Katsuhiro Tsukamoto

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Peripheral structure of a chip as a semiconductor device, and manuf...
- Patent number 6,211,070
- Issue date Apr 3, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Masanobu Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer and device structure
- Patent number 5,945,716
- Issue date Aug 31, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Masanobu Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for making the same
- Patent number 5,883,408
- Issue date Mar 16, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Katsuhiro Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device having a capacitor with im...
- Patent number 5,652,168
- Issue date Jul 29, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive layer connection structure of a semiconductor device and...
- Patent number 5,534,730
- Issue date Jul 9, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Kenichi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PN junction trench isolation type semiconductor device
- Patent number 5,525,821
- Issue date Jun 11, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Masana Harada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device having first and second ty...
- Patent number 5,478,761
- Issue date Dec 26, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with retrograde wells
- Patent number 5,478,759
- Issue date Dec 26, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Tomoharu Mametani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for pretreating semiconductor substrate by photochemically r...
- Patent number 5,470,799
- Issue date Nov 28, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Hiromi Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor integrated circuit having isolation...
- Patent number 5,466,623
- Issue date Nov 14, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for element isolation and manufacturing method...
- Patent number 5,457,339
- Issue date Oct 10, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro MIS type FET and manufacturing process therefor
- Patent number 5,448,093
- Issue date Sep 5, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a sidewall contact
- Patent number 5,427,972
- Issue date Jun 27, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved element isolation and operation...
- Patent number 5,412,237
- Issue date May 2, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a thin film on surface of semiconductor substrate
- Patent number 5,407,867
- Issue date Apr 18, 1995
- Mitsubishki Denki Kabushiki Kaisha
- Masanobu Iwasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,401,671
- Issue date Mar 28, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process for a micro MIS type FET
- Patent number 5,330,923
- Issue date Jul 19, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion well isolation
- Patent number 5,293,060
- Issue date Mar 8, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making DRAM cell having improved radiation protection
- Patent number 5,268,321
- Issue date Dec 7, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a MOS type field effect transistor using an...
- Patent number 5,258,319
- Issue date Nov 2, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahide Inuishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for semiconductor memory device having stacked...
- Patent number 5,258,321
- Issue date Nov 2, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor memory device having stacked...
- Patent number 5,250,458
- Issue date Oct 5, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Katsuhiro Tsukamoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Lightly doped MISFET with reduced latchup and punchthrough
- Patent number 5,208,473
- Issue date May 4, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro MIS type FET and manufacturing process therefor
- Patent number 5,196,908
- Issue date Mar 23, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Kusunoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a thin layer on a semiconductor substrate and ap...
- Patent number 5,178,682
- Issue date Jan 12, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Katsuhiro Tsukamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for forming a thin film on surface of semiconductor subst...
- Patent number 5,174,881
- Issue date Dec 29, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Masanobu Iwasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor field effect device having channel stop and channel r...
- Patent number 5,141,882
- Issue date Aug 25, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having first and second type field effect tran...
- Patent number 5,138,420
- Issue date Aug 11, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Shigeki Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a side wall contact with reactive ion etching
- Patent number 5,087,588
- Issue date Feb 11, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit having oxide regions with differen...
- Patent number 5,061,654
- Issue date Oct 29, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Shimizu
- H01 - BASIC ELECTRIC ELEMENTS

Katsuhiro Tsukamoto

Person

Patents Grantslast 30 patents

Peripheral structure of a chip as a semiconductor device, and manuf...

Semiconductor wafer and device structure

Semiconductor memory device and method for making the same

Method of forming a semiconductor device having a capacitor with im...

Conductive layer connection structure of a semiconductor device and...

PN junction trench isolation type semiconductor device

Method of producing semiconductor device having first and second ty...

Method of manufacturing semiconductor device with retrograde wells

Method for pretreating semiconductor substrate by photochemically r...

Method of making semiconductor integrated circuit having isolation...

Semiconductor device for element isolation and manufacturing method...

Micro MIS type FET and manufacturing process therefor

Method of making a sidewall contact

Semiconductor device with improved element isolation and operation...

Method of forming a thin film on surface of semiconductor substrate

Method of manufacturing a semiconductor device

Manufacturing process for a micro MIS type FET

Semiconductor device with diffusion well isolation

Method of making DRAM cell having improved radiation protection

Method of manufacturing a MOS type field effect transistor using an...

Manufacturing method for semiconductor memory device having stacked...

Method for manufacturing semiconductor memory device having stacked...

Lightly doped MISFET with reduced latchup and punchthrough

Micro MIS type FET and manufacturing process therefor

Method for forming a thin layer on a semiconductor substrate and ap...

Apparatus for forming a thin film on surface of semiconductor subst...

Semiconductor field effect device having channel stop and channel r...

Semiconductor device having first and second type field effect tran...

Method of making a side wall contact with reactive ion etching

Semiconductor integrated circuit having oxide regions with differen...