Jyh-Ming Hung

Person

Changhua City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 12,363,969
- Issue date Jul 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
Information Patent Grant
Germanium-containing photodetector and methods of forming the same
- Patent number 12,051,763
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,908,900
- Issue date Feb 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-containing photodetector and methods of forming the same
- Patent number 11,837,613
- Issue date Dec 5, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layer for epitaxial semiconductor process
- Patent number 11,508,817
- Issue date Nov 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sensor structure for optical performance enhancement
- Patent number 8,816,457
- Issue date Aug 26, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyh-Ming Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal for a backside package of backside illuminated image sensor
- Patent number 8,293,122
- Issue date Oct 23, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodiode with multi-epi films for image sensor
- Patent number 8,164,124
- Issue date Apr 24, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of implantation
- Patent number 7,968,424
- Issue date Jun 28, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeng-Shyan Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME
- Publication number 20240355953
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20240136401
- Publication date Apr 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME
- Publication number 20230369360
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20220367638
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME
- Publication number 20210375959
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Company Limited
- Jyh-Ming HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS
- Publication number 20210376086
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Yin-Kai Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL FOR A BACKSIDE PACKAGE OF BACKSIDE ILLUMINATED IMAGE SENSOR
- Publication number 20100181283
- Publication date Jul 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Chieh Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF IMPLANTATION
- Publication number 20100184242
- Publication date Jul 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeng-Shyan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR IMAGE SENSOR DEVICE
- Publication number 20080303932
- Publication date Dec 11, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-De Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODIODE WITH MULTI-EPI FILMS FOR IMAGE SENSOR
- Publication number 20080246063
- Publication date Oct 9, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Cheng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and Method To Reduce Cross-Talk and Blooming For Image Sensors
- Publication number 20080217659
- Publication date Sep 11, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jyh-Ming Hung
- H01 - BASIC ELECTRIC ELEMENTS

Jyh-Ming Hung

Person

Patents Grantslast 30 patents

Passivation layer for epitaxial semiconductor process

Germanium-containing photodetector and methods of forming the same

Passivation layer for epitaxial semiconductor process

Germanium-containing photodetector and methods of forming the same

Passivation layer for epitaxial semiconductor process

Sensor structure for optical performance enhancement

Dual metal for a backside package of backside illuminated image sensor

Photodiode with multi-epi films for image sensor

Method of implantation

Patents Applicationslast 30 patents

GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME

PASSIVATION LAYER FOR EPITAXIAL SEMICONDUCTOR PROCESS

DUAL METAL FOR A BACKSIDE PACKAGE OF BACKSIDE ILLUMINATED IMAGE SENSOR

METHOD OF IMPLANTATION

ISOLATION STRUCTURE FOR IMAGE SENSOR DEVICE

PHOTODIODE WITH MULTI-EPI FILMS FOR IMAGE SENSOR

Device and Method To Reduce Cross-Talk and Blooming For Image Sensors