Katsunori Danno

Person

Shizuoka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing semiconductor element
- Patent number 11,152,225
- Issue date Oct 19, 2021
- Toyota Jidosha Kabushiki Kaisha
- Toshimasa Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching element and method of manufacturing the same
- Patent number 10,546,933
- Issue date Jan 28, 2020
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal and production method thereof
- Patent number 10,428,440
- Issue date Oct 1, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide single crystal in a solution p...
- Patent number 10,260,167
- Issue date Apr 16, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,145,025
- Issue date Dec 4, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 10,119,199
- Issue date Nov 6, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuaki Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method for producing same
- Patent number 10,094,044
- Issue date Oct 9, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal and method of producing same
- Patent number 10,094,041
- Issue date Oct 9, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing sic single crystal having low defects by solut...
- Patent number 10,087,549
- Issue date Oct 2, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,982,365
- Issue date May 29, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC substrate
- Patent number 9,951,441
- Issue date Apr 24, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SiC single crystal
- Patent number 9,777,399
- Issue date Oct 3, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single-crystal ingot, SiC single crystal, and production method...
- Patent number 9,732,436
- Issue date Aug 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of production of sic single crystal
- Patent number 9,587,327
- Issue date Mar 7, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing N-type SiC single crystal by solution grow...
- Patent number 9,512,540
- Issue date Dec 6, 2016
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gettering process for producing semiconductor device
- Patent number 9,508,802
- Issue date Nov 29, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of production of SiC semiconductor device
- Patent number 9,190,482
- Issue date Nov 17, 2015
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230014283
- Publication date Jan 19, 2023
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220320270
- Publication date Oct 6, 2022
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RARE EARTH MAGNET AND MANUFACTURING METHOD THEREFOR
- Publication number 20220139601
- Publication date May 5, 2022
- Toyota Jidosha Kabushiki Kaisha
- Noritsugu SAKUMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
- Publication number 20210327722
- Publication date Oct 21, 2021
- Toyota Jidosha Kabushiki Kaisha
- Toshimasa HARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20190148497
- Publication date May 16, 2019
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112328
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20180112329
- Publication date Apr 26, 2018
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuaki SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20180100247
- Publication date Apr 12, 2018
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20170167049
- Publication date Jun 15, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
- Publication number 20160230309
- Publication date Aug 11, 2016
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SUBSTRATE
- Publication number 20160160384
- Publication date Jun 9, 2016
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160122901
- Publication date May 5, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20160090664
- Publication date Mar 31, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method...
- Publication number 20150191849
- Publication date Jul 9, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Takayuki Shirai
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20150136016
- Publication date May 21, 2015
- Toyota Jidosha Kabushiki Kaisha
- Katsunori DANNO
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF
- Publication number 20150128847
- Publication date May 14, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20150064882
- Publication date Mar 5, 2015
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC SINGLE CRYSTAL AND METHOD OF PRODUCING SAME
- Publication number 20140127466
- Publication date May 8, 2014
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL
- Publication number 20130220212
- Publication date Aug 29, 2013
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCTION OF SIC SEMICONDUCTOR DEVICE
- Publication number 20130059429
- Publication date Mar 7, 2013
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
- Publication number 20130042802
- Publication date Feb 21, 2013
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
- Publication number 20120118221
- Publication date May 17, 2012
- Katsunori Danno
- C30 - CRYSTAL GROWTH

Katsunori Danno

Person

Patents Grantslast 30 patents

Method for producing semiconductor element

Switching element and method of manufacturing the same

SiC single crystal and production method thereof

Method for producing silicon carbide single crystal in a solution p...

Method for producing SiC single crystal

Method for producing SiC single crystal

SiC single crystal and method for producing same

SiC single crystal and method of producing same

Method for producing sic single crystal having low defects by solut...

Method for producing SiC single crystal

Method for producing SiC substrate

Method for producing SiC single crystal

SiC single-crystal ingot, SiC single crystal, and production method...

Method of production of sic single crystal

Method for manufacturing N-type SiC single crystal by solution grow...

Gettering process for producing semiconductor device

Method of production of SiC semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

RARE EARTH MAGNET AND MANUFACTURING METHOD THEREFOR

METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME

METHOD FOR PRODUCING SiC SUBSTRATE

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SiC Single-Crystal Ingot, SiC Single Crystal, and Production Method...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF

PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SIC SINGLE CRYSTAL AND METHOD OF PRODUCING SAME

METHOD FOR MANUFACTURING N-TYPE SiC SINGLE CRYSTAL

METHOD OF PRODUCTION OF SIC SEMICONDUCTOR DEVICE

METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL

METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL