Karen E. Moore

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming semiconductor devices using sacrificial capping...
- Patent number 11,784,236
- Issue date Oct 10, 2023
- NXP USA, INC.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,957,790
- Issue date Mar 23, 2021
- NXP USA, INC.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,825,924
- Issue date Nov 3, 2020
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a recessed ohmic contact and methods of f...
- Patent number 10,541,324
- Issue date Jan 21, 2020
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 10,522,670
- Issue date Dec 31, 2019
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,799,760
- Issue date Oct 24, 2017
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with integrated Schottky diodes and methods o...
- Patent number 9,685,345
- Issue date Jun 20, 2017
- NXP USA, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving E-beam lithography gate metal profile for enha...
- Patent number 9,281,204
- Issue date Mar 8, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Karen E. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed gallium nitride transistor devices
- Patent number 9,276,101
- Issue date Mar 1, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,153,448
- Issue date Oct 6, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making semiconductor devices with low leakage Schottky c...
- Patent number 9,123,645
- Issue date Sep 1, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 9,111,868
- Issue date Aug 18, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed gallium nitride transistor devices
- Patent number 9,099,433
- Issue date Aug 4, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively etched surface passivation
- Patent number 8,946,776
- Issue date Feb 3, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with low leakage Schottky contacts
- Patent number 8,592,878
- Issue date Nov 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor devices with low leakage Schottky...
- Patent number 7,935,620
- Issue date May 3, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of making the same
- Patent number 6,630,746
- Issue date Oct 7, 2003
- Motorola, Inc.
- David P. Mancini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor and method therefor
- Patent number 6,180,495
- Issue date Jan 30, 2001
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of electron beam lithography on very high resistivity substr...
- Patent number 6,127,272
- Issue date Oct 3, 2000
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an alignment mark
- Patent number 6,083,806
- Issue date Jul 4, 2000
- Motorola, Inc.
- David P. Mancini
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Silicon carbide transistor and method
- Patent number 6,002,148
- Issue date Dec 14, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device with a thinned substrate
- Patent number 5,933,750
- Issue date Aug 3, 1999
- Motorola, Inc.
- Syd R. Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide transistor and method
- Patent number 5,885,860
- Issue date Mar 23, 1999
- Motorola, Inc.
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MESFET having a termination layer in the channel layer
- Patent number 5,693,969
- Issue date Dec 2, 1997
- Motorola
- Charles E. Weitzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a silicon carbide JFET
- Patent number 5,641,695
- Issue date Jun 24, 1997
- Motorola
- Karen E. Moore
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...
- Publication number 20220102529
- Publication date Mar 31, 2022
- NXP USA, Inc.
- Jenn Hwa Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20190157440
- Publication date May 23, 2019
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20170317202
- Publication date Nov 2, 2017
- NXP USA, Inc.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF...
- Publication number 20170294531
- Publication date Oct 12, 2017
- NXP USA, Inc.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20170236929
- Publication date Aug 17, 2017
- NXP USA, Inc.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20150357452
- Publication date Dec 10, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Improving E-Beam Lithography Gate Metal Profile for Enha...
- Publication number 20150311084
- Publication date Oct 29, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Karen E. Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Speed Gallium Nitride Transistor Devices
- Publication number 20150295075
- Publication date Oct 15, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF...
- Publication number 20150137135
- Publication date May 21, 2015
- BRUCE M. GREEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
- Publication number 20150132932
- Publication date May 14, 2015
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTKY CO...
- Publication number 20140087550
- Publication date Mar 27, 2014
- FREESCALE SEMICONDUCTOR, INC.
- BRUCE M. GREEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20130341678
- Publication date Dec 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Selectively Etched Surface Passivation
- Publication number 20130341679
- Publication date Dec 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Speed Gallium Nitride Transistor Devices
- Publication number 20130277680
- Publication date Oct 24, 2013
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR
- Publication number 20120156843
- Publication date Jun 21, 2012
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTTKY CONTACTS
- Publication number 20110156051
- Publication date Jun 30, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE SCHOTTKY CONTACT DEVICES AND METHOD
- Publication number 20090146191
- Publication date Jun 11, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Bruce M. Green
- H01 - BASIC ELECTRIC ELEMENTS

Karen E. Moore

Person

Patents Grantslast 30 patents

Methods for forming semiconductor devices using sacrificial capping...

Semiconductor device with selectively etched surface passivation

Semiconductor device with selectively etched surface passivation

Semiconductor device with a recessed ohmic contact and methods of f...

Semiconductor device with selectively etched surface passivation

Semiconductor device with selectively etched surface passivation

Semiconductor devices with integrated Schottky diodes and methods o...

Method for improving E-beam lithography gate metal profile for enha...

High speed gallium nitride transistor devices

Semiconductor device with selectively etched surface passivation

Methods of making semiconductor devices with low leakage Schottky c...

Semiconductor device with selectively etched surface passivation

High speed gallium nitride transistor devices

Semiconductor device with selectively etched surface passivation

Semiconductor devices with low leakage Schottky contacts

Method for forming semiconductor devices with low leakage Schottky...

Semiconductor device and method of making the same

Silicon carbide transistor and method therefor

Method of electron beam lithography on very high resistivity substr...

Method of forming an alignment mark

Silicon carbide transistor and method

Method of fabricating a semiconductor device with a thinned substrate

Silicon carbide transistor and method

MESFET having a termination layer in the channel layer

Method of forming a silicon carbide JFET

Patents Applicationslast 30 patents

METHODS FOR FORMING SEMICONDUCTOR DEVICES USING SACRIFICIAL CAPPING...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

Semiconductor Device with Selectively Etched Surface Passivation

Method for Improving E-Beam Lithography Gate Metal Profile for Enha...

High Speed Gallium Nitride Transistor Devices

SEMICONDUCTOR DEVICES WITH INTEGRATED SCHOTKY DIODES AND METHODS OF...

SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION

METHODS OF MAKING SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTKY CO...

Semiconductor Device with Selectively Etched Surface Passivation

Semiconductor Device with Selectively Etched Surface Passivation

High Speed Gallium Nitride Transistor Devices

DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR

SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTTKY CONTACTS

LOW LEAKAGE SCHOTTKY CONTACT DEVICES AND METHOD