Kent Kuohua Chang

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Flash memory device and a method of fabrication thereof
- Patent number 6,979,619
- Issue date Dec 27, 2005
- Advanced Micro Devices, Inc.
- Hao Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for improved performance of flash memory cell...
- Patent number 6,812,521
- Issue date Nov 2, 2004
- Advanced Micro Devices, Inc.
- Yuesong He
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of reducing program disturbs in NAND type flash memory devices
- Patent number 6,580,639
- Issue date Jun 17, 2003
- Advanced Micro Devices, Inc.
- Yue-Song He
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of in-situ cleaning for LPCVD TEOS pump
- Patent number 6,498,104
- Issue date Dec 24, 2002
- Advanced Micro Devices, Inc.
- Fuodoor Gologhlan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Mesh filter design for LPCVD TEOS exhaust system
- Patent number 6,458,212
- Issue date Oct 1, 2002
- Advanced Micro Devices, Inc.
- Fuodoor Gologhlan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Flash memory device with monitor structure for monitoring second ga...
- Patent number 6,410,949
- Issue date Jun 25, 2002
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ono stacked films and DCS tungsten silicide gate...
- Patent number 6,380,029
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to improve read disturb for NAND flash memory devices
- Patent number 6,380,033
- Issue date Apr 30, 2002
- Advanced Micro Devices, Inc.
- Yue-song He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reduced gate aspect ratio to improve gap-fill after spac...
- Patent number 6,376,309
- Issue date Apr 23, 2002
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield performance semiconductor process flow for NAND flash me...
- Patent number 6,362,049
- Issue date Mar 26, 2002
- Advanced Micro Devices, Inc.
- Salvatore F. Cagnina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Effect of doped amorphous Si thickness on better poly 1 contact res...
- Patent number 6,355,522
- Issue date Mar 12, 2002
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for monitoring second gate over-etch in a semiconductor device
- Patent number 6,323,047
- Issue date Nov 27, 2001
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high K tantalum pentoxide Ta2O5 instead of ONO st...
- Patent number 6,309,927
- Issue date Oct 30, 2001
- Advanced Micro Devices, Inc.
- Kenneth Wo-Wai Au
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reduced gate aspect ration to improve gap-fill after spa...
- Patent number 6,300,658
- Issue date Oct 9, 2001
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to reduce post cycling program VT dispersion for NAND flash...
- Patent number 6,284,602
- Issue date Sep 4, 2001
- Advanced Micro Devices, Inc.
- Yue-song He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process to eliminate ONO fence material in high densi...
- Patent number 6,281,078
- Issue date Aug 28, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin floating gate and conductive select gate in situ doped amorpho...
- Patent number 6,235,586
- Issue date May 22, 2001
- Advanced Micro Devices, Inc.
- Kenneth Wo-Wai Au
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of in-situ cleaning for LPCVD teos pump
- Patent number 6,221,164
- Issue date Apr 24, 2001
- Advanced Micro Devices, Inc.
- Fuodoor Gologhlan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for providing a dopant level for polysilicon for flash memor...
- Patent number 6,218,689
- Issue date Apr 17, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming select gate to improve reliability and performanc...
- Patent number 6,204,159
- Issue date Mar 20, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to elimate silicide cracking for nand type flash memory devi...
- Patent number 6,184,084
- Issue date Feb 6, 2001
- Advanced Micro Devices, Inc.
- David Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming flash memory devices
- Patent number 6,180,454
- Issue date Jan 30, 2001
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing contaminate nitrogen from the peripheral gate r...
- Patent number 6,177,312
- Issue date Jan 23, 2001
- Advanced Micro Devices, Inc.
- Yuesong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post barrier metal contact implantation to minimize out diffusion f...
- Patent number 6,177,316
- Issue date Jan 23, 2001
- Advanced Micro Devices, Inc.
- Yue-Song He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ammonia annealed and wet oxidized LPCVD oxide to replace ono films...
- Patent number 6,162,684
- Issue date Dec 19, 2000
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate engineering to improve tunnel oxide reliability for f...
- Patent number 6,153,470
- Issue date Nov 28, 2000
- Advanced Micro Devices, Inc.
- Yue-Song He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing memory devices
- Patent number 6,146,795
- Issue date Nov 14, 2000
- Advanced Micro Devices, Inc.
- Jiahua Huang
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Barrier layer decreases nitrogen contamination of peripheral gate r...
- Patent number 6,143,608
- Issue date Nov 7, 2000
- Advanced Micro Devices, Inc.
- Yue-Song He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ P doped amorphous silicon by NH3 to form oxidation resistan...
- Patent number 6,140,246
- Issue date Oct 31, 2000
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen ion implanted amorphous silicon to produce oxidation resis...
- Patent number 6,114,230
- Issue date Sep 5, 2000
- Advanced Micro Devices, Inc.
- Kent Kuohua Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING HIGH K TANTALUM PENTOXIDE TA205 INSTEAD OF ONO ST...
- Publication number 20010046738
- Publication date Nov 29, 2001
- KENNETH WO-WAI AU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reduced gate aspect ratio to improve gap-fill after spac...
- Publication number 20010016386
- Publication date Aug 23, 2001
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for contact size control for nand technology
- Publication number 20010006847
- Publication date Jul 5, 2001
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for monitoring second gate over-etch in a semiconductor device
- Publication number 20010005633
- Publication date Jun 28, 2001
- Advanced Micro Devices, Inc.
- John JianShi Wang
- H01 - BASIC ELECTRIC ELEMENTS

Kent Kuohua Chang

Person

Patents Grantslast 30 patents

Flash memory device and a method of fabrication thereof

Method and apparatus for improved performance of flash memory cell...

Method of reducing program disturbs in NAND type flash memory devices

Method of in-situ cleaning for LPCVD TEOS pump

Mesh filter design for LPCVD TEOS exhaust system

Flash memory device with monitor structure for monitoring second ga...

Method of forming ono stacked films and DCS tungsten silicide gate...

Process to improve read disturb for NAND flash memory devices

Method for reduced gate aspect ratio to improve gap-fill after spac...

High yield performance semiconductor process flow for NAND flash me...

Effect of doped amorphous Si thickness on better poly 1 contact res...

Method for monitoring second gate over-etch in a semiconductor device

Method of forming high K tantalum pentoxide Ta2O5 instead of ONO st...

Method for reduced gate aspect ration to improve gap-fill after spa...

Process to reduce post cycling program VT dispersion for NAND flash...

Manufacturing process to eliminate ONO fence material in high densi...

Thin floating gate and conductive select gate in situ doped amorpho...

Method of in-situ cleaning for LPCVD teos pump

Method for providing a dopant level for polysilicon for flash memor...

Method of forming select gate to improve reliability and performanc...

Method to elimate silicide cracking for nand type flash memory devi...

Method for forming flash memory devices

Method for removing contaminate nitrogen from the peripheral gate r...

Post barrier metal contact implantation to minimize out diffusion f...

Ammonia annealed and wet oxidized LPCVD oxide to replace ono films...

Floating gate engineering to improve tunnel oxide reliability for f...

Method for manufacturing memory devices

Barrier layer decreases nitrogen contamination of peripheral gate r...

In-situ P doped amorphous silicon by NH3 to form oxidation resistan...

Nitrogen ion implanted amorphous silicon to produce oxidation resis...

Patents Applicationslast 30 patents

METHOD OF FORMING HIGH K TANTALUM PENTOXIDE TA205 INSTEAD OF ONO ST...

Method for reduced gate aspect ratio to improve gap-fill after spac...

Method for contact size control for nand technology

Method for monitoring second gate over-etch in a semiconductor device