Kazuo Watanuki

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of making a semiconductor device of a high withstand voltage
- Patent number 5,223,442
- Issue date Jun 29, 1993
- Kabushiki Kaisha Toshiba
- Mitsuhiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compression contacted semiconductor device and method for making of...
- Patent number 5,210,601
- Issue date May 11, 1993
- Kabushiki Kaisha Toshiba
- Mitsuhiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device of a high withstand voltage
- Patent number 5,156,981
- Issue date Oct 20, 1992
- Kabushiki Kaisha Toshiba
- Mitsuhiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device with anode shortening structure
- Patent number 5,028,974
- Issue date Jul 2, 1991
- Kabushiki Kaisha Toshiba
- Mituhiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crimp-type semiconductor device having non-alloy structure
- Patent number 4,996,586
- Issue date Feb 26, 1991
- Kabushiki Kaisha Toshiba
- Hideo Matsuda
- H01 - BASIC ELECTRIC ELEMENTS