Kazutaka Yoshizawa

Person

Kuwana, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with reduced word line switch area
- Patent number 12,032,837
- Issue date Jul 9, 2024
- SANDISK TECHNOLOGIES LLC
- Yuki Mizutani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Static random access memory cell employing n-doped PFET gate electr...
- Patent number 11,088,152
- Issue date Aug 10, 2021
- SanDisk Technologies LLC
- Hiroshi Nakatsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 10,748,919
- Issue date Aug 18, 2020
- SANDISK TECHNOLOGY LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory cell employing n-doped PFET gate electr...
- Patent number 10,714,486
- Issue date Jul 14, 2020
- SanDisk Technologies LLC
- Hiroshi Nakatsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors having different stress control liners and...
- Patent number 10,355,100
- Issue date Jul 16, 2019
- SanDisk Technologies LLC
- Yu Ueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing hydrogen diffusion barri...
- Patent number 10,290,645
- Issue date May 14, 2019
- SanDisk Technologies LLC
- Hiroshi Nakatsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-tier three-dimensional memory devices containing annular diel...
- Patent number 9,991,280
- Issue date Jun 5, 2018
- SanDisk Technologies LLC
- Tadashi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of word line switches with word line contact via struct...
- Patent number 9,595,535
- Issue date Mar 14, 2017
- SanDisk Technologies LLC
- Hiroyuki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Select gates with select gate dielectric first
- Patent number 9,443,862
- Issue date Sep 13, 2016
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile storage having oxide/nitride sidewall
- Patent number 9,281,314
- Issue date Mar 8, 2016
- SanDisk Technologies Inc.
- Takashi Kashimura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040217
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PERIPHERAL CIRCUIT WITH...
- Publication number 20240373639
- Publication date Nov 7, 2024
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Ryo KAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240153994
- Publication date May 9, 2024
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240147730
- Publication date May 2, 2024
- SANDISK TECHNOLOGIES LLC
- Kiyokazu SHISHIDO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED WORD LINE SWITCH AREA
- Publication number 20240111440
- Publication date Apr 4, 2024
- SANDISK TECHNOLOGIES LLC
- Yuki Mizutani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240072042
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Hokuto KODATE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...
- Publication number 20240063062
- Publication date Feb 22, 2024
- SANDISK TECHNOLOGIES LLC
- Kouta ONOGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY ARRAY WITH DUAL-LEVEL PERIPHERAL CIRCUITS...
- Publication number 20240032299
- Publication date Jan 25, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...
- Publication number 20220109070
- Publication date Apr 7, 2022
- SANDISK TECHNOLOGIES LLC
- Junko ONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY CELL EMPLOYING N-DOPED PFET GATE ELECTR...
- Publication number 20200295012
- Publication date Sep 17, 2020
- SANDISK TECHNOLOGIES LLC
- Hiroshi NAKATSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STATIC RANDOM ACCESS MEMORY CELL EMPLOYING N-DOPED PFET GATE ELECTR...
- Publication number 20200091157
- Publication date Mar 19, 2020
- SANDISK TECHNOLOGIES LLC
- Hiroshi NAKATSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BARRI...
- Publication number 20190006381
- Publication date Jan 3, 2019
- SanDisk Technologies LLC
- Hiroshi NAKATSUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...
- Publication number 20180277566
- Publication date Sep 27, 2018
- SANDISK TECHNOLOGIES LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...
- Publication number 20170236835
- Publication date Aug 17, 2017
- SanDisk Technologies LLC
- Tadashi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS

Kazutaka Yoshizawa

Person

Patents Grantslast 30 patents

Non-volatile memory with reduced word line switch area

Static random access memory cell employing n-doped PFET gate electr...

Multi-tier three-dimensional memory devices containing annular diel...

Static random access memory cell employing n-doped PFET gate electr...

Field effect transistors having different stress control liners and...

Three-dimensional memory device containing hydrogen diffusion barri...

Multi-tier three-dimensional memory devices containing annular diel...

Integration of word line switches with word line contact via struct...

Select gates with select gate dielectric first

Non-volatile storage having oxide/nitride sidewall

Patents Applicationslast 30 patents

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PERIPHERAL CIRCUIT WITH...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

NON-VOLATILE MEMORY WITH REDUCED WORD LINE SWITCH AREA

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

FIELD EFFECT TRANSISTOR WITH CONTACT VIA STRUCTURES THAT ARE LATERA...

THREE-DIMENSIONAL MEMORY ARRAY WITH DUAL-LEVEL PERIPHERAL CIRCUITS...

HIGH VOLTAGE FIELD EFFECT TRANSISTOR WITH VERTICAL CURRENT PATHS AN...

STATIC RANDOM ACCESS MEMORY CELL EMPLOYING N-DOPED PFET GATE ELECTR...

STATIC RANDOM ACCESS MEMORY CELL EMPLOYING N-DOPED PFET GATE ELECTR...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BARRI...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...

MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICES CONTAINING ANNULAR DIEL...