Kenji Maeguchi

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a metal silicide layer connecting two s...
- Patent number 5,061,983
- Issue date Oct 29, 1991
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 4,619,037
- Issue date Oct 28, 1986
- Kabushiki Kaisha Toshiba
- Shinji Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 4,564,583
- Issue date Jan 14, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Maeguchi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of manufacturing a MOSFET using accelerated ions to form an...
- Patent number 4,498,224
- Issue date Feb 12, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Maeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having contacting but electrically isolated se...
- Patent number 4,491,856
- Issue date Jan 1, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Hideharu Egawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device on insulating substrate by...
- Patent number 4,463,492
- Issue date Aug 7, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Maeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOS p--n Junction device with a thick oxide wiring insulation layer
- Patent number 4,447,823
- Issue date May 8, 1984
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Maeguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of silicon on sapphire structure having FETs w...
- Patent number 4,395,726
- Issue date Jul 26, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kenji Maeguchi
- H01 - BASIC ELECTRIC ELEMENTS

Kenji Maeguchi

Person

Patents Grantslast 30 patents

Semiconductor device having a metal silicide layer connecting two s...

Method of manufacturing a semiconductor device

Method for manufacturing a semiconductor device

Method of manufacturing a MOSFET using accelerated ions to form an...

Semiconductor device having contacting but electrically isolated se...

Method of forming a semiconductor device on insulating substrate by...

SOS p--n Junction device with a thick oxide wiring insulation layer

Semiconductor device of silicon on sapphire structure having FETs w...