Kazuyoshi Tomita

Person

Nagoya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 10,381,469
- Issue date Aug 13, 2019
- Denso Corporation
- Yoshinori Tsuchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high electron mobility transistor
- Patent number 9,818,856
- Issue date Nov 14, 2017
- Denso Corporation
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered substrate with a miscut angle comprising a silicon single c...
- Patent number 9,728,609
- Issue date Aug 8, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Tetsuo Narita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method of manufacturing a support layer
- Patent number 9,536,996
- Issue date Jan 3, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Hirofumi Funabashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor device and method for producing the same
- Patent number 8,420,502
- Issue date Apr 16, 2013
- Toyoda Gosei Co., Ltd.
- Masanobu Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode and Group III nitride-based compound semiconductor light-...
- Patent number 7,646,036
- Issue date Jan 12, 2010
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Takahiro Kozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light source
- Patent number 7,342,364
- Issue date Mar 11, 2008
- Toyoda Gosei Co., Ltd.
- Satoru Kato
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for manufacturing group-III nitride compound semiconductor,...
- Patent number 7,163,876
- Issue date Jan 16, 2007
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for semiconductor crystal and semiconductor lumin...
- Patent number 7,052,979
- Issue date May 30, 2006
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for semiconductor substrate and semiconductor ele...
- Patent number 7,011,707
- Issue date Mar 14, 2006
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing semiconductor crystal
- Patent number 6,964,705
- Issue date Nov 15, 2005
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of III nitride compound semiconductor, and III ni...
- Patent number 6,844,246
- Issue date Jan 18, 2005
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor element and method for pro...
- Patent number 6,716,655
- Issue date Apr 6, 2004
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor light-emitting element
- Patent number 6,649,943
- Issue date Nov 18, 2003
- Toyoda Gosei Co., Ltd.
- Naoki Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor laser diodes
- Patent number 5,889,806
- Issue date Mar 30, 1999
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Layered semiconductor laser having solder laminations and method of...
- Patent number 5,604,761
- Issue date Feb 18, 1997
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160372587
- Publication date Dec 22, 2016
- Denso Corporation
- Yoshinori TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160043066
- Publication date Feb 11, 2016
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Hirofumi FUNABASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED SUBSTRATE WITH A MISCUT ANGLE COMPRISING A SILICON SINGLE C...
- Publication number 20150053996
- Publication date Feb 26, 2015
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Tetsuo Narita
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20140231874
- Publication date Aug 21, 2014
- Denso Corporation
- Shinichi Hoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V semiconductor device and method for producing the same
- Publication number 20100151612
- Publication date Jun 17, 2010
- Toyoda Gosei Co., Ltd.
- Masanobu Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Semiconductor device and method for producing the same
- Publication number 20080237629
- Publication date Oct 2, 2008
- TOYODA GOSEI, CO., LTD.
- Masanobu Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode and group III nitride-based compound semiconductor light-...
- Publication number 20080185609
- Publication date Aug 7, 2008
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Takahiro KOZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light source
- Publication number 20060061302
- Publication date Mar 23, 2006
- TOYODA GOSEI CO., LTD
- Satoru Kato
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Semiconductor laser and method for producing the same
- Publication number 20050220157
- Publication date Oct 6, 2005
- Toyoda Gosei Co., Ltd.
- Ryo Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for manufacturing group-III nitride compound semiconductor,...
- Publication number 20040219702
- Publication date Nov 4, 2004
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method for semiconductor crystal and semiconductor lumin...
- Publication number 20040123796
- Publication date Jul 1, 2004
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for semiconductor substrate and semiconductor ele...
- Publication number 20040115937
- Publication date Jun 17, 2004
- Seiji Nagai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Production method of III nitride compound semiconductor, and III ni...
- Publication number 20040087115
- Publication date May 6, 2004
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor crystal growing method and semiconductor light-emitti...
- Publication number 20040077166
- Publication date Apr 22, 2004
- Seiji Nagal
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing semiconductor crystal
- Publication number 20040016396
- Publication date Jan 29, 2004
- TOYODA GOSEI CO., LTD
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III nitride compound semiconductor light-emitting element
- Publication number 20030001170
- Publication date Jan 2, 2003
- Naoki Shibata
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III nitride compound semiconductor element and method for pro...
- Publication number 20020197841
- Publication date Dec 26, 2002
- Seiji Nagai
- C30 - CRYSTAL GROWTH

Kazuyoshi Tomita

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device with high electron mobility transistor

Layered substrate with a miscut angle comprising a silicon single c...

Apparatus and method of manufacturing a support layer

Group III-V semiconductor device and method for producing the same

Electrode and Group III nitride-based compound semiconductor light-...

Light source

Method for manufacturing group-III nitride compound semiconductor,...

Production method for semiconductor crystal and semiconductor lumin...

Production method for semiconductor substrate and semiconductor ele...

Method for producing semiconductor crystal

Production method of III nitride compound semiconductor, and III ni...

Group III nitride compound semiconductor element and method for pro...

Group III nitride compound semiconductor light-emitting element

Group III nitride compound semiconductor laser diodes

Layered semiconductor laser having solder laminations and method of...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

APPARATUS AND METHOD OF MANUFACTURING THE SAME

LAYERED SUBSTRATE WITH A MISCUT ANGLE COMPRISING A SILICON SINGLE C...

SEMICONDUCTOR DEVICE

Group III-V semiconductor device and method for producing the same

Group III-V Semiconductor device and method for producing the same

Electrode and group III nitride-based compound semiconductor light-...

Light source

Semiconductor laser and method for producing the same

Method for manufacturing group-III nitride compound semiconductor,...

Production method for semiconductor crystal and semiconductor lumin...

Production method for semiconductor substrate and semiconductor ele...

Production method of III nitride compound semiconductor, and III ni...

Semiconductor crystal growing method and semiconductor light-emitti...

Method for producing semiconductor crystal

Group III nitride compound semiconductor light-emitting element

Group III nitride compound semiconductor element and method for pro...