102689 filed on Jun. 21, 2021, the content of which is incorporated herein by reference.
The present disclosure relates to a manufacturing apparatus for a group-III compound semiconductor crystal. The present disclosure relates, in particular, to a manufacturing apparatus for a group-III compound semiconductor crystal, using a vapor phase epitaxy method by supplying gas toward a substrate to be processed disposed in a reaction container.
Group-III compound semiconductors, such as GaN, AlGaN, InGaN, Ga2O3, and the like, are used in the fields of, for example, optical devices such as light emitting diodes and semiconductor lasers, and hetero junction high-speed electronic devices. Hydride vapor phase epitaxy (HVPE method) has been practically used as one of the manufacturing methods for GaN that is a group-III compound semiconductor, according to which a group-III elemental metal (such as, for example, Ga metal) and a chloride gas (such as, for example, HCl gas) are reacted with each other to produce a group-III elemental metallic chloride gas (GaCl gas), and GaN is grown from the group-III elemental metallic chloride and a nitrogen element-containing gas (such as, for example, NH3 gas) (see Japanese Laid-Open Patent Publication No. 52-23600, for example).
With the HVPE method, however, a problem arises that, during the crystal growth, NH4Cl (ammonium chloride), which is a by-product, is generated in a large amount and clogs a gas discharge pipe of the manufacturing apparatus and blocks the crystal growth. Oxygen vapor phase epitaxy (OVPE method) has been proposed as a method to solve the problem, according to which a group-III elemental metal (such as, for example, Ga metal) and an oxidant (such as, for example, H2O gas) are reacted with each other to produce a group-III elemental metallic oxide gas (Ga2O gas) and GaN is grown from the group-III elemental metallic oxide gas and a nitrogen element-containing gas (such as, for example, NH3 gas) (see, WO2015-053341 for example).
Compared to the growth rate of about 1 μm/h typically acquired in other crystal growth methods such as metalorganic chemical vapor deposition (MOCVD method) and molecular beam epitaxy (MBE method), a feature of the HYPE method and the OVPE method is that an extremely high crystal growth rate of 10 μm/h or higher, or 100 μm/h or higher can be obtained. The HYPE method and the OVPE method are therefore used for manufacturing self-supporting GaN substrates.
However, as depicted in
The present disclosure was conceived in view of the situations, and it is therefore one non-limiting and exemplary embodiment provides a manufacturing apparatus for a group-III compound semiconductor crystal, capable of suppressing the adhesion of sediments to the inner wall surface of the reaction container, and thereby improving the production yield.
A manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure comprises a reaction container. The reaction container has a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber that produces therein a group-III element-containing gas, and a raw material gas nozzle that leads the produced group-III element-containing gas out of the raw material reaction chamber, and sprays the produced group-III element-containing gas toward the crystal growth section. The crystal growth section has a substrate supporting member that holds a seed substrate on an upper face thereof and rotates the seed substrate, on which a group-III compound semiconductor crystal grows, and reactive gas nozzles that spray reactive gases for reacting with the group-III element-containing gas to produce the group-III compound semiconductor crystal. The gas flow channel includes a first flow channel which is disposed surrounding a spraying orifice of the raw material gas nozzle and spraying orifices of the reactive gas nozzles, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in which the gases sprayed from both of the raw material gas nozzle and the reactive gas nozzle flow in the reaction container sequentially passing through the first flow channel, the connection portion, and the second flow channel. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.
According to the manufacturing apparatus for a group-III compound semiconductor crystal of the present disclosure, the production yield of a group-III compound semiconductor crystal can be improved by suppressing generation of sediments on the inner wall surface of the apparatus on the upstream side of the seed substrate, and suppressing the mixing of particles into the group-III compound semiconductor crystal growing on the seed substrate.
Additional benefits and advantages of the disclosed embodiments will be apparent from the specification and figures. The benefits and/or advantages may be individually provided by the various embodiments and features of the specification and drawings disclosure, and need not all be provided in order to obtain one or more of the same.
The present disclosure will become readily understood from the following description of non-limiting and exemplary embodiments thereof made with reference to the accompanying drawings, in which like parts are designated by like reference numeral and in which:
In a first embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal is provided. The manufacturing apparatus comprises a reaction container. The reaction container includes a raw material reaction section, a crystal growth section, and a gas flow channel. The raw material reaction section has a raw material reaction chamber that produces therein a group-III element-containing gas, and a raw material gas nozzle that leads the produced group-III element-containing gas out of the raw material reaction chamber, and sprays the produced group-III element-containing gas toward the crystal growth section. The crystal growth section has a substrate supporting member that holds a seed substrate on an upper face thereof and rotates the seed substrate, on which a group-III compound semiconductor crystal grows, and reactive gas nozzles that spray reactive gases for reacting with the group-III element-containing gas to produce the group-III compound semiconductor crystal. The gas flow channel includes a first flow channel that is disposed surrounding a spraying orifice of the raw material gas nozzle and spraying orifices of the reactive gas nozzles, a second flow channel, and a connection portion. The first flow channel has a first opening, and the second flow channel has a second opening. The area of the second opening is configured to be larger than the area of the first opening. The connection portion connects the first opening and the second opening with each other. The gas flow channel forms a gas flow path in which the gases sprayed from both of the raw material gas nozzle and the reactive gas nozzles flow in the reaction container sequentially passing through the first flow channel, the connection portion, and the second flow channel. The substrate supporting member is disposed inside the gas flow path and located on the downstream side of the first opening.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein the connection portion is comprised of a tapered shape expanding from the first opening toward the second opening.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein the substrate supporting member is disposed on the downstream side of the second opening.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein a difference between the area of the first opening and the area of the upper face of the substrate supporting member is within 30% of the area of the upper face.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein a difference between an area acquired by subtracting the area of the upper face of the substrate supporting member from the area of the second opening and the area of the first opening is within 50% of the area of the first opening.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein the first flow channel and the second flow channel are each comprised of a cylindrical shape, and a difference between a vertical distance from the raw material gas nozzle to the upper face of the substrate supporting member and a vertical distance from the spraying orifice of the raw material gas nozzle to the second opening is within 30% of a vertical distance from the raw material gas nozzle to the upper face.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein the raw material gas nozzle is disposed such that a spraying direction of the spraying orifice thereof is directed toward the upper face of the substrate supporting member.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein the reactive gas nozzles are disposed such that spraying directions of the spraying orifices thereof are inclined with respect to the upper face of the substrate supporting member.
In one embodiment, a manufacturing apparatus for a group-III compound semiconductor crystal according to the first embodiment is provided, wherein the reactive gas nozzles are disposed such that the spraying directions of the spraying orifices thereof above the upper face of the substrate supporting member are deflected with respect to the radial direction of the rotation of the seed substrate.
Hereinafter, a manufacturing apparatus for a group-III compound semiconductor crystal according to exemplary embodiments of the present disclosure will be described below with reference to the accompanying drawings. In the drawings, members substantially identical to each other are denoted by the same reference numeral.
The first embodiment of the present disclosure will be described below with reference to
The manufacturing apparatus 1 for a group-III compound semiconductor crystal according to the embodiment depicted in
A heating element 16 is disposed on the outer circumferential portion of the reaction container 20 to maintain a constant temperature in the raw material reaction section 5 and the crystal growth section 6. Unreacted raw material gases of the group-III element-containing gas and the reactive gas, as well as carrier gases such as H2 or N2 are discharged from a gas outlet 17 disposed on the downstream side of the seed substrate 11.
According to the manufacturing apparatus 1 for a group-III compound semiconductor crystal of the embodiment, generation of sediments on the inner wall surface of the apparatus located on the upstream side of the seed substrate 11 can be suppressed, and mixing of particles into the group-III compound semiconductor crystal growing on the seed substrate can be suppressed.
Constituent members of the manufacturing apparatus 1 for a group-III compound semiconductor crystal according to the embodiment depicted in
Raw material reaction section 5 includes a raw material reaction chamber 2 and a raw material gas nozzle 8. In this embodiment, the raw material reaction section 5 has a cylindrical shape body. Group-III element-containing gases are produced in the raw material reaction section 5.
A raw material container 3 accommodating a starting Ga source 4 which is used as a group-III element-containing source is disposed in the raw material reaction chamber 2. The raw material reaction chamber 2 is connected to a reactive gas supply pipe 7, and the reactive gas to react with the starting Ga source is introduced into the raw material reaction chamber 2 by the reactive gas supply pipe 7. The temperature inside of the raw material reaction chamber 2 is maintained to be a desired temperature by a first heater 14 of a heating element 16. It is preferred that the starting Ga source 4 and the reactive gas react with each other in the raw material reaction chamber 2 which is maintained to be at 900° C. or higher and 1,300° C. or lower by the first heater 14 to produce group-III element-containing gases.
Methods for producing group-III element-containing gases include a method of oxidizing a group-III element-containing source and a method of reducing a group-III element-containing source.
A reaction system, in which metallic Ga is used as the starting Ga source 4 and oxidizing gas H2O is used as a reactive gas, is described as the method of oxidizing a group-III element-containing source. In this case, as expressed in formula (1) below, in the state where heating is executed, the introduced H2O gas reacts with the metal Ga to produce group-III element-containing gas G2O.
2Ga+H2O→Ga2O+H2
In addition to Ga, Al, In, and the like are also usable as group-III element-containing sources. In the case with any of the above, a group-III oxide gas is produced.
A reaction system, in which Ga2O3 is used as the starting Ga source 4 and reducing gas H2 is used as a reactive gas, is described as the method of reducing a group-III element-containing source. As expressed in formula (2) below, in the state where heating is executed, the introduced H2 gas reacts with Ga2O3 to produce group-III element-containing gas Ga2O.
Ga2O3+2H2→Ga2O+2H2O
In addition to Ga2O3, Al2O3, In2O3, and the like are also usable as group-III element-containing sources. In the case with any of the above, a group-III oxide gas is produced.
Inert gases, such as Ar or N2, or H2 gas, can be used as carrier gases for oxidizing gases or reducing gases.
The group-III element-containing gas produced in the raw material reaction chamber 2 such as, for example, the Ga2O gas is led out by the raw material gas nozzle 8 disposed on the downstream side of the raw material reaction section 5, and sprayed toward the crystal growth section 6. The raw material gas nozzle 8 can be provided with separate gas discharge outlets disposed on the inner circumference or the outer circumference thereof to suppress the adhesion of sediments including group-III compound semiconductor crystals to the inner wall surface of the manufacturing apparatus 1. It is not limited to, but inert gases such as Ar or N2, or H2 gas can be used as the separate gas. The inner diameter of the raw material gas nozzle 8 is preferably more than 0 mm and 100 mm or smaller, and is more preferably 20 mm or larger and 60 mm or smaller, but not limited to. The thickness of the raw material gas nozzle 8 is preferably 0.5 mm or larger and 10 mm or smaller, and is more preferably 1 mm or larger and 3 mm or smaller, but not limited to.
The crystal growth section 6 includes a substrate supporting member 12 and reactive gas nozzles 9. In this embodiment, the crystal growth section 6 has a cylindrical shape body. In the crystal growth section 6, group-III element-containing gas and reactive gas (nitrogen element-containing gas or oxygen element-containing gas) react with each other, and group-III compound semiconductor crystals grow on the seed substrate.
The substrate supporting member 12 may be, for example, a substrate susceptor. The seed substrate 11 is supported on the upper face 12a of the substrate supporting member 12. The shape of the substrate supporting member 12 is not limited to, but can be configured not to have a structure that inhibits crystal growth. For example, if a structure on which crystals may grow is present near the crystal growth surface on the seed substrate 11, a circulating flow may generate and sediments may adhere to the structure, which deteriorate the uniformity of the group-III compound semiconductor crystal film on the seed substrate 11. In this embodiment, the seed substrate 11 and the substrate supporting member 12 each have a circular shape. For the material of the substrate supporting member 12, for example, ceramic such as carbon, SiC-coated carbon, PG-coated carbon, PBN-coated carbon, or SiC, or molybdenum, iron, cobalt, nickel, or alloys containing any of these as the main components, are usable.
The substrate supporting member 12 is connected to a rotating shaft 13, by which the seed substrate 11 can be rotated during the growth of group-III compound semiconductor crystals. Preferably, the rotating shaft 13 has a mechanism capable of controlling rotations up to 3,000 rpm.
The reactive gas nozzles 9 spray reactive gas (such as nitrogen element-containing gas or oxygen element-containing gas) toward the seed substrate 11 to react with the group-III element-containing gas for producing a group-III compound semiconductor crystal. In the manufacturing apparatus 1 for a group-III compound semiconductor crystal depicted in
As depicted in
In this embodiment, each of the reactive gas nozzles 9 is disposed such that, in the planar view of
In the crystal growth section 6, a crystal of a group-III compound semiconductor such as GaN or Ga2O3 can be grown on the seed substrate 11. In the case when a GaN crystal is grown, nitrogen element-containing gas such as NH3 gas, NO gas, NO2 gas, N2H2 gas, or N2H4 gas can be used. In the case when a Ga2O3 crystal is grown, oxygen element-containing gas such as O2 gas or H2O2O gas can be used. Similar to the raw material gas nozzle 8, the reactive gas nozzles 9 can be provided with separate gas discharge outlets disposed on the inner circumference or the outer circumference thereof to suppress the adhesion of sediments including group-III compound semiconductor crystals to the inner wall surface of the manufacturing apparatus 1. It is not limited to, but inert gases such as Ar or N2, or an H2 gas can be used as the separate gas.
The inner diameter of each of the reactive gas nozzles 9 is not limited, but preferably is more than 0 mm and 30 mm or smaller, and more preferably is in a range from 3 mm to 15 mm. The inclination angle θa of each of the reactive gas nozzles 9 is not limited, but preferably is more than 0 degree and smaller than 90 degrees, and more preferably is in a range from 5 degrees to 60 degrees. The deflection angle θb of each of the reactive gas nozzles 9 is not limited, but preferably is more than 0 degree and smaller than 90 degrees, and more preferably is in a range from 5 degrees to 45 degrees.
To promote the generation of the group-III compound semiconductor crystal in the crystal growth region S2, the reactive gas nozzles 9 can be heated to establish a state in which the nitrogen element-containing gas or the oxygen element-containing gas in the reactive gas nozzles 9 is decomposed at a predetermined ratio. In this embodiment, similar as the raw material reaction chamber 2, the reactive gas nozzles 9 are heated by the first heater 14 of the heating element 16 disposed in the outer circumferential portion of the reactive gas nozzles 9.
The gas flow channel 10 is defined by the crystal growth section 6 with a cylindrical shape body. The gas flow channel 10 includes a first flow channel 10A, a second flow channel 10B, and a connection portion 10C. As depicted in
The connection position between the first flow channel 10A and the connection portion 10C is not limited to, but can be located above the upper face 12a of the substrate supporting member 12. In this embodiment, the difference between the vertical distance from the front end of the spraying orifice of the raw material gas nozzle 8 to the upper face 12a of the substrate supporting member 12 and the vertical distance from the front end of the spraying orifice of the raw material gas nozzle 8 to the plane of the second opening 10B1 is preferably within 30% and more preferably within 10% of the vertical distance from the front end of the spraying orifice of the raw material gas nozzle 8 to the upper face 12a of the substrate supporting member 12.
The difference between the area acquired by subtracting the area of the upper face 12a of the substrate supporting member from the area of the second opening 10B1 and the area of the first opening 10A1 is not limited to, but is preferably within 50% and more preferably within 10% of the area of the first opening 10A1. In this manner, the gas flow channel 10 forms a gas flow path through which the gases sprayed from the raw material gas nozzle and the reactive gas nozzles flow in the reaction container 20. By keeping the ratio of the cross-sectional area of the flow pass in the first flow channel 10A on the upstream side of the gas flow path to that of the flow pass in the second flow channel 10B, the group-III element-containing gas and the reactive gas flow at a constant flow rate in the gas flow path formed by the gas flow channel 10, thereby the backward flow of gases can be suppressed, and the adhesion of sediments including group-III compound semiconductor crystals to the inner wall surface of the manufacturing apparatus 1 can be suppressed.
The difference between the area of the first opening 10A1 and the area of the upper face 12a of the substrate supporting member is not limited to, but is preferably within 30% and is more preferably within 10% of the area of the upper face 12a of the substrate supporting member. By keeping the ratio of the area of the first opening 10A1 and the area of the upper surface 12a of the substrate holding member constant, the group-III element-containing gas sprayed from the raw material gas nozzle 8 and the reactive gas sprayed from the reactive gas nozzles 9 in the first flow channel 10A flow in the gas flow path formed by the gas flow channel 10, and are conveyed onto the seed substrate 11 without spreading around, and thud the utilization efficiency of the gases can be improved.
For the material of the gas flow channel 10, for example, ceramic such as quartz, carbon, SiC-coated carbon, PG-coated carbon, PBN-coated carbon, SiC, or molybdenum, iron, cobalt, nickel, or an alloy containing any of the above as the main component, can be used.
The group-III element-containing gas and the reactive gas flowing in the gas flow path formed by the gas flow channel 10 are mixed with each other in the mixing region S1. The mixing region S1 is not limited to, but can be located at a position above the surface of the seed substrate 11 toward the raw material gas nozzle 8. The mixed raw material gases react on the seed substrate 11 in the growth region S2 and a group-III compound semiconductor crystal is grown thereon. The mixing region S1 and the growth region S2 are maintained at a desired temperature to promote the reaction of the mixed raw material gases. In this embodiment, a second heater 15 of the heating element is disposed on the outer circumferential portion of the mixing region S1 and the growth region S2. Preferably the temperature of the second heater 15 is maintained at 900° C. or higher and 1,400° C. or lower for the growth of the group-III compound semiconductor crystal.
According to the above configuration, the utilization efficiency of the raw material gas can be improved by increasing the transportation e efficiency of the raw material gas to the seed substrate 11, and the adhesion of sediments to the inner wall surface of the manufacturing apparatus 1 can be suppressed. The production yield of the group-III compound semiconductor crystals can thereby be improved.
In Example 1, the conditions for the manufacturing method of GaN, which is one of the group-III compound semiconductor crystals according to the embodiment of the present disclosure, were specifically designed as below, and a GaN crystal was grown on the seed substrate 11 in the manufacturing apparatus 1 depicted in
The inner diameter of the first flow channel 10A and the outer diameter of the substrate supporting member 12 were both set to be 120 mm. The inner diameter of the second flow channel 10B was set to be 170 mm. The angle a formed by the inner wall surface of the connection portion 10C and the plane of the second opening 10B1 was set to be 45 degrees. The second opening 10B1 was disposed at the same height as the surface of the substrate supporting member 12. The inner diameter of the raw material gas nozzle 8 was set to be 50 mm. The number of the disposed reactive gas nozzles 9 was eight and the inner diameters of all thereof were set to be 5 mm. The inclination angle θa was set to be 45 degrees with respect to the downward vertical direction and the deflection angle Ob was arranged such that in the planar view in
The growth conditions were as follows. A piece of metal Ga was placed in the raw material container 3 as the starting Ga source. Under a pressure of 1.0×105 Pa, H2O gas produced from 5 SLM of H2 gas and 20 SCCM of O2 gas was introduced from the reactive gas supply pipe 7 to produce Ga2O gas as the raw material gas. The produced raw material gas Ga2O was sprayed from the raw material gas nozzle 8 toward the GaN single crystal substrate in the crystal growth section. 5 SLM of H2 gas and 3 SLM of N2 gas were discharged from the separate gas discharge outlets disposed on the outer circumference of the raw material gas nozzles 8. On the other hand, nitrogen element-containing gases NH3 and N2 gas were used as the reactive gas. Under a pressure of 1.0×105 Pa, 1 SLM of NH3 gas and 9 SLM of N2 gas were introduced and were sprayed from the reactive gas nozzles 9 toward the GaN single crystal substrate. 10 SLM of H2 gas and 20 SLM of N2 gas were discharged from the separate gas discharge outlets disposed on the inner or the outer circumference of the reactive gas nozzles 9. The electric power for each of the first heater 14 and the second heater 15 in the outer circumferential portion of the reaction container 20 was supplied such that the temperature of the first heater 14 was maintained at 1,150° and that of the second heater 15 was maintained at 1,200° C. The substrate supporting member 12 was rotated at 1,000 RPM.
In Example 2, a crystal of GaN was grown on the seed substrate 11 under the same conditions as those in Example 1 except the fact that the angle a formed by the inner wall surface of the connection portion 10C and the plane of the second opening 10B1 in the side view in
In example 3, a crystal of GaN was grown on the seed substrate 11 under the same conditions as those in Example 1 except the fact that, assuming that the vertical direction from the substrate supporting member 12 toward the raw material gas nozzle 8 shown in in
In each of Examples 1 to 3, Comparative Example 1, and Reference Example 1, the thermo-fluid analysis was conducted to evaluate the adhesion rate of sediments including group-III compound semiconductor crystals to the inner wall surface of the gas flow channel 10, the growth rate of GaN on the GaN single crystal substrate, and the in-plane distribution of the growth rate. The adhesion rate of sediments to the inner wall surface of the gas flow channel 10 was evaluated at three points of heights P1, P2, and P3 depicted in
Table 1 shows the evaluation results for Example 1 and Comparative Example 1. As shown in Table 1, the adhesion rate of sediments to the inner wall surface of the gas flow channel 10 decreased in the order of the value at P3, P2, and P1, that is, decreasing toward the upstream side. It was found that the adhesion rate of sediments at P1 on the inner wall surface of the gas flow channel 10 located on the upstream of the seed substrate 11 in Example 1 was four times slower compared to that of Comparative Example 1. The in-plane distribution of the growth rate of the GaN crystal on the seed substrate 11 in Comparative Example 1 had a higher value as about 1.7 times as that of Example 1.
Since the adhesion of sediments to the inner wall surface of the gas flow channel 10 on the upstream side of the seed substrate 11 most significantly involve in the mixing of particles from the sediments into the group-III compound semiconductor crystal on the seed substrate 11, the slower the adhesion rate of sediments at P1 located on the upstream side of the seed substrate 11, the less the particles mix into the group III compound semiconductor crystal. The in-plane distribution of the growth rate of the GaN crystal on the seed substrate 11 is a parameter that indicates the uniformity of the GaN crystal growth on the seed substrate 11. That is, the lower the value of the in-plane distribution of the growth rate, the more uniformly the GaN crystal grows on the seed substrate 11. From the results shown in Table 1, it was confirmed that compared to Comparative Example 1, the generation of the sediment on the upstream side of the seed substrate 11 was more suppressed, and the GaN crystal was more uniformly grown on the seed substrate 11 in Example 1.
Table 2 shows the evaluation results of Examples 1, 2, Reference Example 1, and Comparative Example 1. From the results shown in Table 2, it was found that, compared to the result of Comparative Example 1, excellent results were acquired in all of Examples 1, 2, as well as Reference Example 1 for both of the adhesion rate of sediments at P1 on the inner wall surface of the flow channel 10 located on the upstream side of the seed substrate 11 and the in-plane distribution of the growth rate of GaN on the seed substrate 11. It was confirmed that, in Example 1, the generation of the sediments on the upstream side of the seed substrate 11 was suppressed and the GaN crystal was more uniformly grown on the seed substrate 11.
Table 3 shows the evaluation results for Example 1 and Example 3. From the results shown in Table 3, it was found that the adhesion rate of sediments at P1 of the inner wall surface of the flow channel 10 became lower as the position (T) of the second opening 10B1 became lower. It was confirmed that, when the position (T) of the second opening 10B1 was −15 mm, the adhesion rate of sediments at P2 on the inner wall surface of the flow channel 10 was remarkably higher than that of Example 1, while the growth rate of the GaN crystal on the seed substrate 11 was slightly slowed down, and the in-plane distribution of the growth rate was slightly higher.
The present disclosure is not limited to the above embodiment, various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present disclosure.
According to the manufacturing apparatus for a group-III compound semiconductor crystal of the present disclosure, generation of sediments on the inner wall surface of the apparatus on the upstream side of the seed substrate can be suppressed, and mixing of particles into the group-III compound semiconductor crystal growing on the seed substrate can be suppressed. The production yield of a group-III compound semiconductor crystal can thereby be improved.
A group-III compound semiconductor crystal obtained by the manufacturing apparatus for a group-III compound semiconductor crystal according to the present disclosure can be used in, for example, optical devices such as light emitting diodes or laser diodes, electronic devices such as rectifiers or bipolar transistors, or semiconductor sensors such as temperature sensors, pressure sensors, radiation sensors, or visible-ultraviolet detectors. The present disclosure is not limited to being used in the above, and is applicable to a wide range of fields.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2021-102689 | Jun 2021 | JP | national |
