Katsuki Furukawa

Person

Sakai-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor laser device and fabrication method thereof
- Patent number 6,888,867
- Issue date May 3, 2005
- Sharp Kabushiki Kaisha
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including an InGaAIN layer
- Patent number 6,635,901
- Issue date Oct 21, 2003
- Sharp Kabushiki Kaisha
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride compound semiconductor device and method for fabricat...
- Patent number 5,804,839
- Issue date Sep 8, 1998
- Sharp Kabushiki Kaisha
- Daisuke Hanaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching method for a gallium nitride type compound semiconductor
- Patent number 5,693,180
- Issue date Dec 2, 1997
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon-carbide single crystals by sublimation...
- Patent number 5,433,167
- Issue date Jul 18, 1995
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting diode
- Patent number 5,387,804
- Issue date Feb 7, 1995
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode
- Patent number 5,329,141
- Issue date Jul 12, 1994
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 5,319,220
- Issue date Jun 7, 1994
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a silicon carbide single crystal
- Patent number 5,288,365
- Issue date Feb 22, 1994
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the growth of silicon carbide single crystals
- Patent number 5,279,701
- Issue date Jan 18, 1994
- Sharp Kabushiki Kaisha
- Mitsuhiro Shigeta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS...
- Patent number 5,272,107
- Issue date Dec 21, 1993
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide light emitting diode and a method for the same
- Patent number 5,243,204
- Issue date Sep 7, 1993
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of SiC single crystals by using a specifi...
- Patent number 5,230,768
- Issue date Jul 27, 1993
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Schottky barrier gate type field effect transistor
- Patent number 5,229,625
- Issue date Jul 20, 1993
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOS type field-effect transistor with at least one...
- Patent number 5,216,264
- Issue date Jun 1, 1993
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 5,184,199
- Issue date Feb 2, 1993
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide field-effect transistor with improved breakdown vol...
- Patent number 5,170,231
- Issue date Dec 8, 1992
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide FETS
- Patent number 5,135,885
- Issue date Aug 4, 1992
- Sharp Corporation
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device with ohmic electrode consistin...
- Patent number 5,124,779
- Issue date Jun 23, 1992
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide light emitting diode having a pn junction
- Patent number 5,063,421
- Issue date Nov 5, 1991
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS structure photosensor
- Patent number 5,049,950
- Issue date Sep 17, 1991
- Sharp Kabushiki Kaisha
- Yoshihisa Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a single-crystal substrate of silicon carbide
- Patent number 5,037,502
- Issue date Aug 6, 1991
- Sharp Kabushiki Kaisha
- Akira Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon carbide semiconductor device
- Patent number 5,030,580
- Issue date Jul 9, 1991
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structure for silicon carbide semiconductors
- Patent number 4,990,994
- Issue date Feb 5, 1991
- Sharp Kabushiki Kaisha
- Katsuki Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing a SiC semiconductor device
- Patent number 4,966,860
- Issue date Oct 30, 1990
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating single-crystal substrates of silicon carbide
- Patent number 4,897,149
- Issue date Jan 30, 1990
- Sharp Kabushiki Kaisha
- Akira Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 4,897,710
- Issue date Jan 30, 1990
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial growth of SiC on Si
- Patent number 4,865,659
- Issue date Sep 12, 1989
- Sharp Kabushiki Kaisha
- Mitsuhiro Shigeta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a SiC semiconductor device
- Patent number 4,762,806
- Issue date Aug 9, 1988
- Sharp Kabushiki Kaisha
- Akira Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating single-crystal substrates of silicon carbide
- Patent number 4,623,425
- Issue date Nov 18, 1986
- Sharp Kabushiki Kaisha
- Akira Suzuki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor laser device and fabrication method thereof
- Publication number 20030031219
- Publication date Feb 13, 2003
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof, and fabricatio...
- Publication number 20020074561
- Publication date Jun 20, 2002
- Nobuhiko Sawaki
- H01 - BASIC ELECTRIC ELEMENTS

Katsuki Furukawa

Person

Patents Grantslast 30 patents

Semiconductor laser device and fabrication method thereof

Semiconductor device including an InGaAIN layer

III-V nitride compound semiconductor device and method for fabricat...

Dry etching method for a gallium nitride type compound semiconductor

Method of producing silicon-carbide single crystals by sublimation...

Light emitting diode

Light emitting diode

Silicon carbide semiconductor device

Method for growing a silicon carbide single crystal

Method for the growth of silicon carbide single crystals

Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS...

Silicon carbide light emitting diode and a method for the same

Method for the production of SiC single crystals by using a specifi...

Schottky barrier gate type field effect transistor

Silicon carbide MOS type field-effect transistor with at least one...

Silicon carbide semiconductor device

Silicon carbide field-effect transistor with improved breakdown vol...

Method of manufacturing silicon carbide FETS

Silicon carbide semiconductor device with ohmic electrode consistin...

Silicon carbide light emitting diode having a pn junction

MIS structure photosensor

Process for producing a single-crystal substrate of silicon carbide

Method for producing a silicon carbide semiconductor device

Electrode structure for silicon carbide semiconductors

Process for producing a SiC semiconductor device

Method of fabricating single-crystal substrates of silicon carbide

Semiconductor device

Heteroepitaxial growth of SiC on Si

Process for producing a SiC semiconductor device

Method of fabricating single-crystal substrates of silicon carbide

Patents Applicationslast 30 patents

Semiconductor laser device and fabrication method thereof

Semiconductor device and fabrication method thereof, and fabricatio...