Kai-Hung Yu

Person

Watervliet, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for using ultra thin ruthenium metal hard mask for etching p...
- Patent number 11,688,604
- Issue date Jun 27, 2023
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,621,190
- Issue date Apr 4, 2023
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end fully se...
- Patent number 11,594,451
- Issue date Feb 28, 2023
- Tokyo Electron Limited
- Robert Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Selective deposition of conductive cap for fully-aligned-via (FAV)
- Patent number 11,515,203
- Issue date Nov 29, 2022
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end fully se...
- Patent number 11,456,212
- Issue date Sep 27, 2022
- Tokyo Electron Limited
- Robert Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of bottom-up metallization in a recessed feature
- Patent number 11,450,562
- Issue date Sep 20, 2022
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,024,535
- Issue date Jun 1, 2021
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal hard mask layers for processing of microelectronic workpieces
- Patent number 10,950,444
- Issue date Mar 16, 2021
- Tokyo Electron Limited
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method of forming the same
- Patent number 10,923,392
- Issue date Feb 16, 2021
- Tokyo Electron Limited
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end fully se...
- Patent number 10,923,394
- Issue date Feb 16, 2021
- Tokyo Electron Limited
- Robert Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Platform and method of operating for integrated end-to-end fully se...
- Patent number 10,886,173
- Issue date Jan 5, 2021
- Tokyo Electron Limited
- Robert Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Platform and method of operating for integrated end-to-end CMP-less...
- Patent number 10,861,744
- Issue date Dec 8, 2020
- Tokyo Electron Limited
- Ying Trickett
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional device and method of forming the same
- Patent number 10,770,479
- Issue date Sep 8, 2020
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 10,700,009
- Issue date Jun 30, 2020
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of integrated circuit fabrication with dual metal power rail
- Patent number 10,580,691
- Issue date Mar 3, 2020
- Tokyo Electron Limited
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure and method of forming the same
- Patent number 10,541,174
- Issue date Jan 21, 2020
- Tokyo Electron Limited
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal method and processing method
- Patent number 10,460,988
- Issue date Oct 29, 2019
- Tokyo Electron Limited
- Takeshi Itatani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition with surface treatment
- Patent number 10,378,105
- Issue date Aug 13, 2019
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integration of a self-forming barrier layer and a ruthenium metal l...
- Patent number 10,157,784
- Issue date Dec 18, 2018
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 10,056,328
- Issue date Aug 21, 2018
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective bottom-up metal feature filling for interconnects
- Patent number 10,014,213
- Issue date Jul 3, 2018
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ruthenium metal feature fill for interconnects
- Patent number 9,711,449
- Issue date Jul 18, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of ALD barrier layer and CVD Ru liner for void-free Cu...
- Patent number 9,607,888
- Issue date Mar 28, 2017
- Tokyo Electron Limited
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Copper wiring forming method, film forming system, and storage medium
- Patent number 9,425,093
- Issue date Aug 23, 2016
- Tokyo Electron Limited
- Tadahiro Ishizaka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES THAT INCLUDE METAL CAP LAYERS
- Publication number 20240363410
- Publication date Oct 31, 2024
- TOKYO ELECTRON LIMITED
- Ryota Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SELF-ALIGNED DIELECTRIC WALL FORMATION FOR FORKSHEET APPL...
- Publication number 20240304500
- Publication date Sep 12, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CATALYST-ENHANCED CHEMICAL VAPOR DEPOSITION
- Publication number 20240213093
- Publication date Jun 27, 2024
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Conductive Material Deposition
- Publication number 20240178003
- Publication date May 30, 2024
- TOKYO ELECTRON LIMITED
- Hirokazu Aizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL ETCHING OF RUTHENIUM
- Publication number 20240153781
- Publication date May 9, 2024
- TOKYO ELECTRON LIMITED
- Hisashi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing a Substrate
- Publication number 20240087891
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE PRECLEANING PRIOR TO METAL FILLING
- Publication number 20230411142
- Publication date Dec 21, 2023
- TOKYO ELECTRON LIMITED
- Ryota Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable Hardness Amorphous Carbon Mask
- Publication number 20230343592
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Improving Etch Rate And Critical Dimension Uniformity Wh...
- Publication number 20230343598
- Publication date Oct 26, 2023
- TOKYO ELECTRON LIMITED
- Shihsheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION
- Publication number 20230274932
- Publication date Aug 31, 2023
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL GATE CAPPING LAYER FOR GATE PROTECTION
- Publication number 20220359718
- Publication date Nov 10, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Line Roughness Reduction and Self-Aligned Multi-Patternin...
- Publication number 20220319838
- Publication date Oct 6, 2022
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220301930
- Publication date Sep 22, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220139776
- Publication date May 5, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20210287936
- Publication date Sep 16, 2021
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DEPOSITION OF CONDUCTIVE CAP FOR FULLY-ALIGNED-VIA (FAV)
- Publication number 20210242074
- Publication date Aug 5, 2021
- TOKYO ELECTRON LIMITED
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...
- Publication number 20210125863
- Publication date Apr 29, 2021
- TOKYO ELECTRON LIMITED
- Robert CLARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...
- Publication number 20210118730
- Publication date Apr 22, 2021
- TOKYO ELECTRON LIMITED
- Robert CLARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF BOTTOM-UP METALLIZATION IN A RECESSED FEATURE
- Publication number 20210082750
- Publication date Mar 18, 2021
- TOKYO ELECTRON LIMITED
- Kai-Hung YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR USING ULTRA THIN RUTHENIUM METAL HARD MASK FOR ETCHING P...
- Publication number 20210028017
- Publication date Jan 28, 2021
- TOKYO ELECTRON LIMITED
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20200118871
- Publication date Apr 16, 2020
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME
- Publication number 20200006129
- Publication date Jan 2, 2020
- TOKYO ELECTRON LIMITED
- Soo Doo CHAE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END CMP-LESS...
- Publication number 20190295887
- Publication date Sep 26, 2019
- TOKYO ELECTRON LIMITED
- Ying Trickett
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...
- Publication number 20190295890
- Publication date Sep 26, 2019
- TOKYO ELECTRON LIMITED
- Robert Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...
- Publication number 20190295891
- Publication date Sep 26, 2019
- TOKYO ELECTRON LIMITED
- Robert Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20190288004
- Publication date Sep 19, 2019
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROTECTING COBALT PLUGS
- Publication number 20190259650
- Publication date Aug 22, 2019
- TOKYO ELECTRON LIMITED
- Sang Cheol Han
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METAL HARD MASK LAYERS FOR PROCESSING OF MICROELECTRONIC WORKPIECES
- Publication number 20190237331
- Publication date Aug 1, 2019
- TOKYO ELECTRON LIMITED
- Yen-Tien Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL METHOD AND PROCESSING METHOD
- Publication number 20190198390
- Publication date Jun 27, 2019
- TOKYO ELECTRON LIMITED
- Takeshi ITATANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS
- Publication number 20190103363
- Publication date Apr 4, 2019
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Kai-Hung Yu

Person

Patents Grantslast 30 patents

Method for using ultra thin ruthenium metal hard mask for etching p...

Method for filling recessed features in semiconductor devices with...

Platform and method of operating for integrated end-to-end fully se...

Selective deposition of conductive cap for fully-aligned-via (FAV)

Platform and method of operating for integrated end-to-end fully se...

Method of bottom-up metallization in a recessed feature

Method for filling recessed features in semiconductor devices with...

Metal hard mask layers for processing of microelectronic workpieces

Interconnect structure and method of forming the same

Platform and method of operating for integrated end-to-end fully se...

Platform and method of operating for integrated end-to-end fully se...

Platform and method of operating for integrated end-to-end CMP-less...

Three-dimensional device and method of forming the same

Ruthenium metal feature fill for interconnects

Method of integrated circuit fabrication with dual metal power rail

Interconnect structure and method of forming the same

Removal method and processing method

Selective deposition with surface treatment

Integration of a self-forming barrier layer and a ruthenium metal l...

Ruthenium metal feature fill for interconnects

Selective bottom-up metal feature filling for interconnects

Ruthenium metal feature fill for interconnects

Integration of ALD barrier layer and CVD Ru liner for void-free Cu...

Copper wiring forming method, film forming system, and storage medium

Patents Applicationslast 30 patents

METHODS FOR MAKING SEMICONDUCTOR DEVICES THAT INCLUDE METAL CAP LAYERS

METHOD OF SELF-ALIGNED DIELECTRIC WALL FORMATION FOR FORKSHEET APPL...

CATALYST-ENHANCED CHEMICAL VAPOR DEPOSITION

Method of Conductive Material Deposition

THERMAL ETCHING OF RUTHENIUM

Method for Processing a Substrate

METAL OXIDE PRECLEANING PRIOR TO METAL FILLING

Variable Hardness Amorphous Carbon Mask

Method For Improving Etch Rate And Critical Dimension Uniformity Wh...

SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION

SACRIFICIAL GATE CAPPING LAYER FOR GATE PROTECTION

Method of Line Roughness Reduction and Self-Aligned Multi-Patternin...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

SELECTIVE DEPOSITION OF CONDUCTIVE CAP FOR FULLY-ALIGNED-VIA (FAV)

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...

METHOD OF BOTTOM-UP METALLIZATION IN A RECESSED FEATURE

METHOD FOR USING ULTRA THIN RUTHENIUM METAL HARD MASK FOR ETCHING P...

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END CMP-LESS...

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END FULLY SE...

THREE-DIMENSIONAL DEVICE AND METHOD OF FORMING THE SAME

METHOD FOR PROTECTING COBALT PLUGS

METAL HARD MASK LAYERS FOR PROCESSING OF MICROELECTRONIC WORKPIECES

REMOVAL METHOD AND PROCESSING METHOD

RUTHENIUM METAL FEATURE FILL FOR INTERCONNECTS