Katsunori Nishii

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a semiconductor device
- Patent number 7,585,706
- Issue date Sep 8, 2009
- Panasonic Corporation
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device for reducing a surfac...
- Patent number 7,449,399
- Issue date Nov 11, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,307,292
- Issue date Dec 11, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including exposing a...
- Patent number 7,122,451
- Issue date Oct 17, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride compound semiconductor device having schottky contact
- Patent number 7,105,907
- Issue date Sep 12, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshito Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,037,817
- Issue date May 2, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,933,181
- Issue date Aug 23, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,924,516
- Issue date Aug 2, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,852,612
- Issue date Feb 8, 2005
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,812,505
- Issue date Nov 2, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Palladium silicide (PdSi) schottky electrode for gallium nitride se...
- Patent number 6,809,352
- Issue date Oct 26, 2004
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,774,449
- Issue date Aug 10, 2004
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device composed of a group III-V nitride semiconductor
- Patent number 6,770,922
- Issue date Aug 3, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device composed of a group III-V nitride semiconductor
- Patent number 6,737,683
- Issue date May 18, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 6,653,714
- Issue date Nov 25, 2003
- Matsushita Electronics Corp.
- Toshinobu Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based HFET having a surface-leakage reducing cap layer
- Patent number 6,639,255
- Issue date Oct 28, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,593,193
- Issue date Jul 15, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,531,718
- Issue date Mar 11, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor and method for producing the same
- Patent number 6,503,808
- Issue date Jan 7, 2003
- Matsushita Electronics Corporation
- Toshinobu Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for fabricating the same
- Patent number 6,323,538
- Issue date Nov 27, 2001
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,153,499
- Issue date Nov 28, 2000
- Matsushita Electric Industrial Co., Ltd.
- Yoshiharu Anda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,942,772
- Issue date Aug 24, 1999
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF semiconductor device and a method for manufacturing the same
- Patent number 5,872,393
- Issue date Feb 16, 1999
- Matsushita Electric Industrial Co., Ltd.
- Hiroyuki Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of manufacturing the same
- Patent number 5,585,655
- Issue date Dec 17, 1996
- Matsushita Electric Industrial Co., Ltd.
- Yorito Ota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a fine structure electrode
- Patent number 5,370,973
- Issue date Dec 6, 1994
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20080038856
- Publication date Feb 14, 2008
- Matsushita Electronics Corporation
- Katsunori NISHII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device of Group III nitride semiconductor having oxid...
- Publication number 20070194295
- Publication date Aug 23, 2007
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070020896
- Publication date Jan 25, 2007
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20050001234
- Publication date Jan 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kaoru INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040238860
- Publication date Dec 2, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO.,LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040175853
- Publication date Sep 9, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20040137761
- Publication date Jul 15, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20040113158
- Publication date Jun 17, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru INOUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride compound semiconductor device having schottky contact
- Publication number 20040061194
- Publication date Apr 1, 2004
- Yoshito Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030222276
- Publication date Dec 4, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030209762
- Publication date Nov 13, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an active region formed from group III...
- Publication number 20030205721
- Publication date Nov 6, 2003
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030160265
- Publication date Aug 28, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030160269
- Publication date Aug 28, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030107101
- Publication date Jun 12, 2003
- Matsushita Electric Industrial Co., Ltd.
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030109088
- Publication date Jun 12, 2003
- Matsushita Electronics Corporation
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral bipolar transistor and method for producing the same
- Publication number 20030096478
- Publication date May 22, 2003
- Toshinobu Matsuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020119610
- Publication date Aug 29, 2002
- Katsunori Nishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and method for fabricating the same
- Publication number 20020022330
- Publication date Feb 21, 2002
- Takeshi Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010020700
- Publication date Sep 13, 2001
- kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20010015446
- Publication date Aug 23, 2001
- kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS

Katsunori Nishii

Person

Patents Grantslast 30 patents

Method of fabricating a semiconductor device

Method for fabricating a semiconductor device for reducing a surfac...

Semiconductor device and method for fabricating the same

Method for fabricating a semiconductor device including exposing a...

Gallium nitride compound semiconductor device having schottky contact

Semiconductor device and method for fabricating the same

Method for fabricating semiconductor device

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device

Palladium silicide (PdSi) schottky electrode for gallium nitride se...

Semiconductor device and method for fabricating the same

Semiconductor device composed of a group III-V nitride semiconductor

Semiconductor device composed of a group III-V nitride semiconductor

Lateral bipolar transistor

GaN-based HFET having a surface-leakage reducing cap layer

Semiconductor device and method for fabricating the same

Semiconductor device

Lateral bipolar transistor and method for producing the same

Bipolar transistor and method for fabricating the same

Method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

RF semiconductor device and a method for manufacturing the same

Field-effect transistor and method of manufacturing the same

Method of fabricating a fine structure electrode

Patents Applicationslast 30 patents

Semiconductor device and method of fabricating the same

Semiconductor device of Group III nitride semiconductor having oxid...

Semiconductor device and method for fabricating the same

SEMICONDUCTOR DEVICE

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for fabricating semiconductor device

SEMICONDUCTOR DEVICE

Gallium nitride compound semiconductor device having schottky contact

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device having an active region formed from group III...

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Lateral bipolar transistor and method for producing the same

Semiconductor device and method for fabricating the same

Bipolar transistor and method for fabricating the same

Semiconductor device

Semiconductor device