Kangguo Cheng

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiered-profile contact for semiconductor
- Patent number 12,148,663
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 12,136,573
- Issue date Nov 5, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform interfacial layer on vertical fin sidewalls of vertical tra...
- Patent number 12,132,098
- Issue date Oct 29, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor with wrap-around contact structure
- Patent number 12,119,346
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming N-type and P-type horizontal gate-all-around devices
- Patent number 12,113,067
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact MRAM architecture with magnetic bottom electrode
- Patent number 12,112,782
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Source/drain contact positioning under power rail
- Patent number 12,107,132
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with self-aligned gate cut
- Patent number 12,107,014
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate thinning for a backside power distribution network
- Patent number 12,106,969
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact for VTFETs
- Patent number 12,107,147
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor having a wrap-around gate with bot...
- Patent number 12,094,949
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried local interconnect between complementary field-effect transi...
- Patent number 12,080,714
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with power rail disposed under active gate
- Patent number 12,046,643
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Authenticity and yield by reading defective cells
- Patent number 12,027,224
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Julien Frougier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electronic fuse with passive two-terminal phase change material and...
- Patent number 12,002,753
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual dielectric pillar fork sheet device
- Patent number 12,002,808
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet-based semiconductor structure with dielectric pillar
- Patent number 12,002,850
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with late source/drain epitaxy
- Patent number 11,996,480
- Issue date May 28, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fin field effect transistor devices with reduced top sourc...
- Patent number 11,978,783
- Issue date May 7, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact and isolation in monolithically stacked VTFET
- Patent number 11,978,796
- Issue date May 7, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nano-sheet transistors with different threshold volt...
- Patent number RE49954
- Issue date Apr 30, 2024
- TESSERA LLC
- Karthik Balakrishnan
Information Patent Grant
Method probe with high density electrodes, and a formation thereof
- Patent number 11,963,774
- Issue date Apr 23, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM...
- Patent number 11,961,544
- Issue date Apr 16, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
PHASE CHANGE MEMORY CELL
- Publication number 20240415032
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Application
FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES
- Publication number 20240363755
- Publication date Oct 31, 2024
- Adeia Semiconductor Solutions LLC
- Huiming Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...
- Publication number 20240339538
- Publication date Oct 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL
- Publication number 20240324476
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MATERIAL INCLUDING DEUTERIUM
- Publication number 20240324475
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID-CHANNEL NANO-SHEET FETS
- Publication number 20240274475
- Publication date Aug 15, 2024
- Adeia Semiconductor Solutions LLC
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...
- Publication number 20240249980
- Publication date Jul 25, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT
- Publication number 20240242012
- Publication date Jul 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL
- Publication number 20240224819
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Chanro Park
Information Patent Application
DECOUPLING MIM CAPACITOR
- Publication number 20240213141
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY
- Publication number 20240215462
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Ning Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS
- Publication number 20240202305
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT
- Publication number 20240203990
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL
- Publication number 20240186387
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS
- Publication number 20240188282
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE
- Publication number 20240186325
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY
- Publication number 20240180047
- Publication date May 30, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK
- Publication number 20240178136
- Publication date May 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SECURE ONE-TIME WAFER IDENTIFICATION IN SPLIT MANUFACTURING
- Publication number 20240170313
- Publication date May 23, 2024
- International Business Machines Corporation
- Carl Radens
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING
- Publication number 20240147874
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DIELECTRIC PILLARS
- Publication number 20240145472
- Publication date May 2, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ASYMMETRIC SOURCE/DRAIN REGIONS
- Publication number 20240145538
- Publication date May 2, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING MULTIPLE GATE DIELECTRICS AND MULTIPLE W...
- Publication number 20240145539
- Publication date May 2, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR...
- Publication number 20240147876
- Publication date May 2, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-BASED GATE-ALL-AROUND TRANSISTORS
- Publication number 20240145584
- Publication date May 2, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP VIA WITH INTERNAL VOID FOR STRESS MITIGATION
- Publication number 20240145407
- Publication date May 2, 2024
- International Business Machines Corporation
- JULIEN FROUGIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL WITH HEATER
- Publication number 20240130256
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Kangguo Cheng

Person

Patents Grantslast 30 patents

Forming nanosheet transistor using sacrificial spacer and inner spa...

Tiered-profile contact for semiconductor

Ferroelectric random-access memory cell

Fabrication of a vertical fin field effect transistor with reduced...

Semiconductor structure having two-dimensional channel

Backside electrical contacts to buried power rails

Uniform interfacial layer on vertical fin sidewalls of vertical tra...

Vertical field-effect transistor with wrap-around contact structure

Forming N-type and P-type horizontal gate-all-around devices

Compact MRAM architecture with magnetic bottom electrode

Source/drain contact positioning under power rail

Nanosheet transistors with self-aligned gate cut

Substrate thinning for a backside power distribution network

Self-aligned gate contact for VTFETs

Gate-all-around field effect transistors having end portions of nan...

Fin-type field effect transistor having a wrap-around gate with bot...

Semiconductor structures with backside gate contacts

Complementary field effect transistor devices

Buried local interconnect between complementary field-effect transi...

Semiconductor structures with power rail disposed under active gate

Authenticity and yield by reading defective cells

Electronic fuse with passive two-terminal phase change material and...

Dual dielectric pillar fork sheet device

Nanosheet-based semiconductor structure with dielectric pillar

Vertical transistor with late source/drain epitaxy

Vertical fin field effect transistor devices with reduced top sourc...

Contact and isolation in monolithically stacked VTFET

Fabrication of nano-sheet transistors with different threshold volt...

Method probe with high density electrodes, and a formation thereof

Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM...

Patents Applicationslast 30 patents

NANOSHEET TRANSISTOR

PHASE CHANGE MEMORY CELL

FORMING A SACRIFICIAL LINER FOR DUAL CHANNEL DEVICES

GATE-ALL-AROUND FIELD EFFECT TRANSISTORS WITH INNER SPACERS AND MET...

STACKED RESISTIVE RANDOM-ACCESS MEMORY CROSS-POINT CELL

PHASE CHANGE MATERIAL INCLUDING DEUTERIUM

HYBRID-CHANNEL NANO-SHEET FETS

FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...

HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT

SEAMED RESISTIVE RANDOM ACCESS MEMORY CELL

DECOUPLING MIM CAPACITOR

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

TWO-TRANSISTOR CHIP AND THREE-TRANSISTOR CHIP IDENTIFICATION BIT CELLS

STACKED CMOS DEVICES WITH TWO DIELECTRIC MATERIALS IN A GATE CUT

VIA AND SOURCE/DRAIN CONTACT LANDING UNDER POWER RAIL

STRUCTURE WITH FRONTSIDE AND BACKSIDE DRAMS

STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE

PHASE CHANGE MEMORY

LOCAL INTERCONNECT FORMATION AT DOUBLE DIFFUSION BREAK

SECURE ONE-TIME WAFER IDENTIFICATION IN SPLIT MANUFACTURING

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

PHASE-CHANGE MEMORY DEVICE WITH CONDUCTIVE CLADDING

SEMICONDUCTOR STRUCTURE WITH DIELECTRIC PILLARS

TRANSISTORS WITH ASYMMETRIC SOURCE/DRAIN REGIONS

STACKED TRANSISTORS HAVING MULTIPLE GATE DIELECTRICS AND MULTIPLE W...

THINNED PHASE CHANGE MATERIAL IN BRIDGE CELL MEMORY AS A WEIGHT FOR...

SPIN-BASED GATE-ALL-AROUND TRANSISTORS

DEEP VIA WITH INTERNAL VOID FOR STRESS MITIGATION

PHASE CHANGE MEMORY CELL WITH HEATER

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS