Katsunori Ishihara

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Yokohama, JP

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Patents Grantslast 30 patents

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Semiconductor device having insulation film whose breakdown voltage...
- Patent number 6,163,050
- Issue date Dec 19, 2000
- Kabushiki Kaisha Toshiba
- Kiyoshi Hisatomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having insulation film whose breakdown voltage...
- Patent number 5,714,399
- Issue date Feb 3, 1998
- Kabushiki Kaisha Toshiba
- Kiyoshi Hisatomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making doped semiconductor film having uniform impurity c...
- Patent number 5,702,529
- Issue date Dec 30, 1997
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a silicon semiconductor device using doping durin...
- Patent number 5,612,236
- Issue date Mar 18, 1997
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making doped semiconductor film having uniform impurity c...
- Patent number 5,250,463
- Issue date Oct 5, 1993
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 5,237,196
- Issue date Aug 17, 1993
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS