Kei-Yu Ko

Person

Meridian, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Etching methods
- Patent number 7,470,628
- Issue date Dec 30, 2008
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant with selectivity for doped silicon dioxide over undoped sil...
- Patent number 7,319,075
- Issue date Jan 15, 2008
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas compositions
- Patent number 7,273,566
- Issue date Sep 25, 2007
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a substrate an undoped silicon oxide st...
- Patent number 7,173,339
- Issue date Feb 6, 2007
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching methods and methods of forming memory devices compri...
- Patent number 7,094,700
- Issue date Aug 22, 2006
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant gas composition
- Patent number 6,989,108
- Issue date Jan 24, 2006
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack structure
- Patent number 6,967,408
- Issue date Nov 22, 2005
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant with selectivity for doped silicon dioxide over undoped sil...
- Patent number 6,875,371
- Issue date Apr 5, 2005
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undoped silicon dioxide as etch stop for selective etch of doped si...
- Patent number 6,849,557
- Issue date Feb 1, 2005
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching methods and methods of forming memory devices compri...
- Patent number 6,831,019
- Issue date Dec 14, 2004
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process variation resistant self aligned contact etch
- Patent number 6,716,766
- Issue date Apr 6, 2004
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undoped silicon dioxide as etch mask for patterning of doped silico...
- Patent number 6,551,940
- Issue date Apr 22, 2003
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant with selectivity for doped silicon dioxide over undoped sil...
- Patent number 6,537,922
- Issue date Mar 25, 2003
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a plurality of gate stacks
- Patent number 6,479,864
- Issue date Nov 12, 2002
- Micron Technology Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self-aligned contact opening
- Patent number 6,458,685
- Issue date Oct 1, 2002
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching doped silicon dioxide with selectivity to undoped...
- Patent number 6,444,586
- Issue date Sep 3, 2002
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a self aligned contact opening
- Patent number 6,432,833
- Issue date Aug 13, 2002
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact (SAC) etch with dual-chemistry process
- Patent number 6,337,285
- Issue date Jan 8, 2002
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching doped silicon dioxide with selectivity to undoped...
- Patent number 6,277,758
- Issue date Aug 21, 2001
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a substrate, an undoped silicon oxide s...
- Patent number 6,121,671
- Issue date Sep 19, 2000
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor etching methods
- Patent number 6,117,788
- Issue date Sep 12, 2000
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etchant with selectivity for doped silicon dioxide over undoped sil...
- Patent number 6,117,791
- Issue date Sep 12, 2000
- Micron Technology, Inc.
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Gas compositions
- Publication number 20060011579
- Publication date Jan 19, 2006
- Kei-Yu Ko
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Etching methods
- Publication number 20050218373
- Publication date Oct 6, 2005
- Kei-Yu Ko
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Etch-processing apparatus
- Publication number 20050211672
- Publication date Sep 29, 2005
- Kei-Yu Ko
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Plasma etching methods and methods of forming memory devices compri...
- Publication number 20050054207
- Publication date Mar 10, 2005
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS VARIATION RESISTANT SELF ALIGNED CONTACT ETCH
- Publication number 20040038546
- Publication date Feb 26, 2004
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Etchant with selectivity for doped silicon dioxide over undoped sil...
- Publication number 20030203639
- Publication date Oct 30, 2003
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHANT GAS COMPOSITION
- Publication number 20030042465
- Publication date Mar 6, 2003
- Micron Technology, Inc.
- Kei-yu Ko
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Method of etching doped silicon dioxide with selectivity to undoped...
- Publication number 20010053609
- Publication date Dec 20, 2001
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a self-aligned contact opening
- Publication number 20010029097
- Publication date Oct 11, 2001
- Kei-Yu Ko
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Etching methods

Etchant with selectivity for doped silicon dioxide over undoped sil...

Gas compositions

Semiconductor device having a substrate an undoped silicon oxide st...

Plasma etching methods and methods of forming memory devices compri...

Etchant gas composition

Gate stack structure

Etchant with selectivity for doped silicon dioxide over undoped sil...

Undoped silicon dioxide as etch stop for selective etch of doped si...

Plasma etching methods and methods of forming memory devices compri...

Process variation resistant self aligned contact etch

Undoped silicon dioxide as etch mask for patterning of doped silico...

Etchant with selectivity for doped silicon dioxide over undoped sil...

Semiconductor structure having a plurality of gate stacks

Method of forming a self-aligned contact opening

Method of etching doped silicon dioxide with selectivity to undoped...

Method of forming a self aligned contact opening

Self-aligned contact (SAC) etch with dual-chemistry process

Method of etching doped silicon dioxide with selectivity to undoped...

Semiconductor device having a substrate, an undoped silicon oxide s...

Semiconductor etching methods

Etchant with selectivity for doped silicon dioxide over undoped sil...

Patents Applicationslast 30 patents

Gas compositions

Etching methods

Etch-processing apparatus

Plasma etching methods and methods of forming memory devices compri...

PROCESS VARIATION RESISTANT SELF ALIGNED CONTACT ETCH

Etchant with selectivity for doped silicon dioxide over undoped sil...

ETCHANT GAS COMPOSITION

Method of etching doped silicon dioxide with selectivity to undoped...

Method of forming a self-aligned contact opening