Kazuyuki IIZUKA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Light emitting device
- Patent number 10,975,497
- Issue date Apr 13, 2021
- Tamura Corporation
- Mikihiko Uwani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing β-GA2O3-based single crystal
- Patent number 10,526,721
- Issue date Jan 7, 2020
- KOHA CO., LTD.
- Shinya Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
β-Ga2O3 single-crystal substrate
- Patent number 10,196,756
- Issue date Feb 5, 2019
- Tamura Corporation
- Shinya Watanabe
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for growing B-Ga2O3-based single crystal
- Patent number 9,926,646
- Issue date Mar 27, 2018
- Tamura Corporation
- Shinya Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing β-Ga2O3-based single crystal
- Patent number 9,903,045
- Issue date Feb 27, 2018
- Tamura Corporation
- Shinya Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor stacked body, method for manufacturing same, and semi...
- Patent number 9,153,648
- Issue date Oct 6, 2015
- Tamura Corporation
- Shinkuro Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystal layered structure and method for manufacturing same, and se...
- Patent number 9,059,077
- Issue date Jun 16, 2015
- Tamura Corporation
- Kazuyuki Iizuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Light emitting element including center electrode and thin wire ele...
- Patent number 8,237,180
- Issue date Aug 7, 2012
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element
- Patent number 8,120,051
- Issue date Feb 21, 2012
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting element
- Patent number 8,120,046
- Issue date Feb 21, 2012
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 8,071,992
- Issue date Dec 6, 2011
- Hitachi Cable, Ltd.
- Nobuaki Kitano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting device and method for fabricating the same including...
- Patent number 7,884,381
- Issue date Feb 8, 2011
- Hitachi Cable, Ltd.
- Masahiro Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device
- Patent number 7,692,203
- Issue date Apr 6, 2010
- Hitachi Cable, Ltd.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with transparent conductive film
- Patent number 7,608,859
- Issue date Oct 27, 2009
- Hitachi Cable, Ltd.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 7,569,866
- Issue date Aug 4, 2009
- Hitachi Cable, Ltd.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device with high brightness and low op...
- Patent number 7,535,026
- Issue date May 19, 2009
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element
- Patent number 7,449,722
- Issue date Nov 11, 2008
- Hitachi Cable, Ltd.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device
- Patent number 7,368,759
- Issue date May 6, 2008
- Hitachi Cable, Ltd.
- Masahiro Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride semiconductor crystal, and nitride sem...
- Patent number 7,294,200
- Issue date Nov 13, 2007
- Hitachi Cable, Ltd.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor light emitting device
- Patent number 7,230,281
- Issue date Jun 12, 2007
- Hitachi Cable, Ltd.
- Masahiro Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride semiconductor, semiconductor wafer and...
- Patent number 6,989,287
- Issue date Jan 24, 2006
- Hitachi Cable, Ltd.
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Operation control apparatus for recovery boilers
- Patent number 4,768,469
- Issue date Sep 6, 1988
- Kabushiki Kaisha Toshiba
- Kazuyuki IIzuka
- F23 - COMBUSTION APPARATUS COMBUSTION PROCESSES

Patents Applicationslast 30 patents

Information Patent Application
INFRARED LED ELEMENT
- Publication number 20240258457
- Publication date Aug 1, 2024
- Ushio Denki Kabushiki Kaisha
- Kazuyuki IIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INFRARED LED ELEMENT
- Publication number 20230327052
- Publication date Oct 12, 2023
- Ushio Denki Kabushiki Kaisha
- Kazuyuki IIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICE
- Publication number 20200200347
- Publication date Jun 25, 2020
- TAMURA CORPORATION
- Mikihiko UWANI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180033907
- Publication date Feb 1, 2018
- TAMURA CORPORATION
- Yoshikatsu MORISHIMA
- C30 - CRYSTAL GROWTH
Information Patent Application
BETA-Ga2O3 SINGLE-CRYSTAL SUBSTRATE
- Publication number 20170152610
- Publication date Jun 1, 2017
- TAMURA CORPORATION
- Shinya WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL
- Publication number 20160032485
- Publication date Feb 4, 2016
- KOHA CO., LTD.
- Shinya WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT
- Publication number 20150364646
- Publication date Dec 17, 2015
- TAMURA CORPORATION
- Yoshikatsu MORISHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING B-Ga2O3 SINGLE CRYSTAL
- Publication number 20150308012
- Publication date Oct 29, 2015
- TAMURA CORPORATION
- Shinya WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT
- Publication number 20150155356
- Publication date Jun 4, 2015
- TAMURA CORPORATIO9N
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SE...
- Publication number 20140231830
- Publication date Aug 21, 2014
- TAMURA CORPORATION
- Kazuyuki Iizuka
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMI...
- Publication number 20140048823
- Publication date Feb 20, 2014
- Koha Co., Ltd.
- Shinkuro Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LAMINATE AND PROCESS FOR PRODUCTION THEREOF, AND SEMI...
- Publication number 20140027770
- Publication date Jan 30, 2014
- Kazuyuki Iizuka
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor light emitting element
- Publication number 20100301362
- Publication date Dec 2, 2010
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting element
- Publication number 20100207146
- Publication date Aug 19, 2010
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light-emitting element
- Publication number 20100078659
- Publication date Apr 1, 2010
- Hitachi Cable, Ltd.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Light emitting device and method for fabricating the same
- Publication number 20100065869
- Publication date Mar 18, 2010
- Hitachi Cable, Ltd.
- Masahiro Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20090206354
- Publication date Aug 20, 2009
- Hitachi Cable, Ltd.
- Nobuaki Kitano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light emitting device
- Publication number 20080093612
- Publication date Apr 24, 2008
- Hitachi Cable, Ltd.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device with transparent conductive film
- Publication number 20070075319
- Publication date Apr 5, 2007
- HITACHI CABLE, LTD.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20070075328
- Publication date Apr 5, 2007
- HITACHI CABLE, LTD.
- Kazuyuki Iizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20070075321
- Publication date Apr 5, 2007
- HITACHI CABLE, LTD.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20070075327
- Publication date Apr 5, 2007
- HITACHI CABLE, LTD.
- Masahiro Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light emitting element
- Publication number 20070023768
- Publication date Feb 1, 2007
- Hitachi Cable, Ltd.
- Taichiroo Konno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light emitting device
- Publication number 20060220032
- Publication date Oct 5, 2006
- Hitachi Cable, Ltd.
- Masahiro Arai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing nitride semiconductor, semiconductor wafer and...
- Publication number 20050042789
- Publication date Feb 24, 2005
- HITACHI CABLE, LTD.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing nitride semiconductor crystal, and nitride sem...
- Publication number 20030183160
- Publication date Oct 2, 2003
- HITACHI CABLE, LTD.
- Hajime Fujikura
- C30 - CRYSTAL GROWTH

Kazuyuki IIZUKA

Person

Patents Grantslast 30 patents

Light emitting device

Method for growing β-GA2O3-based single crystal

β-Ga2O3 single-crystal substrate

Method for growing B-Ga2O3-based single crystal

Method for growing β-Ga2O3-based single crystal

Semiconductor stacked body, method for manufacturing same, and semi...

Crystal layered structure and method for manufacturing same, and se...

Light emitting element including center electrode and thin wire ele...

Semiconductor light emitting element

Light-emitting element

Semiconductor light-emitting device

Light emitting device and method for fabricating the same including...

Semiconductor light emitting device

Semiconductor light-emitting device with transparent conductive film

Semiconductor light-emitting device

Semiconductor light-emitting device with high brightness and low op...

Semiconductor light emitting element

Semiconductor light-emitting device

Method for producing nitride semiconductor crystal, and nitride sem...

Semiconductor light emitting device

Method for producing nitride semiconductor, semiconductor wafer and...

Operation control apparatus for recovery boilers

Patents Applicationslast 30 patents

INFRARED LED ELEMENT

INFRARED LED ELEMENT

LIGHT EMITTING DEVICE

NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD FOR MANUFACTURING SAME

BETA-Ga2O3 SINGLE-CRYSTAL SUBSTRATE

METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL

CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT

METHOD FOR GROWING B-Ga2O3 SINGLE CRYSTAL

SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT

CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SE...

SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMI...

SEMICONDUCTOR LAMINATE AND PROCESS FOR PRODUCTION THEREOF, AND SEMI...

Semiconductor light emitting element

Light emitting element

Light-emitting element

Light emitting device and method for fabricating the same

Semiconductor light-emitting device

Semiconductor light emitting device

Semiconductor light-emitting device with transparent conductive film

Semiconductor light-emitting device

Semiconductor light-emitting device

Semiconductor light-emitting device

Semiconductor light emitting element

Semiconductor light emitting device

Method for producing nitride semiconductor, semiconductor wafer and...

Method for producing nitride semiconductor crystal, and nitride sem...