Kazuto IKEDA

Person

Ome-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,893,508
- Issue date Feb 22, 2011
- Fujitsu Semiconductor Limited
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing an insulating film containing hafnium
- Patent number 7,838,439
- Issue date Nov 23, 2010
- Semiconductor Technology Academic Research Center
- Masaharu Oshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,521,325
- Issue date Apr 21, 2009
- Fujitsu Microelectronics Limited
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 7,396,715
- Issue date Jul 8, 2008
- Fujitsu Limited
- Kazuto Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high dielectric constant gate insulatin...
- Patent number 7,265,401
- Issue date Sep 4, 2007
- Fujitsu Limited
- Masaomi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having silicide layer
- Patent number 7,011,734
- Issue date Mar 14, 2006
- Fujitsu Limited
- Kazuto Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for chemical vapor deposition of superconductive oxide
- Patent number 4,931,425
- Issue date Jun 5, 1990
- Fujitsu Limited
- Takafumi Kimura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
STATE EVALUATION APPARATUS OF SECONDARY BATTERY, STATE EVALUATION M...
- Publication number 20140095092
- Publication date Apr 3, 2014
- Fujitsu Limited
- Kazuto IKEDA
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20100022080
- Publication date Jan 28, 2010
- Fujitsu Microelectronics Limited
- Sekikin Sho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING AN INSULATING FILM CONTAINING HAFNIUM
- Publication number 20090004886
- Publication date Jan 1, 2009
- Masaharu OSHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070232004
- Publication date Oct 4, 2007
- FUJITSU LIMITED
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20060220143
- Publication date Oct 5, 2006
- FUJITSU LIMITED
- Kazuto Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20060214243
- Publication date Sep 28, 2006
- FUJITSU LIMITED
- Tsunehisa Sakoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having high dielectric constant gate insulatin...
- Publication number 20060172498
- Publication date Aug 3, 2006
- FUJITSU LIMITED
- Masaomi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device having silicide layer
- Publication number 20040092123
- Publication date May 13, 2004
- FUJITSU LIMITED
- Kazuto Ikeda
- H01 - BASIC ELECTRIC ELEMENTS

Kazuto IKEDA

Person

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Method of manufacturing an insulating film containing hafnium

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method of the same

Semiconductor device having high dielectric constant gate insulatin...

Method of manufacturing semiconductor device having silicide layer

Process for chemical vapor deposition of superconductive oxide

Patents Applicationslast 30 patents

STATE EVALUATION APPARATUS OF SECONDARY BATTERY, STATE EVALUATION M...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING AN INSULATING FILM CONTAINING HAFNIUM

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method of the same

Semiconductor device and method for fabricating the same

Semiconductor device having high dielectric constant gate insulatin...

Method of manufacturing semiconductor device having silicide layer