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Keizo Hirayama
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Ichikawa, JP
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last 30 patents
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Patent Grant
High breakdown voltage semiconductor device
Patent number
6,133,617
Issue date
Oct 17, 2000
Kabushiki Kaisha Toshiba
Keizo Hirayama
H01 - BASIC ELECTRIC ELEMENTS
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Patent Grant
High breakdown voltage semiconductor device
Patent number
5,982,015
Issue date
Nov 9, 1999
Kabushiki Kaisha Toshiba
Keizo Hirayama
H01 - BASIC ELECTRIC ELEMENTS