Kandabara N. Tapily

Person

Mechanicville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for threshold voltage tuning through selective deposition of...
- Patent number 12,020,990
- Issue date Jun 25, 2024
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Architecture design and process for manufacturing monolithically in...
- Patent number 11,901,360
- Issue date Feb 13, 2024
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for mitigating lateral film growth in area selective deposition
- Patent number 11,804,376
- Issue date Oct 31, 2023
- Tokyo Electron Limited
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing tool with integrated metrology and method of u...
- Patent number 11,769,677
- Issue date Sep 26, 2023
- Tokyo Electron Limited
- Kandabara Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fully self-aligned via with selective bilayer dielectric regrowth
- Patent number 11,705,369
- Issue date Jul 18, 2023
- Tokyo Electron Limited
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling the forming voltage in resistive random acce...
- Patent number 11,700,778
- Issue date Jul 11, 2023
- Tokyo Electron Limited
- Steven Consiglio
Information Patent Grant
Coaxial contacts for 3D logic and memory
- Patent number 11,676,968
- Issue date Jun 13, 2023
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective deposition for forming fully self-aligned vias
- Patent number 11,658,068
- Issue date May 23, 2023
- Tokyo Electron Limited
- Kandabara Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for reducing lateral film formation in area selective deposi...
- Patent number 11,658,066
- Issue date May 23, 2023
- Tokyo Electron Limited
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with air gaps for low capa...
- Patent number 11,646,227
- Issue date May 9, 2023
- Tokyo Electron Limited
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 11,621,190
- Issue date Apr 4, 2023
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power distribution network for 3D logic and memory
- Patent number 11,616,020
- Issue date Mar 28, 2023
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to vertically route a logic cell incorporating stacked trans...
- Patent number 11,616,053
- Issue date Mar 28, 2023
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end fully se...
- Patent number 11,594,451
- Issue date Feb 28, 2023
- Tokyo Electron Limited
- Robert Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Localized etch stop layer
- Patent number 11,532,517
- Issue date Dec 20, 2022
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end fully se...
- Patent number 11,456,212
- Issue date Sep 27, 2022
- Tokyo Electron Limited
- Robert Clark
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of selectively forming metal silicides for semiconductor dev...
- Patent number 11,443,949
- Issue date Sep 13, 2022
- Tokyo Electron Limited
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus having stacked gates and method of manufact...
- Patent number 11,444,082
- Issue date Sep 13, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming and using stress-tuned silicon oxide films in se...
- Patent number 11,443,953
- Issue date Sep 13, 2022
- Tokyo Electron Limited
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end self-ali...
- Patent number 11,398,379
- Issue date Jul 26, 2022
- Tokyo Electron Limited
- Robert Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual metal wrap-around contacts for semiconductor devices
- Patent number 11,374,101
- Issue date Jun 28, 2022
- Tokyo Electron Limited
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contacts for 3D logic and memory
- Patent number 11,335,599
- Issue date May 17, 2022
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse contact and silicide process for three-dimensional semicond...
- Patent number 11,322,401
- Issue date May 3, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platform and method of operating for integrated end-to-end area-sel...
- Patent number 11,302,588
- Issue date Apr 12, 2022
- Tokyo Electron Limited
- Robert Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for threshold voltage tuning through selective deposition of...
- Patent number 11,264,289
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate processing tool with integrated metrology and method of u...
- Patent number 11,264,254
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Kandabara Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reverse contact and silicide process for three-dimensional logic de...
- Patent number 11,264,274
- Issue date Mar 1, 2022
- Tokyo Electron Limited
- Jeffrey Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coaxial contacts for 3D logic and memory
- Patent number 11,251,200
- Issue date Feb 15, 2022
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with air gaps for low capa...
- Patent number 11,251,077
- Issue date Feb 15, 2022
- Tokyo Electron Limited
- Kandabara Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Architecture design of monolithically integrated 3D CMOS logic and...
- Patent number 11,217,583
- Issue date Jan 4, 2022
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR SEMICONDUCTOR PROCESSING
- Publication number 20250105002
- Publication date Mar 27, 2025
- TOKYO ELECTRON LIMITED
- Hunter Frost
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR AREA SELECTIVE DEPOSITION ON EXTREME ULTRA-VIOLET (EUV)...
- Publication number 20250093778
- Publication date Mar 20, 2025
- TOKYO ELECTRON LIMITED
- Lior Huli
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
METHODS FOR PROTECTING TO REUSE SILICON CARRIER WAFER BASED ON IR L...
- Publication number 20250079166
- Publication date Mar 6, 2025
- TOKYO ELECTRON LIMITED
- Panupong JAIPAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP
- Publication number 20250054809
- Publication date Feb 13, 2025
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2-DIMENSIONAL MATERIALS AS BARRIER LAYERS IN METALLIZATION OF SEMIC...
- Publication number 20240387371
- Publication date Nov 21, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Processing Using a Two-Dimensional Polymer
- Publication number 20240363333
- Publication date Oct 31, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Conductive Material Deposition
- Publication number 20240178003
- Publication date May 30, 2024
- TOKYO ELECTRON LIMITED
- Hirokazu Aizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL ETCHING OF RUTHENIUM
- Publication number 20240153781
- Publication date May 9, 2024
- TOKYO ELECTRON LIMITED
- Hisashi Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A FERROELECTRIC DEVICE
- Publication number 20240128308
- Publication date Apr 18, 2024
- TOKYO ELECTRON LIMITED
- Dina Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MOISTURE BARRIER ON PHOTOSENSITIVE ORGANOMETALL...
- Publication number 20240085793
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEXT GENERATION BONDING LAYER FOR 3D HETEROGENEOUS INTEGRATION
- Publication number 20240071984
- Publication date Feb 29, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SELECTIVE DEPOSITION OF LINER AND BARRIER FILMS FOR RESISTANCE REDU...
- Publication number 20240047342
- Publication date Feb 8, 2024
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING PHOTOSENSITIVE ORGANOMETALLIC OXIDES BY CHEMICAL...
- Publication number 20240045332
- Publication date Feb 8, 2024
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP-DOWN SELF-ALIGNMENT OF VIAS IN A SEMICONDUCTOR DEVICE FOR SUB-2...
- Publication number 20230352343
- Publication date Nov 2, 2023
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPA...
- Publication number 20230290677
- Publication date Sep 14, 2023
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION
- Publication number 20230274932
- Publication date Aug 31, 2023
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER BONDING METHOD USING SELECTIVE DEPOSITION AND SURFACE TREATMENT
- Publication number 20230075263
- Publication date Mar 9, 2023
- TOKYO ELECTRON LIMITED
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METHOD FOR VERTICAL RECESS FOR 3D DEVICE INTEGRATION
- Publication number 20230036597
- Publication date Feb 2, 2023
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING STACKED GATES AND METHOD OF MANUFACT...
- Publication number 20220416048
- Publication date Dec 29, 2022
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dry Resist System and Method of Using
- Publication number 20220404713
- Publication date Dec 22, 2022
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20220310812
- Publication date Sep 29, 2022
- TOKYO ELECTRON LIMITED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE FILMS FOR SEMICONDUCTOR D...
- Publication number 20220310385
- Publication date Sep 29, 2022
- TOKYO ELECTRON LIMITED
- Kandabara N. Tapily
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BILAYER DIELECTRIC STACK FOR A FERROELECTRIC TUNNEL JUNCTION AND ME...
- Publication number 20220223608
- Publication date Jul 14, 2022
- TOKYO ELECTRON LIMITED
- Steven Consiglio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE PROCESSING TOOL WITH INTEGRATED METROLOGY AND METHOD OF U...
- Publication number 20220181176
- Publication date Jun 9, 2022
- TOKYO ELECTRON LIMITED
- Robert CLARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR THRESHOLD VOLTAGE TUNING THROUGH SELECTIVE DEPOSITION OF...
- Publication number 20220148924
- Publication date May 12, 2022
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPA...
- Publication number 20220130723
- Publication date Apr 28, 2022
- TOKYO ELECTRON LIMITED
- Kandabara Tapily
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COAXIAL CONTACTS FOR 3D LOGIC AND MEMORY
- Publication number 20220130864
- Publication date Apr 28, 2022
- TOKYO ELECTRON LIMITED
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARCHITECTURE DESIGN AND PROCESSES FOR MANUFACTURING MONOLITHICALLY...
- Publication number 20220085012
- Publication date Mar 17, 2022
- TOKYO ELECTRON LIMITED
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF LOW-TEMPERATURE AND HIGH-TEMPERATURE IN-SITU DOPED SOU...
- Publication number 20220051905
- Publication date Feb 17, 2022
- TOKYO ELECTRON LIMITED
- Jeffrey SMITH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING DIELECTRIC MATERIALS WITH SELECTED POLARIZATION...
- Publication number 20220044922
- Publication date Feb 10, 2022
- TOKYO ELECTRON LIMITED
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS

Kandabara N. Tapily

Person

Patents Grantslast 30 patents

Method for threshold voltage tuning through selective deposition of...

Architecture design and process for manufacturing monolithically in...

Method for mitigating lateral film growth in area selective deposition

Substrate processing tool with integrated metrology and method of u...

Fully self-aligned via with selective bilayer dielectric regrowth

Method for controlling the forming voltage in resistive random acce...

Coaxial contacts for 3D logic and memory

Method of selective deposition for forming fully self-aligned vias

Method for reducing lateral film formation in area selective deposi...

Method of forming a semiconductor device with air gaps for low capa...

Method for filling recessed features in semiconductor devices with...

Power distribution network for 3D logic and memory

Method to vertically route a logic cell incorporating stacked trans...

Platform and method of operating for integrated end-to-end fully se...

Localized etch stop layer

Platform and method of operating for integrated end-to-end fully se...

Method of selectively forming metal silicides for semiconductor dev...

Semiconductor apparatus having stacked gates and method of manufact...

Method for forming and using stress-tuned silicon oxide films in se...

Platform and method of operating for integrated end-to-end self-ali...

Dual metal wrap-around contacts for semiconductor devices

Self-aligned contacts for 3D logic and memory

Reverse contact and silicide process for three-dimensional semicond...

Platform and method of operating for integrated end-to-end area-sel...

Method for threshold voltage tuning through selective deposition of...

Substrate processing tool with integrated metrology and method of u...

Reverse contact and silicide process for three-dimensional logic de...

Coaxial contacts for 3D logic and memory

Method of forming a semiconductor device with air gaps for low capa...

Architecture design of monolithically integrated 3D CMOS logic and...

Patents Applicationslast 30 patents

METHOD FOR SEMICONDUCTOR PROCESSING

METHOD FOR AREA SELECTIVE DEPOSITION ON EXTREME ULTRA-VIOLET (EUV)...

METHODS FOR PROTECTING TO REUSE SILICON CARRIER WAFER BASED ON IR L...

FULLY SELF-ALIGNED VIA WITH GRAPHENE CAP

2-DIMENSIONAL MATERIALS AS BARRIER LAYERS IN METALLIZATION OF SEMIC...

Semiconductor Processing Using a Two-Dimensional Polymer

Method of Conductive Material Deposition

THERMAL ETCHING OF RUTHENIUM

METHOD FOR FABRICATING A FERROELECTRIC DEVICE

METHOD OF FORMING A MOISTURE BARRIER ON PHOTOSENSITIVE ORGANOMETALL...

NEXT GENERATION BONDING LAYER FOR 3D HETEROGENEOUS INTEGRATION

SELECTIVE DEPOSITION OF LINER AND BARRIER FILMS FOR RESISTANCE REDU...

METHOD OF FORMING PHOTOSENSITIVE ORGANOMETALLIC OXIDES BY CHEMICAL...

TOP-DOWN SELF-ALIGNMENT OF VIAS IN A SEMICONDUCTOR DEVICE FOR SUB-2...

METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPA...

SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION

WAFER BONDING METHOD USING SELECTIVE DEPOSITION AND SURFACE TREATMENT

SELF-ALIGNED METHOD FOR VERTICAL RECESS FOR 3D DEVICE INTEGRATION

SEMICONDUCTOR STRUCTURE HAVING STACKED GATES AND METHOD OF MANUFACT...

Dry Resist System and Method of Using

DUAL METAL WRAP-AROUND CONTACTS FOR SEMICONDUCTOR DEVICES

ATOMIC LAYER DEPOSITION OF ALUMINUM OXIDE FILMS FOR SEMICONDUCTOR D...

BILAYER DIELECTRIC STACK FOR A FERROELECTRIC TUNNEL JUNCTION AND ME...

SUBSTRATE PROCESSING TOOL WITH INTEGRATED METROLOGY AND METHOD OF U...

METHOD FOR THRESHOLD VOLTAGE TUNING THROUGH SELECTIVE DEPOSITION OF...

METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH AIR GAPS FOR LOW CAPA...

COAXIAL CONTACTS FOR 3D LOGIC AND MEMORY

ARCHITECTURE DESIGN AND PROCESSES FOR MANUFACTURING MONOLITHICALLY...

FORMATION OF LOW-TEMPERATURE AND HIGH-TEMPERATURE IN-SITU DOPED SOU...

METHODS FOR FORMING DIELECTRIC MATERIALS WITH SELECTED POLARIZATION...