Kern Rim

Person

San Diego, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 11,728,428
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) transistors with shallow source/drain regions...
- Patent number 11,545,555
- Issue date Jan 3, 2023
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors (FET) circuits employing topside and backs...
- Patent number 11,437,379
- Issue date Sep 6, 2022
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid conductor integration in power rail
- Patent number 11,302,638
- Issue date Apr 12, 2022
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) transistors with additional bottom channel fo...
- Patent number 11,257,917
- Issue date Feb 22, 2022
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell circuits formed in circuit cells employing offset gate cut are...
- Patent number 11,152,347
- Issue date Oct 19, 2021
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor (FET) comprising channels with silicon germ...
- Patent number 11,145,654
- Issue date Oct 12, 2021
- QUALCOMM Incorporated
- Kwanyong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid metallization interconnects for power distribution and signa...
- Patent number 11,121,075
- Issue date Sep 14, 2021
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shunt power rail with short line effect
- Patent number 11,038,344
- Issue date Jun 15, 2021
- QUALCOMM Incorporated
- John Jianhong Zhu
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 10,892,364
- Issue date Jan 12, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 10,886,385
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset gate contact
- Patent number 10,854,604
- Issue date Dec 1, 2020
- QUALCOMM Incorporated
- ChihWei Kuo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Circuits having a diffusion break with avoided or reduced adjacent...
- Patent number 10,763,364
- Issue date Sep 1, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuits having a diffusion break with avoided or reduced adjacent...
- Patent number 10,700,204
- Issue date Jun 30, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Standard cell architecture with M1 layer unidirectional routing
- Patent number 10,593,700
- Issue date Mar 17, 2020
- QUALCOMM Incorporated
- Mukul Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned quadruple patterning process for Fin pitch below 20nm
- Patent number 10,559,501
- Issue date Feb 11, 2020
- QUALCOMM Incorporated
- Stanley Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated fin with improved fin profile
- Patent number 10,546,955
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits including a FinFET and a nanostructure FET
- Patent number 10,439,039
- Issue date Oct 8, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits employing a field gate(s) without dielectric la...
- Patent number 10,411,091
- Issue date Sep 10, 2019
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 10,347,752
- Issue date Jul 9, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating a gate-all-around (GAA) field-effect transistor(s) (FET...
- Patent number 10,332,881
- Issue date Jun 25, 2019
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout effect mitigation in FinFET
- Patent number 10,181,403
- Issue date Jan 15, 2019
- QUALCOMM Incorporated
- Da Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid coloring methodology for multi-pattern technology
- Patent number 10,175,571
- Issue date Jan 8, 2019
- QUALCOMM Incorporated
- Xiangdong Chen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having an airgap defined at least partially by...
- Patent number 10,163,792
- Issue date Dec 25, 2018
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices employing field effect transistors (FETs) wit...
- Patent number 10,141,305
- Issue date Nov 27, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FET) (FinFET) complementary metal oxid...
- Patent number 10,134,734
- Issue date Nov 20, 2018
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor (FET) (FinFET) complementary metal oxid...
- Patent number 10,090,305
- Issue date Oct 2, 2018
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gap defined therein
- Patent number 10,079,293
- Issue date Sep 18, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having increased channel strain using fin...
- Patent number 10,056,474
- Issue date Aug 21, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor temperature sensing
- Patent number 10,018,515
- Issue date Jul 10, 2018
- QUALCOMM Incorporated
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD-EFFECT TRANSISTORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKS...
- Publication number 20220093594
- Publication date Mar 24, 2022
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE-ALL-AROUND (GAA) TRANSISTORS WITH SHALLOW SOURCE/DRAIN REGIONS...
- Publication number 20220037493
- Publication date Feb 3, 2022
- QUALCOMM Incorporated
- Peijie Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) TRANSISTORS WITH ADDITIONAL BOTTOM CHANNEL FO...
- Publication number 20210384310
- Publication date Dec 9, 2021
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CONDUCTOR INTEGRATION IN POWER RAIL
- Publication number 20210217699
- Publication date Jul 15, 2021
- QUALCOMM Incorporated
- John Jianhong ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR (FET) COMPRISING CHANNELS WITH SILICON GERM...
- Publication number 20210118883
- Publication date Apr 22, 2021
- QUALCOMM Incorporated
- Kwanyong LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...
- Publication number 20200303550
- Publication date Sep 24, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm
- Publication number 20200161189
- Publication date May 21, 2020
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE (MOL) COMPLEMENTARY POWER RAIL(S) IN INTEGRATED CIRC...
- Publication number 20200105670
- Publication date Apr 2, 2020
- QUALCOMM Incorporated
- John Jianhong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20200083374
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...
- Publication number 20200058792
- Publication date Feb 20, 2020
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHUNT POWER RAIL WITH SHORT LINE EFFECT
- Publication number 20200044440
- Publication date Feb 6, 2020
- QUALCOMM Incorporated
- John Jianhong ZHU
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
INTEGRATED CIRCUITS EMPLOYING VARIED GATE TOPOGRAPHY BETWEEN AN ACT...
- Publication number 20200020688
- Publication date Jan 16, 2020
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS (ICS) MADE USING EXTREME ULTRAVIOLET (EUV) PATT...
- Publication number 20200006122
- Publication date Jan 2, 2020
- QUALCOMM Incorporated
- Mustafa Badaroglu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL CIRCUITS FORMED IN CIRCUIT CELLS EMPLOYING OFFSET GATE CUT ARE...
- Publication number 20190319022
- Publication date Oct 17, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID METAL INTERCONNECT STRUCTURES FOR ADVANCED PROCESS NODES
- Publication number 20190304919
- Publication date Oct 3, 2019
- QUALCOMM Incorporated
- John ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID METALLIZATION INTERCONNECTS FOR POWER DISTRIBUTION AND SIGNA...
- Publication number 20190295942
- Publication date Sep 26, 2019
- QUALCOMM Incorporated
- Mustafa BADAROGLU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR DUMMY GATE TIE-OFFS IN A SELF-ALIGNED GATE...
- Publication number 20190296126
- Publication date Sep 26, 2019
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...
- Publication number 20190237561
- Publication date Aug 1, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT EFFECT MITIGATION IN FINFET
- Publication number 20180197743
- Publication date Jul 12, 2018
- QUALCOMM Incorporated
- Da YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...
- Publication number 20180130894
- Publication date May 10, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STANDARD CELL ARCHITECTURE WITH M1 LAYER UNIDIRECTIONAL ROUTING
- Publication number 20180122824
- Publication date May 3, 2018
- QUALCOMM Incorporated
- Mukul GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE
- Publication number 20180122944
- Publication date May 3, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN
- Publication number 20180114848
- Publication date Apr 26, 2018
- Qualcomm Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT EFFECT MITIGATION IN FINFET
- Publication number 20180082846
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Da YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...
- Publication number 20180082906
- Publication date Mar 22, 2018
- QUALCOMM Incorporated
- Stanley SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES EMPLOYING FIELD EFFECT TRANSISTORS (FETs) WIT...
- Publication number 20180076197
- Publication date Mar 15, 2018
- QUALCOMM Incorporated
- Jeffrey Junhao Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) COMPLEMENTARY METAL OXID...
- Publication number 20180006035
- Publication date Jan 4, 2018
- QUALCOMM Incorporated
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS CELL ARRAY
- Publication number 20170338215
- Publication date Nov 23, 2017
- QUALCOMM Incorporated
- Stanley Seungchul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING A FINFET AND A NANOSTRUCTURE FET
- Publication number 20170278842
- Publication date Sep 28, 2017
- QUALCOMM Incorporated
- Stanley Seungchul SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20170250073
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Dielectric isolated fin with improved fin profile

Gate-all-around (GAA) transistors with shallow source/drain regions...

Field-effect transistors (FET) circuits employing topside and backs...

Hybrid conductor integration in power rail

Gate-all-around (GAA) transistors with additional bottom channel fo...

Cell circuits formed in circuit cells employing offset gate cut are...

Field effect transistor (FET) comprising channels with silicon germ...

Hybrid metallization interconnects for power distribution and signa...

Shunt power rail with short line effect

Dielectric isolated fin with improved fin profile

Semiconductor structures having increased channel strain using fin...

Offset gate contact

Circuits having a diffusion break with avoided or reduced adjacent...

Circuits having a diffusion break with avoided or reduced adjacent...

Standard cell architecture with M1 layer unidirectional routing

Self-aligned quadruple patterning process for Fin pitch below 20nm

Dielectric isolated fin with improved fin profile

Integrated circuits including a FinFET and a nanostructure FET

Integrated circuits employing a field gate(s) without dielectric la...

Semiconductor structures having increased channel strain using fin...

Integrating a gate-all-around (GAA) field-effect transistor(s) (FET...

Layout effect mitigation in FinFET

Hybrid coloring methodology for multi-pattern technology

Semiconductor device having an airgap defined at least partially by...

Semiconductor devices employing field effect transistors (FETs) wit...

Fin field effect transistor (FET) (FinFET) complementary metal oxid...

Fin field effect transistor (FET) (FinFET) complementary metal oxid...

Semiconductor device having a gap defined therein

Semiconductor structures having increased channel strain using fin...

Transistor temperature sensing

Patents Applicationslast 30 patents

FIELD-EFFECT TRANSISTORS (FET) CIRCUITS EMPLOYING TOPSIDE AND BACKS...

GATE-ALL-AROUND (GAA) TRANSISTORS WITH SHALLOW SOURCE/DRAIN REGIONS...

GATE-ALL-AROUND (GAA) TRANSISTORS WITH ADDITIONAL BOTTOM CHANNEL FO...

HYBRID CONDUCTOR INTEGRATION IN POWER RAIL

FIELD EFFECT TRANSISTOR (FET) COMPRISING CHANNELS WITH SILICON GERM...

CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...

SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW 20nm

MIDDLE-OF-LINE (MOL) COMPLEMENTARY POWER RAIL(S) IN INTEGRATED CIRC...

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

CIRCUITS HAVING A DIFFUSION BREAK WITH AVOIDED OR REDUCED ADJACENT...

SHUNT POWER RAIL WITH SHORT LINE EFFECT

INTEGRATED CIRCUITS EMPLOYING VARIED GATE TOPOGRAPHY BETWEEN AN ACT...

INTEGRATED CIRCUITS (ICS) MADE USING EXTREME ULTRAVIOLET (EUV) PATT...

CELL CIRCUITS FORMED IN CIRCUIT CELLS EMPLOYING OFFSET GATE CUT ARE...

HYBRID METAL INTERCONNECT STRUCTURES FOR ADVANCED PROCESS NODES

HYBRID METALLIZATION INTERCONNECTS FOR POWER DISTRIBUTION AND SIGNA...

SYSTEMS AND METHODS FOR DUMMY GATE TIE-OFFS IN A SELF-ALIGNED GATE...

SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...

LAYOUT EFFECT MITIGATION IN FINFET

SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN...

STANDARD CELL ARCHITECTURE WITH M1 LAYER UNIDIRECTIONAL ROUTING

DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN

LAYOUT EFFECT MITIGATION IN FINFET

NOVEL SELF-ALIGNED QUADRUPLE PATTERNING PROCESS FOR FIN PITCH BELOW...

SEMICONDUCTOR DEVICES EMPLOYING FIELD EFFECT TRANSISTORS (FETs) WIT...

FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) COMPLEMENTARY METAL OXID...

HETEROGENEOUS CELL ARRAY

INTEGRATED CIRCUITS INCLUDING A FINFET AND A NANOSTRUCTURE FET

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER