Kambayashi Hiroshi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor transistor
- Patent number 9,875,899
- Issue date Jan 23, 2018
- Fuji Electric Co., Ltd.
- Hiroshi Kambayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating semiconductor device and the semiconductor d...
- Patent number 9,230,799
- Issue date Jan 5, 2016
- Tohoku University
- Akinobu Teramoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having semiconductor operating layer formed...
- Patent number 9,048,302
- Issue date Jun 2, 2015
- The Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of GaN-based semiconductor device and semicond...
- Patent number 8,999,788
- Issue date Apr 7, 2015
- TOHOKU UNIVERSITY
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor transistor
- Patent number 8,906,796
- Issue date Dec 9, 2014
- TOHOKU UNIVERSITY
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,525,225
- Issue date Sep 3, 2013
- The Furukawa Electric Co., Ltd.
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,350,293
- Issue date Jan 8, 2013
- Furukawa Electric Co., Ltd.
- Tat-Sing Paul Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based field effect transistor
- Patent number 8,330,187
- Issue date Dec 11, 2012
- Furukawa Electric Co., Ltd.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based field effect transistor and method of manufacturing the same
- Patent number 8,330,167
- Issue date Dec 11, 2012
- Furukawa Electric Co., Ltd.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor device and method of manufacturing the same
- Patent number 8,304,809
- Issue date Nov 6, 2012
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off field effect transistor using III-nitride semiconducto...
- Patent number 8,093,626
- Issue date Jan 10, 2012
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,072,002
- Issue date Dec 6, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing field effect transistor
- Patent number 7,998,848
- Issue date Aug 16, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor device using optical absorption...
- Patent number 7,855,155
- Issue date Dec 21, 2010
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
ED inverter circuit and integrate circuit element including the same
- Patent number 7,821,035
- Issue date Oct 26, 2010
- The Furukawa Electric Co., Ltd.
- Takehiko Nomura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
GaN based semiconductor element
- Patent number 7,812,371
- Issue date Oct 12, 2010
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, SCHOTTKY BA...
- Publication number 20150069410
- Publication date Mar 12, 2015
- FURUKAWA ELECTRIC CO., LTD.
- Kazuyuki UMENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR D...
- Publication number 20140367699
- Publication date Dec 18, 2014
- TOHOKU UNIVERSITY
- Akinobu TERAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICOND...
- Publication number 20130307063
- Publication date Nov 21, 2013
- TOHOKU UNIVERSITY
- Hiroshi KAMBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20130309828
- Publication date Nov 21, 2013
- TOHOKU UNIVERSITY
- Hiroshi KAMBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR D...
- Publication number 20130292700
- Publication date Nov 7, 2013
- TOHOKU UNIVERSITY
- Akinobu Teramoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based Semiconductor Element and Method of Manufacturing the Same
- Publication number 20130149828
- Publication date Jun 13, 2013
- FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED FIELD EFFECT TRANSISTOR
- Publication number 20130062616
- Publication date Mar 14, 2013
- FURUKAWA ELECTRIC CO., LTD.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR
- Publication number 20130052816
- Publication date Feb 28, 2013
- TOHOKU UNIVERISTY
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR TRANSISTOR
- Publication number 20130032819
- Publication date Feb 7, 2013
- TOHOKU UNIVERISTY
- Hiroshi Kambayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110049529
- Publication date Mar 3, 2011
- FURUKAWA ELECTRIC CO., LTD.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Normally-off field effect transistor using III-nitride semiconducto...
- Publication number 20100283083
- Publication date Nov 11, 2010
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Publication number 20100219455
- Publication date Sep 2, 2010
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100219451
- Publication date Sep 2, 2010
- Tat-Sing Paul Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED FIELD EFFECT TRANSISTOR
- Publication number 20100148184
- Publication date Jun 17, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100127275
- Publication date May 27, 2010
- FURUKAWA ELECTRIC CO., LTD.
- Nomura Takehiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20100117186
- Publication date May 13, 2010
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL CELL CULTURE CARRIER AND METHOD FOR CELL CULTURE...
- Publication number 20100041146
- Publication date Feb 18, 2010
- Nippon Sheet Glass Company, Limited
- Hiroshi Kambayashi
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
Process for producing semiconductor device
- Publication number 20090325339
- Publication date Dec 31, 2009
- Yuki Niiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN based semiconductor element
- Publication number 20090278172
- Publication date Nov 12, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ED INVERTER CIRCUIT AND INTEGRATE CIRCUIT ELEMENT INCLUDING THE SAME
- Publication number 20090250767
- Publication date Oct 8, 2009
- THE FURUKAWA ELECTRIC CO., LTD.
- Takehiko Nomura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method of producing field effect transistor
- Publication number 20090246924
- Publication date Oct 1, 2009
- Yuki NIIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090242938
- Publication date Oct 1, 2009
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transister and process for producing the same
- Publication number 20090194790
- Publication date Aug 6, 2009
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based semiconductor device and method of manufacturing the same
- Publication number 20090140295
- Publication date Jun 4, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Glass Composition and Glass Spacer Using the Same
- Publication number 20090105061
- Publication date Apr 23, 2009
- Nippon Sheet Glass Company, Limited
- Kosuke Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070051979
- Publication date Mar 8, 2007
- The Furukawa Electric Co, Ltd.
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS

Kambayashi Hiroshi

Person

Patents Grantslast 30 patents

Semiconductor transistor

Method for fabricating semiconductor device and the semiconductor d...

Field effect transistor having semiconductor operating layer formed...

Manufacturing method of GaN-based semiconductor device and semicond...

Method of producing semiconductor transistor

Semiconductor device

Field effect transistor and method of manufacturing the same

GaN-based field effect transistor

GaN-based field effect transistor and method of manufacturing the same

GaN-based semiconductor device and method of manufacturing the same

Normally-off field effect transistor using III-nitride semiconducto...

Field effect transistor

Method of producing field effect transistor

Process for producing semiconductor device using optical absorption...

ED inverter circuit and integrate circuit element including the same

GaN based semiconductor element

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, SCHOTTKY BA...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR D...

MANUFACTURING METHOD OF GaN-BASED SEMICONDUCTOR DEVICE AND SEMICOND...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR D...

GaN-based Semiconductor Element and Method of Manufacturing the Same

GaN-BASED FIELD EFFECT TRANSISTOR

METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR

SEMICONDUCTOR TRANSISTOR

GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME

Normally-off field effect transistor using III-nitride semiconducto...

III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

GAN-BASED FIELD EFFECT TRANSISTOR

GAN-BASED FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and method of producing the same

THREE-DIMENSIONAL CELL CULTURE CARRIER AND METHOD FOR CELL CULTURE...

Process for producing semiconductor device

GaN based semiconductor element

ED INVERTER CIRCUIT AND INTEGRATE CIRCUIT ELEMENT INCLUDING THE SAME

Method of producing field effect transistor

Field effect transistor

Field effect transister and process for producing the same

GaN-based semiconductor device and method of manufacturing the same

Glass Composition and Glass Spacer Using the Same

Semiconductor device