Kevin McStay

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices with single-photon avalanche diodes and isola...
- Patent number 12,034,025
- Issue date Jul 9, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jeffrey Peter Gambino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to control bottom corner threshold in an SOI d...
- Patent number 9,484,269
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Joseph Ervin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged source drain epitaxy
- Patent number 9,437,496
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET structures with trench implantation to improve back channel lea...
- Patent number 8,809,953
- Issue date Aug 19, 2014
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation in CMOSFET devices utilizing buried air bags
- Patent number 8,395,217
- Issue date Mar 12, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET structures with trench implantation to improve back channel lea...
- Patent number 8,236,632
- Issue date Aug 7, 2012
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated diode structure and method including relaxed liner
- Patent number 8,232,603
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having V-shaped embedded stressor
- Patent number 7,989,298
- Issue date Aug 2, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for resistive open detection using voltage contrast...
- Patent number 7,733,109
- Issue date Jun 8, 2010
- International Business Machines Corporation
- Ishtiaq Ahsan
- G01 - MEASURING TESTING
Information Patent Grant
Self-aligned drain/channel junction in vertical pass transistor DRA...
- Patent number 6,930,004
- Issue date Aug 16, 2005
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFET with horizontally graded channel doping
- Patent number 6,740,920
- Issue date May 25, 2004
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wordline on and off voltage compensation circuit based on the array...
- Patent number 6,693,843
- Issue date Feb 17, 2004
- Infineon Technologies AG
- Thomas M. Maffitt
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical MOSFET with asymmetrically graded channel doping
- Patent number 6,573,561
- Issue date Jun 3, 2003
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined tracking of WLL and VPP low threshold voltage in DRAM array
- Patent number 6,381,182
- Issue date Apr 30, 2002
- Infineon Technologies AG
- Kevin McStay
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND ISOLA...
- Publication number 20240321924
- Publication date Sep 26, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jeffrey Peter GAMBINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND ISOLA...
- Publication number 20220367534
- Publication date Nov 17, 2022
- Semiconductor Components Industries, LLC
- Jeffrey Peter GAMBINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS
- Publication number 20150333145
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...
- Publication number 20120187490
- Publication date Jul 26, 2012
- International Business Machines Corporation
- DAVID M FRIED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...
- Publication number 20120086077
- Publication date Apr 12, 2012
- International Business Machines Corporation
- DAVID M FRIED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI D...
- Publication number 20110316061
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Joseph ERVIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR
- Publication number 20110183486
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated Diode Structure and Method Including Relaxed Liner
- Publication number 20100237421
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEST STRUCTURE AND METHOD FOR RESISTIVE OPEN DETECTION USING VOLTAG...
- Publication number 20090096461
- Publication date Apr 16, 2009
- International Business Machines Corporation
- Ishtiaq Ahsan
- G01 - MEASURING TESTING
Information Patent Application
Body-Contacted Silicon on Insulation (SOI) field effect transistors
- Publication number 20070048925
- Publication date Mar 1, 2007
- International Business Machines Corporation
- Kevin McStay
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRA...
- Publication number 20050037561
- Publication date Feb 17, 2005
- International Business Machines Corporation
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized buried strap formation utilizing polycrystalline SixC1-x
- Publication number 20040175897
- Publication date Sep 9, 2004
- Paul Wensley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical MOSFET with horizontally graded channel doping
- Publication number 20030168687
- Publication date Sep 11, 2003
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS

Kevin McStay

Person

Patents Grantslast 30 patents

Semiconductor devices with single-photon avalanche diodes and isola...

Structure and method to control bottom corner threshold in an SOI d...

Merged source drain epitaxy

FET structures with trench implantation to improve back channel lea...

Isolation in CMOSFET devices utilizing buried air bags

FET structures with trench implantation to improve back channel lea...

Gated diode structure and method including relaxed liner

Transistor having V-shaped embedded stressor

Test structure for resistive open detection using voltage contrast...

Self-aligned drain/channel junction in vertical pass transistor DRA...

Vertical MOSFET with horizontally graded channel doping

Wordline on and off voltage compensation circuit based on the array...

Vertical MOSFET with asymmetrically graded channel doping

Combined tracking of WLL and VPP low threshold voltage in DRAM array

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND ISOLA...

SEMICONDUCTOR DEVICES WITH SINGLE-PHOTON AVALANCHE DIODES AND ISOLA...

HIGH DENSITY FINFET DEVICES WITH UNMERGED FINS

FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...

FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...

STRUCTURE AND METHOD TO CONTROL BOTTOM CORNER THRESHOLD IN AN SOI D...

TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR

Gated Diode Structure and Method Including Relaxed Liner

TEST STRUCTURE AND METHOD FOR RESISTIVE OPEN DETECTION USING VOLTAG...

Body-Contacted Silicon on Insulation (SOI) field effect transistors

SELF-ALIGNED DRAIN/CHANNEL JUNCTION IN VERTICAL PASS TRANSISTOR DRA...

Optimized buried strap formation utilizing polycrystalline SixC1-x

Vertical MOSFET with horizontally graded channel doping