Kentaro Nakajima

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,593,193
- Issue date Sep 22, 2009
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 7,405,087
- Issue date Jul 29, 2008
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic random access memory
- Patent number 7,376,003
- Issue date May 20, 2008
- Kabushiki Kaisha Toshiba
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,345,852
- Issue date Mar 18, 2008
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 7,291,506
- Issue date Nov 6, 2007
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic random access memory
- Patent number 7,209,382
- Issue date Apr 24, 2007
- Kabushiki Kaisha Toshiba
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a magnetoresistance effect device
- Patent number 7,140,096
- Issue date Nov 28, 2006
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory modules with magnetoresistive elements and method of reading...
- Patent number 7,123,539
- Issue date Oct 17, 2006
- Kabushiki Kaisha Toshiba
- Koichi Fujisaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic random access memory
- Patent number 7,050,325
- Issue date May 23, 2006
- Kabushiki Kaisha Toshiba
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 7,038,894
- Issue date May 2, 2006
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device having memory cells including ferromagn...
- Patent number 7,035,137
- Issue date Apr 25, 2006
- Kabushiki Kaisha Toshiba
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic double tunnel junction element with asymmetric energy...
- Patent number 6,995,962
- Issue date Feb 7, 2006
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory device
- Patent number 6,987,653
- Issue date Jan 17, 2006
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device
- Patent number 6,984,867
- Issue date Jan 10, 2006
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 6,965,138
- Issue date Nov 15, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MRAM having SAL layer
- Patent number 6,947,312
- Issue date Sep 20, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory module with magnetoresistive elements and a method of readin...
- Patent number 6,934,196
- Issue date Aug 23, 2005
- Kabushiki Kaisha Toshiba
- Koichi Fujisaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device
- Patent number 6,919,595
- Issue date Jul 19, 2005
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic storage apparatus having dummy magnetoresistive effect ele...
- Patent number 6,916,677
- Issue date Jul 12, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory device and method of manufacturing the same
- Patent number 6,914,284
- Issue date Jul 5, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device using magneto resistive element and met...
- Patent number 6,884,633
- Issue date Apr 26, 2005
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,868,002
- Issue date Mar 15, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferromagnetic double tunnel junction element with asymmetric energy...
- Patent number 6,839,206
- Issue date Jan 4, 2005
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using magneto resistive element and met...
- Patent number 6,828,641
- Issue date Dec 7, 2004
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic storage apparatus having dummy magnetoresistive effect ele...
- Patent number 6,812,511
- Issue date Nov 2, 2004
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device
- Patent number 6,803,619
- Issue date Oct 12, 2004
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory having antiferromagnetically coupled recording layer
- Patent number 6,751,074
- Issue date Jun 15, 2004
- Kabushiki Kaisha Toshiba
- Koichiro Inomata
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect device
- Patent number 6,730,949
- Issue date May 4, 2004
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with reduced write current
- Patent number 6,707,711
- Issue date Mar 16, 2004
- Kabushiki Kaisha Toshiba
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device using magneto resistive element and met...
- Patent number 6,653,703
- Issue date Nov 25, 2003
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM, PROGRAM, AND METHOD
- Publication number 20220148688
- Publication date May 12, 2022
- A&T CORPORATION
- Kentaro NAKAJIMA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20070297101
- Publication date Dec 27, 2007
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20060146451
- Publication date Jul 6, 2006
- KABUSHI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic random access memory
- Publication number 20060092692
- Publication date May 4, 2006
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device and method of manufacturing the same
- Publication number 20050254289
- Publication date Nov 17, 2005
- Kabushiki Kaisha Toshiba
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Memory module and system, an information processing apparatus and a...
- Publication number 20050249029
- Publication date Nov 10, 2005
- Kabushiki Kaisha Toshiba
- Koichi Fujisaki
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Magnetic memory device and method of manufacturing the same
- Publication number 20050208682
- Publication date Sep 22, 2005
- Kentaro Nakajima
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20050185347
- Publication date Aug 25, 2005
- KABUSHI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistance effect device, method of manufacturing the same,...
- Publication number 20050078417
- Publication date Apr 14, 2005
- Kabushiki Kaisha Toshiba
- Tatsuya Kishi
- G11 - INFORMATION STORAGE
Information Patent Application
Ferromagnetic double tunnel junction element with asymmetric energy...
- Publication number 20050078418
- Publication date Apr 14, 2005
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor memory device
- Publication number 20050035385
- Publication date Feb 17, 2005
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor memory device having memory cells including ferromagn...
- Publication number 20050036362
- Publication date Feb 17, 2005
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device and method of manufacturing the same
- Publication number 20050020011
- Publication date Jan 27, 2005
- Kentaro Nakajima
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor memory device using magneto resistive element and met...
- Publication number 20040233763
- Publication date Nov 25, 2004
- Keiji Hosotani
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device and method of manufacturing the same
- Publication number 20040173828
- Publication date Sep 9, 2004
- Kentaro Nakajima
- B82 - NANO-TECHNOLOGY
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20040175596
- Publication date Sep 9, 2004
- KABUSHIKI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic storage apparatus having dummy magnetoresistive effect ele...
- Publication number 20040169214
- Publication date Sep 2, 2004
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM having SAL layer
- Publication number 20040165453
- Publication date Aug 26, 2004
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory
- Publication number 20040156231
- Publication date Aug 12, 2004
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device with divided write wirings
- Publication number 20040109349
- Publication date Jun 10, 2004
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device
- Publication number 20040100832
- Publication date May 27, 2004
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory device using damascene process and manufacturing me...
- Publication number 20040081841
- Publication date Apr 29, 2004
- Kentaro Nakajima
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor memory device
- Publication number 20040047206
- Publication date Mar 11, 2004
- Kabushiki Kaisha Toshiba
- Keiji Hosotani
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor memory device using magneto resistive element and met...
- Publication number 20040047199
- Publication date Mar 11, 2004
- Keiji Hosotani
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory
- Publication number 20040042297
- Publication date Mar 4, 2004
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic random access memory
- Publication number 20040027854
- Publication date Feb 12, 2004
- Yoshihisa Iwata
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic storage apparatus having dummy magnetoresistive effect ele...
- Publication number 20030210586
- Publication date Nov 13, 2003
- Kentaro Nakajima
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element and magnetic memory device
- Publication number 20030197984
- Publication date Oct 23, 2003
- KABUSHIKI KAISHA TOSHIBA
- Koichiro Inomata
- G01 - MEASURING TESTING
Information Patent Application
Magnetic memory
- Publication number 20030137870
- Publication date Jul 24, 2003
- Yoshiaki Saito
- G11 - INFORMATION STORAGE
Information Patent Application
Memory module and system, an information processing apparatus and a...
- Publication number 20030023805
- Publication date Jan 30, 2003
- Koichi Fujisaki
- G06 - COMPUTING CALCULATING COUNTING

Kentaro Nakajima

Person

Patents Grantslast 30 patents

Magnetoresistive element and magnetic memory device

Magnetic memory device and method of manufacturing the same

Magnetic random access memory

Magnetoresistive element and magnetic memory device

Magnetic memory device and method of manufacturing the same

Magnetic random access memory

Method of manufacturing a magnetoresistance effect device

Memory modules with magnetoresistive elements and method of reading...

Magnetic random access memory

Magnetoresistive element and magnetic memory device

Semiconductor memory device having memory cells including ferromagn...

Ferromagnetic double tunnel junction element with asymmetric energy...

Magnetoresistive element and magnetic memory device

Magnetic memory device

Magnetic memory device and method of manufacturing the same

MRAM having SAL layer

Memory module with magnetoresistive elements and a method of readin...

Semiconductor memory device

Magnetic storage apparatus having dummy magnetoresistive effect ele...

Magnetic memory device and method of manufacturing the same

Semiconductor memory device using magneto resistive element and met...

Magnetic memory with reduced write current

Ferromagnetic double tunnel junction element with asymmetric energy...

Semiconductor memory device using magneto resistive element and met...

Magnetic storage apparatus having dummy magnetoresistive effect ele...

Semiconductor memory device

Magnetic memory having antiferromagnetically coupled recording layer

Magnetoresistance effect device

Magnetic memory with reduced write current

Semiconductor memory device using magneto resistive element and met...

Patents Applicationslast 30 patents

SYSTEM, PROGRAM, AND METHOD

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE

Magnetoresistive element and magnetic memory device

Magnetic random access memory

Magnetic memory device and method of manufacturing the same

Memory module and system, an information processing apparatus and a...

Magnetic memory device and method of manufacturing the same

Magnetoresistive element and magnetic memory device

Magnetoresistance effect device, method of manufacturing the same,...

Ferromagnetic double tunnel junction element with asymmetric energy...

Semiconductor memory device

Semiconductor memory device having memory cells including ferromagn...

Magnetic memory device and method of manufacturing the same

Semiconductor memory device using magneto resistive element and met...

Magnetic memory device and method of manufacturing the same

Magnetoresistive element and magnetic memory device

Magnetic storage apparatus having dummy magnetoresistive effect ele...

MRAM having SAL layer

Magnetic memory

Magnetic memory device with divided write wirings

Magnetic memory device

Magnetic memory device using damascene process and manufacturing me...

Semiconductor memory device

Semiconductor memory device using magneto resistive element and met...

Magnetic random access memory

Magnetic random access memory

Magnetic storage apparatus having dummy magnetoresistive effect ele...

Magnetoresistive element and magnetic memory device

Magnetic memory

Memory module and system, an information processing apparatus and a...