Kalyankumar Das

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Diamond hetero-junction rectifying element
- Patent number 5,442,199
- Issue date Aug 15, 1995
- Kobe Steel U.S.A., Inc.
- Kimitsugu Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond metal base/permeable base transistor and method of making same
- Patent number 5,371,378
- Issue date Dec 6, 1994
- Kobe Steel U.S.A., Inc.
- Kalyankumar Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphous silicon rectifying contact on diamond and method for maki...
- Patent number 5,371,382
- Issue date Dec 6, 1994
- Kobe Steel U.S.A., Inc.
- Vasudev Venkatesan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical diamond field effect transistor
- Patent number 5,294,814
- Issue date Mar 15, 1994
- Kobe Steel USA
- Kalyankumar Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond and silicon carbide heterojunction bipolar transistor
- Patent number 5,285,089
- Issue date Feb 8, 1994
- Kobe Steel U.S.A., Inc.
- Kalyankumar Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond rectifying contact with undoped diamond layer
- Patent number 5,278,431
- Issue date Jan 11, 1994
- Kobe Development Corporation
- Kalyankumar Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature rectifying contact
- Patent number 5,212,401
- Issue date May 18, 1993
- Kobe Steel USA, Inc.
- Trevor P. Humphreys
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature refractory silicide rectifying contact
- Patent number 5,155,559
- Issue date Oct 13, 1992
- North Carolina State University
- Trevor P. Humphreys
- H01 - BASIC ELECTRIC ELEMENTS

Kalyankumar Das

Person

Patents Grantslast 30 patents

Diamond hetero-junction rectifying element

Diamond metal base/permeable base transistor and method of making same

Amorphous silicon rectifying contact on diamond and method for maki...

Vertical diamond field effect transistor

Diamond and silicon carbide heterojunction bipolar transistor

Diamond rectifying contact with undoped diamond layer

High temperature rectifying contact

High temperature refractory silicide rectifying contact