Kang-ill Seo

Person

Loudonville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,935,922
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including transistor stacks having diffe...
- Patent number 11,923,365
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin vertical field effect transistor and single-fin vertical...
- Patent number 11,901,240
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance measuring structures of stacked devices
- Patent number 11,901,363
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon buried power rail implemented backside power distri...
- Patent number 11,881,455
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including stacked nanosheet transistors
- Patent number 11,843,001
- Issue date Dec 12, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 11,764,207
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional integrated semiconductor architecture having alig...
- Patent number 11,694,968
- Issue date Jul 4, 2023
- Samsung Electronics Co., Ltd.
- Seok Won Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different diffusion break structures for three-dimensional stacked...
- Patent number 11,688,742
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including an element having a non-linear...
- Patent number 11,581,423
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Kang Ill Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,502,167
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an integrated circuit with buried power rail
- Patent number 11,233,008
- Issue date Jan 25, 2022
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low current leakage finFET and methods of making the same
- Patent number 10,930,768
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively increasing silicon fin area for vertical fie...
- Patent number 10,644,031
- Issue date May 5, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for selectively increasing silicon fin area for vertical fie...
- Patent number 10,497,719
- Issue date Dec 3, 2019
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a Field Effect Transistor, including forming a r...
- Patent number 9,257,327
- Issue date Feb 9, 2016
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating non-planar transistors including current enh...
- Patent number 8,927,373
- Issue date Jan 6, 2015
- Samsung Electronics Co, Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CELL ARCHITECTURE WITH CENTER-LINE POWER RAILS FOR STACKED FIELD-EF...
- Publication number 20240145343
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE MEASURING STRUCTURES OF STACKED DEVICES
- Publication number 20240145479
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-FIN VERTICAL FIELD EFFECT TRANSISTOR AND SINGLE-FIN VERTICAL...
- Publication number 20240145313
- Publication date May 2, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk YIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTO...
- Publication number 20240136354
- Publication date Apr 25, 2024
- Samsung Electronics Co., Ltd.
- KEUMSEOK PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-A...
- Publication number 20240105615
- Publication date Mar 28, 2024
- Samsung Electronics Co., Ltd.
- Jongjin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240096984
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...
- Publication number 20240096889
- Publication date Mar 21, 2024
- Samsung Electronics Co., Ltd.
- Seung Min Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240079329
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- EUN SUNG KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240079330
- Publication date Mar 7, 2024
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
- Publication number 20240072060
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHOD...
- Publication number 20240072048
- Publication date Feb 29, 2024
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240063122
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRI...
- Publication number 20240063123
- Publication date Feb 22, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE
- Publication number 20240023326
- Publication date Jan 18, 2024
- Samsung Electronics Co., Ltd.
- Byounghak HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS
- Publication number 20230420459
- Publication date Dec 28, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE HAVING DIFFERENT DIMENSIONS FOR CONNECTED CI...
- Publication number 20230402375
- Publication date Dec 14, 2023
- Samsung Electronics Co., Ltd.
- Eun Sung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STACKS HAVING SPACERS, AND RELATED FABRICATION METHODS
- Publication number 20230395659
- Publication date Dec 7, 2023
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20230378164
- Publication date Nov 23, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING METAL STRUCTURES HAVING A CURV...
- Publication number 20230369111
- Publication date Nov 16, 2023
- Samsung Electronics Co., Ltd.
- Jaemyung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS AND P-N JUNCTION DIODES INCLUDING STAC...
- Publication number 20230361112
- Publication date Nov 9, 2023
- Samsung Electronics Co. Ltd.
- BYOUNGHAK HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET RECESS FOR RU SUBTRACTIVE PROCESS
- Publication number 20230361032
- Publication date Nov 9, 2023
- Samsung Electronics Co., Ltd.
- Wonhyuk HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING VIA STRUCTURES HAVING A NARROW...
- Publication number 20230352400
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Tae Sun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING METAL LINES SPACED APART FROM...
- Publication number 20230352405
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Janggeun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONNECTION SCHEME WITH BACKSIDE POWER DISTRIBUTION NETWORK
- Publication number 20230352407
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL AND GATE D...
- Publication number 20230352528
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING T...
- Publication number 20230352399
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- Jaemyung CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHOD...
- Publication number 20230352408
- Publication date Nov 2, 2023
- Samsung Electronics Co., Ltd.
- MYUNGHOON JUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACER...
- Publication number 20230343823
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Jaejik BAEK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE INCLUDING METAL PATT...
- Publication number 20230343698
- Publication date Oct 26, 2023
- SAMSUNG ELECTRONICS CO,. LTD.
- Jaemyung CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FORMED OF...
- Publication number 20230343824
- Publication date Oct 26, 2023
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS

Kang-ill Seo

Person

Patents Grantslast 30 patents

Semiconductor device having stepped multi-stack transistor structure

Integrated circuit devices including transistor stacks having diffe...

Multi-fin vertical field effect transistor and single-fin vertical...

Resistance measuring structures of stacked devices

Through silicon buried power rail implemented backside power distri...

Devices including stacked nanosheet transistors

Diode structures of stacked devices and methods of forming the same

Three dimensional integrated semiconductor architecture having alig...

Different diffusion break structures for three-dimensional stacked...

Integrated circuit devices including an element having a non-linear...

Semiconductor device having stepped multi-stack transistor structure

Method of manufacturing an integrated circuit with buried power rail

Low current leakage finFET and methods of making the same

Method for selectively increasing silicon fin area for vertical fie...

Method for selectively increasing silicon fin area for vertical fie...

Methods of forming a Field Effect Transistor, including forming a r...

Methods of fabricating non-planar transistors including current enh...

Patents Applicationslast 30 patents

CELL ARCHITECTURE WITH CENTER-LINE POWER RAILS FOR STACKED FIELD-EF...

RESISTANCE MEASURING STRUCTURES OF STACKED DEVICES

MULTI-FIN VERTICAL FIELD EFFECT TRANSISTOR AND SINGLE-FIN VERTICAL...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD EFFECT TRANSISTO...

FIELD-EFFECT TRANSISTOR WITH UNIFORM SOURCE/DRAIN REGIONS ON SELF-A...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHOD...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...

THROUGH SILICON BURIED POWER RAIL IMPLEMENTED BACKSIDE POWER DISTRI...

MULTI-STACK NANOSHEET STRUCTURE INCLUDING SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICES INCLUDING METALLIC SOURCE/DRAIN REGIONS

INTERCONNECT STRUCTURE HAVING DIFFERENT DIMENSIONS FOR CONNECTED CI...

TRANSISTOR STACKS HAVING SPACERS, AND RELATED FABRICATION METHODS

DIODE STRUCTURES OF STACKED DEVICES AND METHODS OF FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING METAL STRUCTURES HAVING A CURV...

BIPOLAR JUNCTION TRANSISTORS AND P-N JUNCTION DIODES INCLUDING STAC...

WET RECESS FOR RU SUBTRACTIVE PROCESS

INTEGRATED CIRCUIT DEVICES INCLUDING VIA STRUCTURES HAVING A NARROW...

INTEGRATED CIRCUIT DEVICES INCLUDING METAL LINES SPACED APART FROM...

CONNECTION SCHEME WITH BACKSIDE POWER DISTRIBUTION NETWORK

3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL AND GATE D...

INTEGRATED CIRCUIT DEVICES INCLUDING A VIA AND METHODS OF FORMING T...

INTEGRATED CIRCUIT DEVICES INCLUDING BACKSIDE POWER RAIL AND METHOD...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN INNER SPACER...

INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE INCLUDING METAL PATT...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING GATE STRUCTURE FORMED OF...