Kazuya Nakayama

Person

Sagamihara-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 8,008,715
- Issue date Aug 30, 2011
- Kabushiki Kaisha Toshiba
- Yusuke Kawaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-breakdown-voltage semiconductor apparatus
- Patent number RE40712
- Issue date May 19, 2009
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- 257 - Active solid-state devices
Information Patent Grant
High-breakdown-voltage semiconductor apparatus
- Patent number RE40705
- Issue date May 5, 2009
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- 257 - Active solid-state devices
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,341,900
- Issue date Mar 11, 2008
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,034,346
- Issue date Apr 25, 2006
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,019,361
- Issue date Mar 28, 2006
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 6,958,514
- Issue date Oct 25, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron emission film and field emission cold cathode device
- Patent number 6,469,425
- Issue date Oct 22, 2002
- Kabushiki Kaisha Toshiba
- Tadashi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron emitting device and switching circuit using the same
- Patent number 6,323,831
- Issue date Nov 27, 2001
- Kabushiki Kaisha Toshiba
- Tomio Ono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cold-cathode power switching device of field-emission type
- Patent number 6,297,586
- Issue date Oct 2, 2001
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate thyristor
- Patent number 6,236,069
- Issue date May 22, 2001
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro power switch using a cold cathode and a driving method thereof
- Patent number 6,057,636
- Issue date May 2, 2000
- Kabushiki Kaisha Toshiba
- Tadashi Sakai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High-breakdown-voltage semiconductor apparatus
- Patent number 6,040,598
- Issue date Mar 21, 2000
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate thyristor
- Patent number 5,793,065
- Issue date Aug 11, 1998
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 5,703,383
- Issue date Dec 30, 1997
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 5,554,862
- Issue date Sep 10, 1996
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate thyristor
- Patent number 5,464,994
- Issue date Nov 7, 1995
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating thyristor with insulated gates
- Patent number 5,463,231
- Issue date Oct 31, 1995
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating thyristor with insulated gates
- Patent number 5,428,228
- Issue date Jun 27, 1995
- Kabushiki Kaisha Toshiba
- Tsuneo Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated-gate thyristor
- Patent number 5,381,026
- Issue date Jan 10, 1995
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090032875
- Publication date Feb 5, 2009
- Kabushiki Kaisha Toshiba
- Yusuke KAWAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080035992
- Publication date Feb 14, 2008
- Kabushiki Kaisha Toshiba
- Yusuke KAWAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20050258503
- Publication date Nov 24, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20050121718
- Publication date Jun 9, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20040046202
- Publication date Mar 11, 2004
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20040007766
- Publication date Jan 15, 2004
- Kabushiki Kaisha Toshiba
- Kazuya Nakayama
- H01 - BASIC ELECTRIC ELEMENTS

Kazuya Nakayama

Person

Patents Grantslast 30 patents

Semiconductor device

High-breakdown-voltage semiconductor apparatus

High-breakdown-voltage semiconductor apparatus

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Electron emission film and field emission cold cathode device

Electron emitting device and switching circuit using the same

Cold-cathode power switching device of field-emission type

Insulated-gate thyristor

Micro power switch using a cold cathode and a driving method thereof

High-breakdown-voltage semiconductor apparatus

Insulated-gate thyristor

Power semiconductor device

Power semiconductor device

Insulated-gate thyristor

Method of operating thyristor with insulated gates

Method of operating thyristor with insulated gates

Insulated-gate thyristor

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Semiconductor device and method for manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method for manufacturing the same