Ken Kawamura

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
MOS transistor with high breakdown voltage
- Patent number 5,191,401
- Issue date Mar 2, 1993
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,108,944
- Issue date Apr 28, 1992
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved withstanding voltage character...
- Patent number 5,075,754
- Issue date Dec 24, 1991
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,008,724
- Issue date Apr 16, 1991
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device IC with DMOS using self-aligned back gate region
- Patent number 4,878,096
- Issue date Oct 31, 1989
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 4,707,720
- Issue date Nov 17, 1987
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS