Kazumasa Kiyomi

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing group-III nitride semiconductor crystal, group...
- Patent number 9,112,096
- Issue date Aug 18, 2015
- Mitsubishi Chemical Corporation
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride semiconductor crystal, group...
- Patent number 8,269,251
- Issue date Sep 18, 2012
- Mitsubishi Chemical Corporation
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Ga-containing nitride semiconductor single cry...
- Patent number 8,142,566
- Issue date Mar 27, 2012
- Mitsubishi Chemical Corporation
- Kazumasa Kiyomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride-based material and method of manufacturing the same
- Patent number 7,794,541
- Issue date Sep 14, 2010
- Tohoku University
- Hiroyuki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical device apparatus
- Patent number 6,807,213
- Issue date Oct 19, 2004
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,744,066
- Issue date Jun 1, 2004
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,707,071
- Issue date Mar 16, 2004
- Mitsubishi Chemical Corporation
- Makiko Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,589,807
- Issue date Jul 8, 2003
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method for th...
- Patent number 6,387,721
- Issue date May 14, 2002
- Mitsubishi Chemical Corporation
- Makiko Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,265,733
- Issue date Jul 24, 2001
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP...
- Publication number 20130320394
- Publication date Dec 5, 2013
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP...
- Publication number 20120305983
- Publication date Dec 6, 2012
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF
- Publication number 20120112320
- Publication date May 10, 2012
- MITSUBISHI CHEMICAL CORPORATION
- Shuichi KUBO
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100162945
- Publication date Jul 1, 2010
- TOHOKU UNIVERSITY
- Hiroyuki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP...
- Publication number 20100148212
- Publication date Jun 17, 2010
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE-BASED MATERIAL
- Publication number 20100140536
- Publication date Jun 10, 2010
- TOHOKU UNIVERSITY
- Hiroyuki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090081110
- Publication date Mar 26, 2009
- TOHOKU UNIVERSITY
- Hiroyuki Shibata
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR MATERIAL AND PRODUCTION PROCESS OF NITRIDE SE...
- Publication number 20090026488
- Publication date Jan 29, 2009
- MITSUBISHI CHEMICAL CORPORATION
- Kazumasa Kiyomi
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga-Containing Nitride Semiconductor Single Crystal, Production Meth...
- Publication number 20080308812
- Publication date Dec 18, 2008
- MITSUBISHI CHEMICAL CORPORATION
- Kazumasa Kiyomi
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor light-emitting device
- Publication number 20020125488
- Publication date Sep 12, 2002
- Mitsubishi Chemical Corporation
- Makiko Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20020014622
- Publication date Feb 7, 2002
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20010040236
- Publication date Nov 15, 2001
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY

Kazumasa Kiyomi

Person

Patents Grantslast 30 patents

Method for producing group-III nitride semiconductor crystal, group...

Method for producing group III nitride semiconductor crystal, group...

Method for producing Ga-containing nitride semiconductor single cry...

Gallium nitride-based material and method of manufacturing the same

Semiconductor optical device apparatus

Semiconductor device and method for manufacturing the same

Semiconductor light-emitting device

Semiconductor device and method for manufacturing the same

Semiconductor light-emitting device and manufacturing method for th...

Semiconductor device and method for manufacturing the same

Patents Applicationslast 30 patents

METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP...

METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP...

NITRIDE SEMICONDUCTOR CRYSTAL AND PRODUCTION PROCESS THEREOF

GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL, GROUP...

GALLIUM NITRIDE-BASED MATERIAL

GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR MATERIAL AND PRODUCTION PROCESS OF NITRIDE SE...

Ga-Containing Nitride Semiconductor Single Crystal, Production Meth...

Semiconductor light-emitting device

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same