Kang-Soo Chu

Person

Yongin-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating semiconductor device having multiple gate die...
- Patent number 7,846,790
- Issue date Dec 7, 2010
- Samsung Electronics Co., Ltd.
- Sung-Gun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inkjet print head and method of fabricating the same
- Patent number 7,726,777
- Issue date Jun 1, 2010
- Samsung Electronics Co., Ltd.
- Jae-Sik Min
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Electrode line structure having fine line width and method of formi...
- Patent number 7,510,969
- Issue date Mar 31, 2009
- Samsung Electronics Co., Ltd.
- Joo-won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MEMS tunable capacitor with a wide tuning range
- Patent number 7,394,641
- Issue date Jul 1, 2008
- Samsung Electronics Co., Ltd.
- Seok-Jun Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating MEMS tunable capacitor with wide tuning range
- Patent number 7,203,052
- Issue date Apr 10, 2007
- Samsung Electronics Co., Ltd.
- Seok-Jun Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode line structure having fine line width and method of formi...
- Patent number 7,180,190
- Issue date Feb 20, 2007
- Samsung Electronics, Co., Ltd.
- Joo-won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon dioxide film using siloxane
- Patent number 7,084,076
- Issue date Aug 1, 2006
- Samsung Electronics, Co., Ltd.
- Jae-eun Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MEMS tunable capacitor with a wide tuning range and method of fabri...
- Patent number 7,042,698
- Issue date May 9, 2006
- Samsung Electronics Co., Ltd.
- Seok-Jun Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming silicon dioxide layers on substrates using atom...
- Patent number 6,992,019
- Issue date Jan 31, 2006
- Samsung Electronics Co., Ltd.
- Joo-won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming fine patterns using silicon oxide layer
- Patent number 6,989,231
- Issue date Jan 24, 2006
- Samsung Electronics, Co., Ltd.
- Jae-eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an etch stopper formed of a sin layer b...
- Patent number 6,858,533
- Issue date Feb 22, 2005
- Samsung Electronics Co., Ltd.
- Kang-soo Chu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE DIE...
- Publication number 20080099856
- Publication date May 1, 2008
- Sung-Gun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode line structure having fine line width and method of formi...
- Publication number 20070166885
- Publication date Jul 19, 2007
- Samsung Electronics, Co., Ltd.
- Joo-won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMS tunable capacitor with a wide tuning range
- Publication number 20060215348
- Publication date Sep 28, 2006
- Samsung Electronics Co., Ltd.
- Seok-Jun Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating MEMS tunable capacitor with wide tuning range
- Publication number 20060187611
- Publication date Aug 24, 2006
- Samsung Electronics Co., Ltd.
- Seok-Jun Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inkjet print head and method of fabricating the same
- Publication number 20060103693
- Publication date May 18, 2006
- Jae-Sik Min
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Application
Semiconductor device with silicon dioxide layers formed using atomi...
- Publication number 20060040510
- Publication date Feb 23, 2006
- Joo-won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MEMS tunable capacitor with a wide tuning range and method of fabri...
- Publication number 20050168910
- Publication date Aug 4, 2005
- Seok-Jun Won
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an etch stopper formed of a SiN layer b...
- Publication number 20050146037
- Publication date Jul 7, 2005
- Samsung Electronics, Co., Ltd.
- Kang-soo Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an etch stopper formed of a SiN layer b...
- Publication number 20050142781
- Publication date Jun 30, 2005
- Kang-soo Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing CMOS transistor with LDD structure
- Publication number 20040180483
- Publication date Sep 16, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-Eun Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming silicon dioxide film using siloxane
- Publication number 20040180557
- Publication date Sep 16, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-eun Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Atomic layer deposition apparatus and method for preventing generat...
- Publication number 20040107897
- Publication date Jun 10, 2004
- Seung-Hwan Lee
- C30 - CRYSTAL GROWTH
Information Patent Application
Electrode line structure having fine line width and method of formi...
- Publication number 20040056292
- Publication date Mar 25, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Joo-Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an etch stopper formed of a SiN layer b...
- Publication number 20040046189
- Publication date Mar 11, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Kang-Soo Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming fine patterns using silicon oxide layer
- Publication number 20040029052
- Publication date Feb 12, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Jae-eun Park
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Methods for forming silicon dioxide layers on substrates using atom...
- Publication number 20040018694
- Publication date Jan 29, 2004
- SAMSUNG ELECTRONICS CO., LTD.
- Joo-won Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Kang-Soo Chu

Person

Patents Grantslast 30 patents

Method of fabricating semiconductor device having multiple gate die...

Inkjet print head and method of fabricating the same

Electrode line structure having fine line width and method of formi...

MEMS tunable capacitor with a wide tuning range

Method of fabricating MEMS tunable capacitor with wide tuning range

Electrode line structure having fine line width and method of formi...

Method for forming silicon dioxide film using siloxane

MEMS tunable capacitor with a wide tuning range and method of fabri...

Methods for forming silicon dioxide layers on substrates using atom...

Method of forming fine patterns using silicon oxide layer

Semiconductor device having an etch stopper formed of a sin layer b...

Patents Applicationslast 30 patents

METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING MULTIPLE GATE DIE...

Electrode line structure having fine line width and method of formi...

MEMS tunable capacitor with a wide tuning range

Method of fabricating MEMS tunable capacitor with wide tuning range

Inkjet print head and method of fabricating the same

Semiconductor device with silicon dioxide layers formed using atomi...

MEMS tunable capacitor with a wide tuning range and method of fabri...

Semiconductor device having an etch stopper formed of a SiN layer b...

Semiconductor device having an etch stopper formed of a SiN layer b...

Method of manufacturing CMOS transistor with LDD structure

Method for forming silicon dioxide film using siloxane

Atomic layer deposition apparatus and method for preventing generat...

Electrode line structure having fine line width and method of formi...

Semiconductor device having an etch stopper formed of a SiN layer b...

Method of forming fine patterns using silicon oxide layer

Methods for forming silicon dioxide layers on substrates using atom...