Katsumi Ogiue

Person

Nishitama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device
- Patent number 5,512,497
- Issue date Apr 30, 1996
- Hitachi, Ltd.
- Takahide Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor IC device having a RAM interposed between different l...
- Patent number 5,477,067
- Issue date Dec 19, 1995
- Hitachi, Ltd.
- Satoru Isomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 5,371,713
- Issue date Dec 6, 1994
- Hitachi, Ltd.
- Katsumi Ogiue
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with two variable delay lin...
- Patent number 5,367,490
- Issue date Nov 22, 1994
- Hitachi, Ltd.
- Kazuhiro Akimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor integrated circuit device
- Patent number 5,354,699
- Issue date Oct 11, 1994
- Hitachi, Ltd.
- Takahide Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 5,311,482
- Issue date May 10, 1994
- Hitachi, Ltd.
- Katsumi Ogiue
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device having a gate array with a...
- Patent number 5,243,208
- Issue date Sep 7, 1993
- Hitachi, Ltd.
- Satoru Isomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit with bipolar transistors and MOSFETs
- Patent number 5,220,187
- Issue date Jun 15, 1993
- Hitachi, Ltd.
- Shuuichi Miyaoka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor integrated circuit device forming on a common substra...
- Patent number 5,214,302
- Issue date May 25, 1993
- Hitachi, Ltd.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with constant width de...
- Patent number 5,200,348
- Issue date Apr 6, 1993
- Hatachi, Ltd.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device having bipolar memory, and...
- Patent number 5,177,584
- Issue date Jan 5, 1993
- Hitachi, Ltd.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with isolation grooves and...
- Patent number 5,128,740
- Issue date Jul 7, 1992
- Hitachi, Ltd.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory system for use in logic LSI's
- Patent number 5,117,390
- Issue date May 26, 1992
- Hitachi, Ltd.
- Kazuhiro Akimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device having a gate array with a...
- Patent number 5,103,282
- Issue date Apr 7, 1992
- Hitachi, Ltd.
- Satoru Isomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor substrate, and semiconductor...
- Patent number 5,084,402
- Issue date Jan 28, 1992
- Hitachi, Ind.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 5,057,894
- Issue date Oct 15, 1991
- Hitachi, Ltd.
- Takahide Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 5,042,010
- Issue date Aug 20, 1991
- Hitachi, Ltd.
- Katsumi Ogiue
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory system for use in logic LSI's
- Patent number 5,023,835
- Issue date Jun 11, 1991
- Hitachi, Ltd.
- Kazuhiro Akimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device for a ram disposed on chip so as to minimize d...
- Patent number 5,014,242
- Issue date May 7, 1991
- Hitachi, Ltd.
- Kazuhiro Akimoto
- G11 - INFORMATION STORAGE
Information Patent Grant
High speed bipolar-MOS logic circuit including a series coupled arr...
- Patent number 4,977,338
- Issue date Dec 11, 1990
- Hitachi, Ltd.
- Shuuichi Miyaoka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 4,959,704
- Issue date Sep 25, 1990
- Hitachi, Ltd.
- Satoru Isomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit with dummy pedestals
- Patent number 4,949,162
- Issue date Aug 14, 1990
- Hitachi, Ltd.
- Yoichi Tamaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 4,924,439
- Issue date May 8, 1990
- Hitachi, Ltd.
- Katsumi Ogiue
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor body, and device formed therefrom, having grooves wit...
- Patent number 4,907,063
- Issue date Mar 6, 1990
- Hitachi, Ltd.
- Daisuke Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 4,858,189
- Issue date Aug 15, 1989
- Hitachi, Ltd.
- Katsumi Ogiue
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a semiconductor integrated circuit device ha...
- Patent number 4,853,343
- Issue date Aug 1, 1989
- Hitachi, Ltd.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 4,809,052
- Issue date Feb 28, 1989
- Hitachi, Ltd.
- Yasushiro Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
MOS/bipolar device with stepped buried layer under active regions
- Patent number 4,799,098
- Issue date Jan 17, 1989
- Hitachi, Ltd.
- Takahide Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation regions formed by locos followed with groove etch and refill
- Patent number 4,746,963
- Issue date May 24, 1988
- Hitachi, Ltd.
- Akihisa Uchida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit
- Patent number 4,713,796
- Issue date Dec 15, 1987
- Hitachi, Ltd.
- Katsumi Ogiue
- G11 - INFORMATION STORAGE

Katsumi Ogiue

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor integrated circuit device

Semiconductor IC device having a RAM interposed between different l...

Semiconductor integrated circuit

Semiconductor integrated circuit device with two variable delay lin...

Method of manufacturing semiconductor integrated circuit device

Semiconductor integrated circuit

Semiconductor integrated circuit device having a gate array with a...

Semiconductor integrated circuit with bipolar transistors and MOSFETs

Semiconductor integrated circuit device forming on a common substra...

Method of manufacturing semiconductor device with constant width de...

Semiconductor integrated circuit device having bipolar memory, and...

Semiconductor integrated circuit device with isolation grooves and...

Semiconductor memory system for use in logic LSI's

Semiconductor integrated circuit device having a gate array with a...

Method of fabricating a semiconductor substrate, and semiconductor...

Semiconductor integrated circuit device

Semiconductor integrated circuit

Semiconductor memory system for use in logic LSI's

Semiconductor device for a ram disposed on chip so as to minimize d...

High speed bipolar-MOS logic circuit including a series coupled arr...

Semiconductor integrated circuit device

Semiconductor integrated circuit with dummy pedestals

Semiconductor integrated circuit

Semiconductor body, and device formed therefrom, having grooves wit...

Semiconductor integrated circuit

Method for fabricating a semiconductor integrated circuit device ha...

Semiconductor memory device

MOS/bipolar device with stepped buried layer under active regions

Isolation regions formed by locos followed with groove etch and refill

Semiconductor integrated circuit