Kang-ill Seo

Person

Loudonville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
3D stacked chip that shares power rails
- Patent number 12,272,647
- Issue date Apr 8, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance measuring structures of stacked devices
- Patent number 12,274,092
- Issue date Apr 8, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including transistor stacks having diffe...
- Patent number 12,262,560
- Issue date Mar 25, 2025
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
Information Patent Grant
Semiconductor device including backside contact structure having po...
- Patent number 12,255,248
- Issue date Mar 18, 2025
- Samsung Electronics Co., Ltd.
- Wonhyuk Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor structures of integrated circuit devices including stacked...
- Patent number 12,249,603
- Issue date Mar 11, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with buried power rail and methods of manufactur...
- Patent number 12,230,570
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including a power rail and methods of fo...
- Patent number 12,230,571
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Gilhwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Size-controllable multi-stack semiconductor device and method of ma...
- Patent number 12,224,314
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Gunho Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate contact structure formed from g...
- Patent number 12,211,837
- Issue date Jan 28, 2025
- Samsung Electronics Co., Ltd.
- Myunghoon Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including a power distribution network a...
- Patent number 12,200,920
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Inchan Hwang
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective single diffusion/electrical barrier
- Patent number 12,199,152
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-stack semiconductor device with zebra nanosheet structure
- Patent number 12,183,786
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including stacked nanosheet transistors
- Patent number 12,170,322
- Issue date Dec 17, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon buried power rail implemented backside power distri...
- Patent number 12,125,788
- Issue date Oct 22, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 12,094,869
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including discharging path and methods o...
- Patent number 12,087,669
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a three dimensional integrated semiconducto...
- Patent number 12,068,256
- Issue date Aug 20, 2024
- Samsung Electronics Co., Ltd.
- Seok Won Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,935,922
- Issue date Mar 19, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including transistor stacks having diffe...
- Patent number 11,923,365
- Issue date Mar 5, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin vertical field effect transistor and single-fin vertical...
- Patent number 11,901,240
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance measuring structures of stacked devices
- Patent number 11,901,363
- Issue date Feb 13, 2024
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through silicon buried power rail implemented backside power distri...
- Patent number 11,881,455
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Saehan Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices including stacked nanosheet transistors
- Patent number 11,843,001
- Issue date Dec 12, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode structures of stacked devices and methods of forming the same
- Patent number 11,764,207
- Issue date Sep 19, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional integrated semiconductor architecture having alig...
- Patent number 11,694,968
- Issue date Jul 4, 2023
- Samsung Electronics Co., Ltd.
- Seok Won Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Different diffusion break structures for three-dimensional stacked...
- Patent number 11,688,742
- Issue date Jun 27, 2023
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit devices including an element having a non-linear...
- Patent number 11,581,423
- Issue date Feb 14, 2023
- Samsung Electronics Co., Ltd.
- Kang Ill Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having stepped multi-stack transistor structure
- Patent number 11,502,167
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an integrated circuit with buried power rail
- Patent number 11,233,008
- Issue date Jan 25, 2022
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low current leakage finFET and methods of making the same
- Patent number 10,930,768
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM...
- Publication number 20250120127
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Myung Yang
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING METAL LINES HAVING DIFFERENT METAL P...
- Publication number 20250118676
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Jintae Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM G...
- Publication number 20250120183
- Publication date Apr 10, 2025
- Samsung Electronics Co., Ltd.
- Myunghoon JUNG
Information Patent Application
MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE
- Publication number 20250107172
- Publication date Mar 27, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING LOWER INTERCONNECT METAL LAYER...
- Publication number 20250105153
- Publication date Mar 27, 2025
- Samsung Electronics Co., Ltd.
- Jintae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER
- Publication number 20250107201
- Publication date Mar 27, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...
- Publication number 20250107247
- Publication date Mar 27, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL STRUCTURES...
- Publication number 20250098324
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGION WITH UNDERBLOCKI...
- Publication number 20250081562
- Publication date Mar 6, 2025
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063811
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS
- Publication number 20250063765
- Publication date Feb 20, 2025
- SAMSUNG ELECTRONICS CO,. LTD.
- Jeonghyuk Yim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063782
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250062192
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL ARCHITECTURE OF SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR C...
- Publication number 20250031456
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jintae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...
- Publication number 20250022773
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- JINTAE KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURE INCLUDING METAL LINE AND TOP VIA FORMED THRO...
- Publication number 20250022797
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Jaemyung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCTURE
- Publication number 20240429130
- Publication date Dec 26, 2024
- Samsung Electronics Co., Ltd.
- Tae Sun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...
- Publication number 20240429169
- Publication date Dec 26, 2024
- SAMSUNG ELECTRONICS CO,. LTD.
- Saehan PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...
- Publication number 20240421154
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN
- Publication number 20240413213
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL ARCHITECTURE WITH IMPROVED BACKSIDE POWER RAIL THROUGH ENGINEE...
- Publication number 20240413160
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Jintae KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...
- Publication number 20240395900
- Publication date Nov 28, 2024
- Samsung Electronics Co., Ltd.
- Seungchan YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MACRO DEVICE-UNDER-TEST STRUCTURE FOR MEASURING CONTACT RESISTANCE...
- Publication number 20240387555
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jaehong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...
- Publication number 20240379780
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Keumseok PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING INTERGATE SPACER AND METHODS O...
- Publication number 20240371880
- Publication date Nov 7, 2024
- SAMSUNG ELECTRONICS CO,. LTD.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...
- Publication number 20240363633
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- MYUNG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...
- Publication number 20240363491
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- SEUNGCHAN YUN
- H01 - BASIC ELECTRIC ELEMENTS

Kang-ill Seo

Person

Patents Grantslast 30 patents

3D stacked chip that shares power rails

Resistance measuring structures of stacked devices

Integrated circuit devices including transistor stacks having diffe...

Semiconductor device including backside contact structure having po...

Resistor structures of integrated circuit devices including stacked...

Integrated circuit with buried power rail and methods of manufactur...

Integrated circuit devices including a power rail and methods of fo...

Size-controllable multi-stack semiconductor device and method of ma...

Semiconductor device including gate contact structure formed from g...

Integrated circuit devices including a power distribution network a...

Selective single diffusion/electrical barrier

Multi-stack semiconductor device with zebra nanosheet structure

Devices including stacked nanosheet transistors

Through silicon buried power rail implemented backside power distri...

Diode structures of stacked devices and methods of forming the same

Integrated circuit devices including discharging path and methods o...

Method of manufacturing a three dimensional integrated semiconducto...

Semiconductor device having stepped multi-stack transistor structure

Integrated circuit devices including transistor stacks having diffe...

Multi-fin vertical field effect transistor and single-fin vertical...

Resistance measuring structures of stacked devices

Through silicon buried power rail implemented backside power distri...

Devices including stacked nanosheet transistors

Diode structures of stacked devices and methods of forming the same

Three dimensional integrated semiconductor architecture having alig...

Different diffusion break structures for three-dimensional stacked...

Integrated circuit devices including an element having a non-linear...

Semiconductor device having stepped multi-stack transistor structure

Method of manufacturing an integrated circuit with buried power rail

Low current leakage finFET and methods of making the same

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE INCLUDING A PFET WITH A SILICON GERMANIUM...

SEMICONDUCTOR DEVICE INCLUDING METAL LINES HAVING DIFFERENT METAL P...

SEMICONDUCTOR DEVICE INCLUDING GATE CONTACT STRUCTURE FORMED FROM G...

MULTI-STACK SEMICONDUCTOR DEVICE WITH ZEBRA NANOSHEET STRUCTURE

INTEGRATED CIRCUIT DEVICES INCLUDING LOWER INTERCONNECT METAL LAYER...

SELECTIVE SINGLE DIFFUSION/ELECTRICAL BARRIER

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHOD...

3D-STACKED SEMICONDUCTOR DEVICE HAVING DIFFERENT CHANNEL STRUCTURES...

SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGION WITH UNDERBLOCKI...

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

DEVICES INCLUDING STACKED NANOSHEET TRANSISTORS

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

CELL ARCHITECTURE OF SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR C...

INTEGRATED CIRCUIT DEVICES INCLUDING STACKED FIELD-EFFECT TRANSISTO...

INTERCONNECT STRUCTURE INCLUDING METAL LINE AND TOP VIA FORMED THRO...

SEMICONDUCTOR DEVICE INCLUDING SELF-ALIGNED BACKSIDE CONTACT STRUCTURE

THERMAL BUDGET ENHANCED BURIED POWER RAIL AND METHOD OF MANUFACTURI...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...

NOBLE FORMATION METHOD OF CMOS FOR 3D STACKED FET WITH BSPDN

CELL ARCHITECTURE WITH IMPROVED BACKSIDE POWER RAIL THROUGH ENGINEE...

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SOURCE/DRAIN CONTACT STRUCT...

MACRO DEVICE-UNDER-TEST STRUCTURE FOR MEASURING CONTACT RESISTANCE...

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN REGIONS VERT...

INTEGRATED CIRCUIT DEVICES INCLUDING INTERGATE SPACER AND METHODS O...

INTEGRATED CIRCUIT DEVICE INCLUDING STACKED TRANSISTORS AND METHODS...

INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION...