Kazuya NISHIHORI

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
High frequency transistor
- Patent number 11,715,796
- Issue date Aug 1, 2023
- Kabushiki Kaisha Toshiba
- Mitsutoshi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switch
- Patent number 10,347,655
- Issue date Jul 9, 2019
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,768,268
- Issue date Sep 19, 2017
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for measuring impurity concentration profile, wafer used for...
- Patent number 8,674,357
- Issue date Mar 18, 2014
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction type compound semiconductor field effect transistor...
- Patent number 6,936,870
- Issue date Aug 30, 2005
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency power amplifier and mobile communication device usin...
- Patent number 6,134,424
- Issue date Oct 17, 2000
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Manufacturing method of compound semiconductor field effect transistor
- Patent number 6,114,195
- Issue date Sep 5, 2000
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MMIC semiconductor device with WN.sub.x capacitor electrode
- Patent number 5,929,473
- Issue date Jul 27, 1999
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide capacitor with a WN.sub.X electrode
- Patent number 5,670,808
- Issue date Sep 23, 1997
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal semiconductor device and method for producing the same
- Patent number 5,273,937
- Issue date Dec 28, 1993
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH
- Publication number 20240321773
- Publication date Sep 26, 2024
- Kabushiki Kaisha Toshiba
- Kazuya NISHIHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105796
- Publication date Mar 28, 2024
- Kabushiki Kaisha Toshiba
- Mitsutoshi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240096876
- Publication date Mar 21, 2024
- Kabushiki Kaisha Toshiba
- Takahiro NAKAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230290876
- Publication date Sep 14, 2023
- Kabushiki Kaisha Toshiba
- Mitsutoshi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH FREQUENCY TRANSISTOR
- Publication number 20220293791
- Publication date Sep 15, 2022
- Kabushiki Kaisha Toshiba
- Mitsutoshi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCH
- Publication number 20170213848
- Publication date Jul 27, 2017
- Kabushiki Kaisha Toshiba
- Kazuya NISHIHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160204213
- Publication date Jul 14, 2016
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MEASURING IMPURITY CONCENTRATION PROFILE, WAFER USED FOR...
- Publication number 20130161617
- Publication date Jun 27, 2013
- Kabushiki Kaisha Toshiba
- Kazuya NISHIHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MEASURING IMPURITY CONCENTRATION PROFILE, WAFER USED FOR...
- Publication number 20120138924
- Publication date Jun 7, 2012
- Kabushiki Kaisha Toshiba
- Kazuya NISHIHORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction type compound semiconductor field effect transistor...
- Publication number 20040164317
- Publication date Aug 26, 2004
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS

Kazuya NISHIHORI

Person

Patents Grantslast 30 patents

High frequency transistor

Semiconductor switch

Semiconductor device

Method for measuring impurity concentration profile, wafer used for...

Heterojunction type compound semiconductor field effect transistor...

High-frequency power amplifier and mobile communication device usin...

Manufacturing method of compound semiconductor field effect transistor

MMIC semiconductor device with WN.sub.x capacitor electrode

Metal oxide capacitor with a WN.sub.X electrode

Metal semiconductor device and method for producing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND HIGH FREQUENCY SWITCH

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

HIGH FREQUENCY TRANSISTOR

SEMICONDUCTOR SWITCH

SEMICONDUCTOR DEVICE

METHOD FOR MEASURING IMPURITY CONCENTRATION PROFILE, WAFER USED FOR...

METHOD FOR MEASURING IMPURITY CONCENTRATION PROFILE, WAFER USED FOR...

Heterojunction type compound semiconductor field effect transistor...