Jusuke Ogura

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Avoiding field oxide gouging in shallow trench isolation (STI) regions
- Patent number 7,265,014
- Issue date Sep 4, 2007
- Spansion LLC
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monos device having buried metal silicide bit line
- Patent number 6,828,199
- Issue date Dec 7, 2004
- Advanced Micro Devices, Ltd.
- Jusuke Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Innovative method of hard mask removal
- Patent number 6,809,033
- Issue date Oct 26, 2004
- Fasl, LLC
- Angela Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual bit memory device with isolated polysilicon floating gates
- Patent number 6,713,809
- Issue date Mar 30, 2004
- Advanced Micro Devices, Inc.
- Jusuke Ogura
- G11 - INFORMATION STORAGE
Information Patent Grant
RELACS shrink method applied for single print resist mask for LDD o...
- Patent number 6,642,148
- Issue date Nov 4, 2003
- Advanced Micro Devices, Inc.
- Kouros Ghandehari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory wordline hard mask
- Patent number 6,617,215
- Issue date Sep 9, 2003
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making a dual bit memory device with isolated polysilic...
- Patent number 6,573,140
- Issue date Jun 3, 2003
- Advanced Micro Devices, Inc.
- Jusuke Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming narrow insulating spacers for use in reducing min...
- Patent number 6,537,866
- Issue date Mar 25, 2003
- Advanced Micro Devices, Inc.
- Jeffrey A. Shields
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high quality multiple thickness oxide using high...
- Patent number 6,479,411
- Issue date Nov 12, 2002
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high quality multiple thickness oxide layers by...
- Patent number 6,461,973
- Issue date Oct 8, 2002
- Advanced Micro Devices, Inc.
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming high quality multiple thickness oxide layers by...
- Patent number 6,432,618
- Issue date Aug 13, 2002
- Advanced Micro Devices, Inc.
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Avoiding Field Oxide Gouging In Shallow Trench Isolation (STI) Regions
- Publication number 20070262412
- Publication date Nov 15, 2007
- SPANSION LLC
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monos device having buried metal silicide bit line
- Publication number 20030119314
- Publication date Jun 26, 2003
- Jusuke Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming high quality multiple thickness oxide layers by...
- Publication number 20020058421
- Publication date May 16, 2002
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS

Jusuke Ogura

Person

Patents Grantslast 30 patents

Avoiding field oxide gouging in shallow trench isolation (STI) regions

Monos device having buried metal silicide bit line

Innovative method of hard mask removal

Dual bit memory device with isolated polysilicon floating gates

RELACS shrink method applied for single print resist mask for LDD o...

Memory wordline hard mask

Process for making a dual bit memory device with isolated polysilic...

Method of forming narrow insulating spacers for use in reducing min...

Method for forming high quality multiple thickness oxide using high...

Method for forming high quality multiple thickness oxide layers by...

Method for forming high quality multiple thickness oxide layers by...

Patents Applicationslast 30 patents

Avoiding Field Oxide Gouging In Shallow Trench Isolation (STI) Regions

Monos device having buried metal silicide bit line

Method for forming high quality multiple thickness oxide layers by...