Kangho LEE

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
High energy barrier perpendicular magnetic tunnel junction element...
- Patent number 10,529,917
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM chip magnetic shielding
- Patent number 10,510,946
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Bharat Bhushan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite spacer layer for magnetoresistive memory
- Patent number 10,297,745
- Issue date May 21, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI STT-MRAM design
- Patent number 10,121,959
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yinjie Ding
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 10,032,980
- Issue date Jul 24, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Seungmo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 9,865,801
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with programmable memory cells and methods for...
- Patent number 9,799,387
- Issue date Oct 24, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DIFFERENTIAL SENSING CELL DESIGN FOR STT MRAM
- Publication number 20180374893
- Publication date Dec 27, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY
- Publication number 20180130943
- Publication date May 10, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Energy Barrier Perpendicular Magnetic Tunnel Junction Element...
- Publication number 20180123027
- Publication date May 3, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kazutaka YAMANE
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20170345999
- Publication date Nov 30, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Seungmo Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20170309813
- Publication date Oct 26, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER LAYER FOR MAGNETORESISTIVE MEMORY
- Publication number 20170125664
- Publication date May 4, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM CHIP MAGNETIC SHIELDING
- Publication number 20170025471
- Publication date Jan 26, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Bharat BHUSHAN
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High energy barrier perpendicular magnetic tunnel junction element...

MRAM chip magnetic shielding

Composite spacer layer for magnetoresistive memory

FDSOI STT-MRAM design

Integrated circuits with magnetic tunnel junctions and methods for...

Integrated circuits with magnetic tunnel junctions and methods for...

Integrated circuits with programmable memory cells and methods for...

Patents Applicationslast 30 patents

DIFFERENTIAL SENSING CELL DESIGN FOR STT MRAM

MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY

High Energy Barrier Perpendicular Magnetic Tunnel Junction Element...

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

SPACER LAYER FOR MAGNETORESISTIVE MEMORY

MRAM CHIP MAGNETIC SHIELDING