Kazuyoshi Shinada

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor device including nonvolatile...
- Patent number 7,115,471
- Issue date Oct 3, 2006
- Kabushiki Kaisha Toshiba
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having E.sup.2 PROM and EPROM in one chip
- Patent number 5,200,636
- Issue date Apr 6, 1993
- Kabushiki Kaisha Toshiba
- Teruo Uemura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having a non-volatile...
- Patent number 5,094,967
- Issue date Mar 10, 1992
- Kabushiki Kaisha Toshiba
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a complementary MOS type semiconductor device
- Patent number 4,743,564
- Issue date May 10, 1988
- Kabushiki Kaisha Toshiba
- Masaki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor device
- Patent number 4,597,824
- Issue date Jul 1, 1986
- Kabushiki Kaisha Toshiba
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SiO.sub.2 -Si interface for floating gate s...
- Patent number 4,597,159
- Issue date Jul 1, 1986
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a bipolar transistor
- Patent number 4,504,332
- Issue date Mar 12, 1985
- Vlsi Technology Research Association
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device utilizing selective m...
- Patent number 4,412,378
- Issue date Nov 1, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device using laser beam cryst...
- Patent number 4,377,902
- Issue date Mar 29, 1983
- VLSI Technology Research Association
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming Schottky-I.sup.2 L devices by implantation and la...
- Patent number 4,338,139
- Issue date Jul 6, 1982
- Vlsi Technology Research Association
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of manufacturing semiconductor device including nonvolatile...
- Publication number 20050136597
- Publication date Jun 23, 2005
- Kabushiki Kaisha Toshiba
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS

Kazuyoshi Shinada

Person

Patents Grantslast 30 patents

Method of manufacturing semiconductor device including nonvolatile...

Semiconductor device having E.sup.2 PROM and EPROM in one chip

Method for manufacturing semiconductor device having a non-volatile...

Method for manufacturing a complementary MOS type semiconductor device

Method of producing semiconductor device

Method of manufacturing SiO.sub.2 -Si interface for floating gate s...

Method of making a bipolar transistor

Method for manufacturing semiconductor device utilizing selective m...

Method of manufacturing semiconductor device using laser beam cryst...

Method of forming Schottky-I.sup.2 L devices by implantation and la...

Patents Applicationslast 30 patents

Method of manufacturing semiconductor device including nonvolatile...