KARTHIK JAMBUNATHAN

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial oxide plug for strained transistors
- Patent number 11,757,037
- Issue date Sep 12, 2023
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,735,670
- Issue date Aug 22, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium nMOS transistors
- Patent number 11,699,756
- Issue date Jul 11, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire for transistor integration
- Patent number 11,588,017
- Issue date Feb 21, 2023
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire transistors employing carbon-based layers
- Patent number 11,538,905
- Issue date Dec 27, 2022
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Substrate defect blocking layers for strained channel semiconductor...
- Patent number 11,482,457
- Issue date Oct 25, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside source/drain replacement for semiconductor devices with me...
- Patent number 11,444,166
- Issue date Sep 13, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming crystalline source/drain contacts on semiconductor devices
- Patent number 11,430,787
- Issue date Aug 30, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source electrode and drain electrode protection for nanowire transi...
- Patent number 11,411,096
- Issue date Aug 9, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diverse transistor channel materials enabled by thin, inverse-grade...
- Patent number 11,404,575
- Issue date Aug 2, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration method for finfet with tightly controlled multiple fin...
- Patent number 11,335,600
- Issue date May 17, 2022
- Intel Corporation
- Seiyon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device, method and system for promoting channel stress in a NMOS tr...
- Patent number 11,264,501
- Issue date Mar 1, 2022
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial oxide plug for strained transistors
- Patent number 11,251,302
- Issue date Feb 15, 2022
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain diffusion barrier for germanium NMOS transistors
- Patent number 11,222,977
- Issue date Jan 11, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-selective epitaxial source/drain deposition to reduce dopant di...
- Patent number 11,189,730
- Issue date Nov 30, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors employing carbon-based etch stop layer for preserving s...
- Patent number 11,121,030
- Issue date Sep 14, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with germanium-rich channel transistors includin...
- Patent number 11,101,350
- Issue date Aug 24, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped insulator cap to reduce source/drain diffusion for germanium...
- Patent number 11,101,356
- Issue date Aug 24, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors employing non-selective deposition of source/drain mate...
- Patent number 11,101,268
- Issue date Aug 24, 2021
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with lattice matched gate structure
- Patent number 11,081,570
- Issue date Aug 3, 2021
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with channel and sub-channel regions with distinct comp...
- Patent number 11,069,795
- Issue date Jul 20, 2021
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon substrate modification to enable formation of thin, relaxed...
- Patent number 11,056,592
- Issue date Jul 6, 2021
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching fin core to provide fin doubling
- Patent number 11,024,737
- Issue date Jun 1, 2021
- Intel Corporation
- Chandra S. Mohapatra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for increasing channel region tensile strain in n-MOS de...
- Patent number 11,011,620
- Issue date May 18, 2021
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial buffer to reduce sub-channel leakage in MOS transistors
- Patent number 11,004,954
- Issue date May 11, 2021
- Intel Corporation
- Karthik Jambunathan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming doped source/drain contacts and structures forme...
- Patent number 11,004,978
- Issue date May 11, 2021
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Geometry tuning of fin based transistor
- Patent number 10,944,006
- Issue date Mar 9, 2021
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Backside source/drain replacement for semiconductor devices with me...
- Patent number 10,892,337
- Issue date Jan 12, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for controlling transistor sub-fin leakage
- Patent number 10,879,241
- Issue date Dec 29, 2020
- Intel Corporation
- Glenn A. Glass
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Techniques for forming transistors including group III-V material n...
- Patent number 10,749,032
- Issue date Aug 18, 2020
- Intel Corporation
- Chandra S. Mohapatra
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
STRAIN COMPENSATION VIA ION IMPLANTATION IN RELAXED BUFFER LAYER TO...
- Publication number 20230207317
- Publication date Jun 29, 2023
- Intel Corporation
- Cory C. Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR SHUNTED JOSEPHSON JUNCTIONS
- Publication number 20220384704
- Publication date Dec 1, 2022
- Microsoft Technology Licensing, LLC
- Richard P. ROUSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE ELECTRODE AND DRAIN ELECTRODE PROTECTION FOR NANOWIRE TRANSI...
- Publication number 20220336634
- Publication date Oct 20, 2022
- Intel Corporation
- Karthik JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE PLUG FOR STRAINED TRANSISTORS
- Publication number 20220131007
- Publication date Apr 28, 2022
- Intel Corporation
- Karthik JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20220093797
- Publication date Mar 24, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...
- Publication number 20220037530
- Publication date Feb 3, 2022
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SUBSTRATE MODIFICATION TO ENABLE FORMATION OF THIN, RELAXED...
- Publication number 20210083116
- Publication date Mar 18, 2021
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...
- Publication number 20210074823
- Publication date Mar 11, 2021
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED INSULATOR CAP TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM...
- Publication number 20210005722
- Publication date Jan 7, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS
- Publication number 20210005748
- Publication date Jan 7, 2021
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIVERSE TRANSISTOR CHANNEL MATERIALS ENABLED BY THIN, INVERSE-GRADE...
- Publication number 20200411691
- Publication date Dec 31, 2020
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH CHANNEL AND SUB-CHANNEL REGIONS WITH DISTINCT COMP...
- Publication number 20200411513
- Publication date Dec 31, 2020
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CRYSTALLINE SOURCE/DRAIN CONTACTS ON SEMICONDUCTOR DEVICES
- Publication number 20200365585
- Publication date Nov 19, 2020
- Intel Corporation
- Karthik JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED STI TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM NMOS TRANS...
- Publication number 20200365711
- Publication date Nov 19, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE FOR TRANSISTOR INTEGRATION
- Publication number 20200303499
- Publication date Sep 24, 2020
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-RICH CHANNEL TRANSISTORS INCLUDING ONE OR MORE DOPANT DIF...
- Publication number 20200273952
- Publication date Aug 27, 2020
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE ELECTRODE AND DRAIN ELECTRODE PROTECTION FOR NANOWIRE TRANSI...
- Publication number 20200273998
- Publication date Aug 27, 2020
- Intel Corporation
- Karthik JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...
- Publication number 20200258982
- Publication date Aug 13, 2020
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM FOR PROMOTING CHANNEL STRESS IN A NMOS TR...
- Publication number 20200227558
- Publication date Jul 16, 2020
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL OXIDE PLUG FOR STRAINED TRANSISTORS
- Publication number 20200220014
- Publication date Jul 9, 2020
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE DEFECT BLOCKING LAYERS FOR STRAINED CHANNEL SEMICONDUCTOR...
- Publication number 20200219774
- Publication date Jul 9, 2020
- Intel Corporation
- Karthik Jambunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING DOPED SOURCE/DRAIN CONTACTS AND STRUCTURES FORME...
- Publication number 20200176601
- Publication date Jun 4, 2020
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL TO SOURCE/DRAIN CONTACT AREA USING THIN NUCLEATION LAYER AND...
- Publication number 20200161440
- Publication date May 21, 2020
- Intel Corporation
- Ritesh Jhaveri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS EMPLOYING NON-SELECTIVE DEPOSITION OF SOURCE/DRAIN MATE...
- Publication number 20190355721
- Publication date Nov 21, 2019
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-RICH CHANNEL TRANSISTORS INCLUDING ONE OR MORE DOPANT DIF...
- Publication number 20190348500
- Publication date Nov 14, 2019
- Intel Corporation
- Glenn A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS EMPLOYING CARBON-BASED ETCH STOP LAYER FOR PRESERVING S...
- Publication number 20190341300
- Publication date Nov 7, 2019
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...
- Publication number 20190221649
- Publication date Jul 18, 2019
- Intel Corporation
- GLENN A. GLASS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE TRANSISTORS EMPLOYING CARBON-BASED LAYERS
- Publication number 20190221641
- Publication date Jul 18, 2019
- Intel Corporation
- Glenn A. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL BUFFER TO REDUCE SUB-CHANNEL LEAKAGE IN MOS TRANSISTORS
- Publication number 20190214479
- Publication date Jul 11, 2019
- Intel Corporation
- KARTHIK JAMBUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR INCREASING CHANNEL REGION TENSILE STRAIN IN N-MOS DE...
- Publication number 20190207015
- Publication date Jul 4, 2019
- Intel Corporation
- RISHABH MEHANDRU
- H01 - BASIC ELECTRIC ELEMENTS

KARTHIK JAMBUNATHAN

Person

Patents Grantslast 30 patents

Epitaxial oxide plug for strained transistors

Non-selective epitaxial source/drain deposition to reduce dopant di...

Source/drain diffusion barrier for germanium nMOS transistors

Nanowire for transistor integration

Nanowire transistors employing carbon-based layers

Substrate defect blocking layers for strained channel semiconductor...

Backside source/drain replacement for semiconductor devices with me...

Forming crystalline source/drain contacts on semiconductor devices

Source electrode and drain electrode protection for nanowire transi...

Diverse transistor channel materials enabled by thin, inverse-grade...

Integration method for finfet with tightly controlled multiple fin...

Device, method and system for promoting channel stress in a NMOS tr...

Epitaxial oxide plug for strained transistors

Source/drain diffusion barrier for germanium NMOS transistors

Non-selective epitaxial source/drain deposition to reduce dopant di...

Transistors employing carbon-based etch stop layer for preserving s...

Integrated circuit with germanium-rich channel transistors includin...

Doped insulator cap to reduce source/drain diffusion for germanium...

Transistors employing non-selective deposition of source/drain mate...

Transistors with lattice matched gate structure

Transistors with channel and sub-channel regions with distinct comp...

Silicon substrate modification to enable formation of thin, relaxed...

Etching fin core to provide fin doubling

Techniques for increasing channel region tensile strain in n-MOS de...

Epitaxial buffer to reduce sub-channel leakage in MOS transistors

Methods of forming doped source/drain contacts and structures forme...

Geometry tuning of fin based transistor

Backside source/drain replacement for semiconductor devices with me...

Techniques for controlling transistor sub-fin leakage

Techniques for forming transistors including group III-V material n...

Patents Applicationslast 30 patents

STRAIN COMPENSATION VIA ION IMPLANTATION IN RELAXED BUFFER LAYER TO...

INTEGRATION SCHEME FOR SHUNTED JOSEPHSON JUNCTIONS

SOURCE ELECTRODE AND DRAIN ELECTRODE PROTECTION FOR NANOWIRE TRANSI...

EPITAXIAL OXIDE PLUG FOR STRAINED TRANSISTORS

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...

SILICON SUBSTRATE MODIFICATION TO ENABLE FORMATION OF THIN, RELAXED...

BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...

DOPED INSULATOR CAP TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM...

SOURCE/DRAIN DIFFUSION BARRIER FOR GERMANIUM NMOS TRANSISTORS

DIVERSE TRANSISTOR CHANNEL MATERIALS ENABLED BY THIN, INVERSE-GRADE...

TRANSISTORS WITH CHANNEL AND SUB-CHANNEL REGIONS WITH DISTINCT COMP...

FORMING CRYSTALLINE SOURCE/DRAIN CONTACTS ON SEMICONDUCTOR DEVICES

DOPED STI TO REDUCE SOURCE/DRAIN DIFFUSION FOR GERMANIUM NMOS TRANS...

NANOWIRE FOR TRANSISTOR INTEGRATION

GERMANIUM-RICH CHANNEL TRANSISTORS INCLUDING ONE OR MORE DOPANT DIF...

SOURCE ELECTRODE AND DRAIN ELECTRODE PROTECTION FOR NANOWIRE TRANSI...

NON-SELECTIVE EPITAXIAL SOURCE/DRAIN DEPOSITION TO REDUCE DOPANT DI...

DEVICE, METHOD AND SYSTEM FOR PROMOTING CHANNEL STRESS IN A NMOS TR...

EPITAXIAL OXIDE PLUG FOR STRAINED TRANSISTORS

SUBSTRATE DEFECT BLOCKING LAYERS FOR STRAINED CHANNEL SEMICONDUCTOR...

METHODS OF FORMING DOPED SOURCE/DRAIN CONTACTS AND STRUCTURES FORME...

METAL TO SOURCE/DRAIN CONTACT AREA USING THIN NUCLEATION LAYER AND...

TRANSISTORS EMPLOYING NON-SELECTIVE DEPOSITION OF SOURCE/DRAIN MATE...

GERMANIUM-RICH CHANNEL TRANSISTORS INCLUDING ONE OR MORE DOPANT DIF...

TRANSISTORS EMPLOYING CARBON-BASED ETCH STOP LAYER FOR PRESERVING S...

BACKSIDE SOURCE/DRAIN REPLACEMENT FOR SEMICONDUCTOR DEVICES WITH ME...

NANOWIRE TRANSISTORS EMPLOYING CARBON-BASED LAYERS

EPITAXIAL BUFFER TO REDUCE SUB-CHANNEL LEAKAGE IN MOS TRANSISTORS

TECHNIQUES FOR INCREASING CHANNEL REGION TENSILE STRAIN IN N-MOS DE...