Katsunori Asano

Person

Osaka-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure, semiconductor device, and method for produ...
- Patent number 9,496,345
- Issue date Nov 15, 2016
- National Institute of Advanced Industrial Science and Technology
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,257
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,737
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,960,738
- Issue date Jun 14, 2011
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 7,768,017
- Issue date Aug 3, 2010
- The Kansai Electric Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-controlled semiconductor device
- Patent number 7,626,232
- Issue date Dec 1, 2009
- The Kansai Electric Power Co., Inc.
- Katsunori Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverter apparatus comprising switching elements
- Patent number 7,570,502
- Issue date Aug 4, 2009
- The Kansai Electric Power Co., Inc.
- Yoshitaka Sugawara
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Vertical field-effect semiconductor device with buried gate region
- Patent number 6,600,192
- Issue date Jul 29, 2003
- The Kansai Electric Power Co., Inc.
- Yoshitaka Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device
- Patent number 6,342,709
- Issue date Jan 29, 2002
- The Kansai Electric Power Co., Inc.
- Yoshitaka Sugawara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...
- Publication number 20150214306
- Publication date Jul 30, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100258816
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Joji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100258817
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20100261333
- Publication date Oct 14, 2010
- The Kansai Electric Power Co., Inc.
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PN DIODE, ELECTRIC CIRCUIT DEVICE AND POWER CONVERSION DEVICE
- Publication number 20100182813
- Publication date Jul 22, 2010
- Katsunori Asano
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHOD FOR MEASURING TEMPERATURE OF SEMICONDUCTOR DEVICE AND APPARA...
- Publication number 20100150202
- Publication date Jun 17, 2010
- Katsunori Asano
- G01 - MEASURING TESTING
Information Patent Application
Snubber Circuit and Power Semiconductor Device Having Snubber Circuit
- Publication number 20080043500
- Publication date Feb 21, 2008
- Katsunori Asano
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High Withstand Voltage Semiconductor Device Covered with Resin and...
- Publication number 20070262472
- Publication date Nov 15, 2007
- Shinichi Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage-controlled semiconductor device
- Publication number 20070200150
- Publication date Aug 30, 2007
- Katsunori Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate turn-off thyristor
- Publication number 20070120145
- Publication date May 31, 2007
- Katsunori Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide semiconductor device and manufacturing method therefor
- Publication number 20070090370
- Publication date Apr 26, 2007
- Koji Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inverter apparatus
- Publication number 20060245223
- Publication date Nov 2, 2006
- Yoshitaka Sugawara
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Katsunori Asano

Person

Patents Grantslast 30 patents

Semiconductor structure, semiconductor device, and method for produ...

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Voltage-controlled semiconductor device

Inverter apparatus comprising switching elements

Vertical field-effect semiconductor device with buried gate region

Insulated gate semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

PN DIODE, ELECTRIC CIRCUIT DEVICE AND POWER CONVERSION DEVICE

METHOD FOR MEASURING TEMPERATURE OF SEMICONDUCTOR DEVICE AND APPARA...

Snubber Circuit and Power Semiconductor Device Having Snubber Circuit

High Withstand Voltage Semiconductor Device Covered with Resin and...

Voltage-controlled semiconductor device

Gate turn-off thyristor

Silicon carbide semiconductor device and manufacturing method therefor

Inverter apparatus