Jurgen Faul

Person

Radebeul, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Process for forming semiconductor layers of different thickness in...
- Patent number 10,141,229
- Issue date Nov 27, 2018
- GLOBALFOUNDRIES Inc.
- Jürgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a semiconductor substrate comprising a...
- Patent number 7,679,120
- Issue date Mar 16, 2010
- Qimonda, AG
- Jurgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor structure
- Patent number 7,259,060
- Issue date Aug 21, 2007
- Infineon Technologies AG
- Jürgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of a semiconductor substrate comprising a...
- Patent number 7,118,955
- Issue date Oct 10, 2006
- Infineon Technologies AG
- Jurgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a doped semiconductor substrate
- Patent number 7,078,325
- Issue date Jul 18, 2006
- Infineon Technologies AG
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor structure
- Patent number 6,967,133
- Issue date Nov 22, 2005
- Infineon Technologies AG
- Jürgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a p-channel field-effect transistor on a sem...
- Patent number 6,943,116
- Issue date Sep 13, 2005
- Infineon Technologies AG
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with an insulation collar and method for producing...
- Patent number 6,828,191
- Issue date Dec 7, 2004
- Siemens Aktiengesellschaft
- Kai Wurster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory with trench capacitor and selection transistor and method fo...
- Patent number 6,664,167
- Issue date Dec 16, 2003
- Infineon Technologies AG
- Dietmar Temmler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with insulation collar and method for producing th...
- Patent number 6,509,599
- Issue date Jan 21, 2003
- Siemens Aktiengesellschaft
- Kai Wurster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating epitaxy layer
- Patent number 6,326,262
- Issue date Dec 4, 2001
- Infineon Technologies AG
- Dietmar Temmler
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Lateral Transistor with Self-Aligned Body Implant
- Publication number 20240234149
- Publication date Jul 11, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Achim Gratz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Transistor with Self-Aligned Body Implant
- Publication number 20240136189
- Publication date Apr 25, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Achim Gratz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20240097037
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Jürgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING SEMICONDUCTOR LAYERS OF DIFFERENT THICKNESS IN...
- Publication number 20180090386
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Jürgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Comprising a Field Effect Transistor and Method...
- Publication number 20090121286
- Publication date May 14, 2009
- QIMONDA AG
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing an integrated circuit
- Publication number 20090098701
- Publication date Apr 16, 2009
- Jurgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for the production of a semiconductor substrate comprising a...
- Publication number 20070205437
- Publication date Sep 6, 2007
- Jurgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A P-CHANNEL FIELD-EFFECT TRANSISTOR ON A SEM...
- Publication number 20050148178
- Publication date Jul 7, 2005
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for the production of a semiconductor substrate comprising a...
- Publication number 20050130370
- Publication date Jun 16, 2005
- Jurgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor structure
- Publication number 20050124124
- Publication date Jun 9, 2005
- Infineon Technologies AG
- Jurgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor structure
- Publication number 20040115874
- Publication date Jun 17, 2004
- Jurgen Amon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory with trench capacitor and selection transistor and method fo...
- Publication number 20020137278
- Publication date Sep 26, 2002
- Dietmar Temmler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing a doped semiconductor substrate
- Publication number 20020016049
- Publication date Feb 7, 2002
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS

Jurgen Faul

Person

Patents Grantslast 30 patents

Process for forming semiconductor layers of different thickness in...

Method for the production of a semiconductor substrate comprising a...

Method for fabricating a semiconductor structure

Method for the production of a semiconductor substrate comprising a...

Process for producing a doped semiconductor substrate

Method for fabricating a semiconductor structure

Method for fabricating a p-channel field-effect transistor on a sem...

Trench capacitor with an insulation collar and method for producing...

Memory with trench capacitor and selection transistor and method fo...

Trench capacitor with insulation collar and method for producing th...

Method for fabricating epitaxy layer

Patents Applicationslast 30 patents

Lateral Transistor with Self-Aligned Body Implant

Lateral Transistor with Self-Aligned Body Implant

TRANSISTOR DEVICE

PROCESS FOR FORMING SEMICONDUCTOR LAYERS OF DIFFERENT THICKNESS IN...

Integrated Circuit Comprising a Field Effect Transistor and Method...

Method of manufacturing an integrated circuit

Method for the production of a semiconductor substrate comprising a...

METHOD FOR FABRICATING A P-CHANNEL FIELD-EFFECT TRANSISTOR ON A SEM...

Method for the production of a semiconductor substrate comprising a...

Method for fabricating a semiconductor structure

Method for fabricating a semiconductor structure

Memory with trench capacitor and selection transistor and method fo...

Process for producing a doped semiconductor substrate