Kevin J. Linthicum

Person

Cary, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Parasitic channel mitigation using silicon carbide diffusion barrie...
- Patent number 11,810,955
- Issue date Nov 7, 2023
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation using silicon carbide diffusion barrie...
- Patent number 11,264,465
- Issue date Mar 1, 2022
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material having a compositionally-graded transition l...
- Patent number 10,177,229
- Issue date Jan 8, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Parasitic channel mitigation using elemental diboride diffusion bar...
- Patent number 9,806,182
- Issue date Oct 31, 2017
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor structures comprising spatially patterned...
- Patent number 9,773,898
- Issue date Sep 26, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation using rare-earth oxide and/or rare-ear...
- Patent number 9,673,281
- Issue date Jun 6, 2017
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Parasitic channel mitigation in III-nitride material semiconductor...
- Patent number 9,627,473
- Issue date Apr 18, 2017
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with compositionally-graded transition layer
- Patent number 9,461,119
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-nitride based semiconductor structure
- Patent number 9,437,687
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with discontinuously graded transition layer
- Patent number 9,437,686
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 9,064,775
- Issue date Jun 23, 2015
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with aluminum nitride intermediate layer
- Patent number 8,937,335
- Issue date Jan 20, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with aluminum nitride alloy intermediate layer
- Patent number 8,928,034
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with gallium nitride alloy intermediate layer
- Patent number 8,928,035
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 8,592,862
- Issue date Nov 26, 2013
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 8,344,417
- Issue date Jan 1, 2013
- International Rectifier Corporation
- T. Warren Weeks, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride materials and methods
- Patent number 8,105,921
- Issue date Jan 31, 2012
- International Rectifier Corporation
- T. Warren Weeks, Jr.
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,994,540
- Issue date Aug 9, 2011
- International Rectifier Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material structures including substrates and method...
- Patent number 7,791,106
- Issue date Sep 7, 2010
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,569,871
- Issue date Aug 4, 2009
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pendeoepitaxial gallium nitride semiconductor layers on silicon car...
- Patent number 7,378,684
- Issue date May 27, 2008
- North Carolina State University
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material structures including substrates and method...
- Patent number 7,365,374
- Issue date Apr 29, 2008
- Nitronex Corporation
- Edwin L. Piner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device-based sensors
- Patent number 7,361,946
- Issue date Apr 22, 2008
- Nitronex Corporation
- Jerry W. Johnson
- G01 - MEASURING TESTING
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,352,016
- Issue date Apr 1, 2008
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material devices and methods of forming the same
- Patent number 7,233,028
- Issue date Jun 19, 2007
- Nitronex Corporation
- T. Warren Weeks
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Pendeoepitaxial methods of fabricating gallium nitride semiconducto...
- Patent number 7,217,641
- Issue date May 15, 2007
- North Carolina State University
- Thomas Gehrke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating gallium nitride semiconductor layers by late...
- Patent number 7,195,993
- Issue date Mar 27, 2007
- North Carolina State University
- Tsvetanka Zheleva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride material transistors and methods associated with th...
- Patent number 7,135,720
- Issue date Nov 14, 2006
- Nitronex Corporation
- Walter H. Nagy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating gallium nitride semiconductor layers on subs...
- Patent number 7,095,062
- Issue date Aug 22, 2006
- North Carolina State University
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride materials including thermally conductive regions
- Patent number 6,956,250
- Issue date Oct 18, 2005
- Nitronex Corporation
- Ricardo Borges
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS
- Publication number 20240355619
- Publication date Oct 24, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin James LINTHICUM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...
- Publication number 20240021678
- Publication date Jan 18, 2024
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...
- Publication number 20220140089
- Publication date May 5, 2022
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20200243651
- Publication date Jul 30, 2020
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...
- Publication number 20200135866
- Publication date Apr 30, 2020
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20190229190
- Publication date Jul 25, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
Gallium nitride materials and methods
- Publication number 20190214468
- Publication date Jul 11, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...
- Publication number 20180122928
- Publication date May 3, 2018
- MACOM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING ELEMENTAL DIBORIDE DIFFUSION BAR...
- Publication number 20180122929
- Publication date May 3, 2018
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...
- Publication number 20180026098
- Publication date Jan 25, 2018
- MACOM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...
- Publication number 20170069746
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...
- Publication number 20170069713
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEM...
- Publication number 20170069745
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTO...
- Publication number 20170069500
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING ALUMINUM NITRIDE DIFFUSION BARRI...
- Publication number 20170069716
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...
- Publication number 20170069721
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING MULTIPLE SPATIALLY...
- Publication number 20170069723
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...
- Publication number 20170069717
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION USING ELEMENTAL DIBORIDE DIFFUSION BAR...
- Publication number 20170069722
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Material Having a Compositionally-Graded Transition L...
- Publication number 20170047407
- Publication date Feb 16, 2017
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
III-Nitride Semiconductor Structure with Intermediate and Transitio...
- Publication number 20160126315
- Publication date May 5, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Based Semiconductor Structure
- Publication number 20150287792
- Publication date Oct 8, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Compositionally-Graded Transition Layer
- Publication number 20150187880
- Publication date Jul 2, 2015
- International Rectifier Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices with Discontinuously Graded Transition Layer
- Publication number 20150108495
- Publication date Apr 23, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Structures With Compositionally-Grade...
- Publication number 20140353680
- Publication date Dec 4, 2014
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
- Publication number 20140131659
- Publication date May 15, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
- Publication number 20140097446
- Publication date Apr 10, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer
- Publication number 20140077222
- Publication date Mar 20, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Compositionally-Graded Transition Layer
- Publication number 20130112990
- Publication date May 9, 2013
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Semiconductor Structures with Compositionally-Grade...
- Publication number 20120119223
- Publication date May 17, 2012
- International Rectifier Corporation
- T. Warren Weeks, JR.
- C30 - CRYSTAL GROWTH

Kevin J. Linthicum

Person

Patents Grantslast 30 patents

Parasitic channel mitigation using silicon carbide diffusion barrie...

Parasitic channel mitigation using silicon carbide diffusion barrie...

Semiconductor material having a compositionally-graded transition l...

Parasitic channel mitigation using elemental diboride diffusion bar...

III-nitride semiconductor structures comprising spatially patterned...

Parasitic channel mitigation using rare-earth oxide and/or rare-ear...

Parasitic channel mitigation in III-nitride material semiconductor...

Semiconductor structure with compositionally-graded transition layer

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride devices with aluminum nitride intermediate layer

Gallium nitride devices with aluminum nitride alloy intermediate layer

Gallium nitride devices with gallium nitride alloy intermediate layer

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride semiconductor structures with compositionally-grade...

Gallium nitride materials and methods

Gallium nitride material transistors and methods associated with th...

Gallium nitride material structures including substrates and method...

Gallium nitride material transistors and methods associated with th...

Pendeoepitaxial gallium nitride semiconductor layers on silicon car...

Gallium nitride material structures including substrates and method...

Semiconductor device-based sensors

Gallium nitride material transistors and methods associated with th...

Gallium nitride material devices and methods of forming the same

Pendeoepitaxial methods of fabricating gallium nitride semiconducto...

Methods of fabricating gallium nitride semiconductor layers by late...

Gallium nitride material transistors and methods associated with th...

Methods of fabricating gallium nitride semiconductor layers on subs...

Gallium nitride materials including thermally conductive regions

Patents Applicationslast 30 patents

SEMICONDUCTOR MATERIAL WAFERS OPTIMIZED FOR LINEAR AMPLIFIERS

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...

GALLIUM NITRIDE MATERIALS AND METHODS

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...

GALLIUM NITRIDE MATERIALS AND METHODS

Gallium nitride materials and methods

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...

PARASITIC CHANNEL MITIGATION USING ELEMENTAL DIBORIDE DIFFUSION BAR...

PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED...

PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR...

METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEM...

METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTO...

PARASITIC CHANNEL MITIGATION USING ALUMINUM NITRIDE DIFFUSION BARRI...

PARASITIC CHANNEL MITIGATION USING SILICON CARBIDE DIFFUSION BARRIE...

III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING MULTIPLE SPATIALLY...

PARASITIC CHANNEL MITIGATION USING RARE-EARTH OXIDE AND/OR RARE-EAR...

PARASITIC CHANNEL MITIGATION USING ELEMENTAL DIBORIDE DIFFUSION BAR...

Semiconductor Material Having a Compositionally-Graded Transition L...

III-Nitride Semiconductor Structure with Intermediate and Transitio...

III-Nitride Based Semiconductor Structure

Semiconductor Structure with Compositionally-Graded Transition Layer

Gallium Nitride Devices with Discontinuously Graded Transition Layer

Gallium Nitride Semiconductor Structures With Compositionally-Grade...

Gallium Nitride Devices With Aluminum Nitride Intermediate Layer

Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer

Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer

Gallium Nitride Devices with Compositionally-Graded Transition Layer

Gallium Nitride Semiconductor Structures with Compositionally-Grade...