Kiyokazu Shishido

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with reduced word line switch area
- Patent number 12,032,837
- Issue date Jul 9, 2024
- SANDISK TECHNOLOGIES LLC
- Yuki Mizutani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,876,096
- Issue date Jan 16, 2024
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors with reduced gate fringe area and method o...
- Patent number 11,710,740
- Issue date Jul 25, 2023
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable die size memory device and methods of manufacturing the same
- Patent number 11,069,707
- Issue date Jul 20, 2021
- SanDisk Technologies LLC
- Tomoka Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing bidirectional taper stai...
- Patent number 10,804,284
- Issue date Oct 13, 2020
- SanDisk Technologies LLC
- Yasushi Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices containing asymmetric contact via structures
- Patent number 10,770,459
- Issue date Sep 8, 2020
- SanDisk Technologies LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing hydrogen diffusion block...
- Patent number 10,515,897
- Issue date Dec 24, 2019
- SanDisk Technologies LLC
- Masatoshi Nishikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device containing hydrogen diffusion block...
- Patent number 10,515,907
- Issue date Dec 24, 2019
- SanDisk Technologies LLC
- Takahito Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS devices containing asymmetric contact via structures and metho...
- Patent number 10,355,017
- Issue date Jul 16, 2019
- SanDisk Technologies LLC
- Hiroshi Nakatsuji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors having semiconductor-metal composite gate electrodes co...
- Patent number 10,256,099
- Issue date Apr 9, 2019
- SanDisk Technologies LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal line with increased inter-metal breakdown voltage
- Patent number 9,607,997
- Issue date Mar 28, 2017
- SanDisk Technologies Inc.
- Katsuo Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Early bit line air gap formation
- Patent number 9,524,904
- Issue date Dec 20, 2016
- SanDisk Technologies LLC
- Hiroto Ohori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive line structure with openings
- Patent number 9,478,461
- Issue date Oct 25, 2016
- SanDisk Technologies LLC
- Kiyokazu Shishido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal indentation to increase inter-metal breakdown voltage
- Patent number 9,391,081
- Issue date Jul 12, 2016
- SanDisk Technologies LLC
- Kiyokazu Shishido
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040217
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240258317
- Publication date Aug 1, 2024
- SANDISK TECHNOLOGIES LLC
- Kiyokazu SHISHIDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...
- Publication number 20240147730
- Publication date May 2, 2024
- SANDISK TECHNOLOGIES LLC
- Kiyokazu SHISHIDO
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED WORD LINE SWITCH AREA
- Publication number 20240111440
- Publication date Apr 4, 2024
- SANDISK TECHNOLOGIES LLC
- Yuki Mizutani
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230112262
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230111003
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...
- Publication number 20230111724
- Publication date Apr 13, 2023
- SANDISK TECHNOLOGIES LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE DIE SIZE MEMORY DEVICE AND METHODS OF MANUFACTURING THE SAME
- Publication number 20210126008
- Publication date Apr 29, 2021
- SANDISK TECHNOLOGIES LLC
- Tomoka TANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...
- Publication number 20190355663
- Publication date Nov 21, 2019
- SanDisk Technologies LLC
- Masatoshi NISHIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...
- Publication number 20190355672
- Publication date Nov 21, 2019
- SanDisk Technologies LLC
- Takahito FUJITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BIDIRECTIONAL TAPER STAI...
- Publication number 20190319040
- Publication date Oct 17, 2019
- SanDisk Technologies LLC
- Yasushi Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES CONTAINING ASYMMETRIC CONTACT VIA STRUCTURES AND METHO...
- Publication number 20190296012
- Publication date Sep 26, 2019
- SANDISK TECHNOLOGIES LLC
- Dai Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Line with Increased Inter-Metal Breakdown Voltage
- Publication number 20170069638
- Publication date Mar 9, 2017
- SANDISK TECHNOLOGIES INC.
- Katsuo Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Plug Extension for Bit Line Connection
- Publication number 20170025354
- Publication date Jan 26, 2017
- SanDisk Technologies, Inc.
- Shunsuke Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Early Bit Line Air Gap Formation
- Publication number 20160111326
- Publication date Apr 21, 2016
- SANDISK TECHNOLOGIES INC.
- Hiroto Ohori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conductive Line Structure with Openings
- Publication number 20160086848
- Publication date Mar 24, 2016
- SANDISK TECHNOLOGIES INC.
- Kiyokazu Shishido
- H01 - BASIC ELECTRIC ELEMENTS

Kiyokazu Shishido

Person

Patents Grantslast 30 patents

Non-volatile memory with reduced word line switch area

Field effect transistors with reduced gate fringe area and method o...

Field effect transistors with reduced gate fringe area and method o...

Variable die size memory device and methods of manufacturing the same

Three-dimensional memory device containing bidirectional taper stai...

CMOS devices containing asymmetric contact via structures

Three-dimensional memory device containing hydrogen diffusion block...

Three-dimensional memory device containing hydrogen diffusion block...

CMOS devices containing asymmetric contact via structures and metho...

Transistors having semiconductor-metal composite gate electrodes co...

Metal line with increased inter-metal breakdown voltage

Early bit line air gap formation

Conductive line structure with openings

Metal indentation to increase inter-metal breakdown voltage

Patents Applicationslast 30 patents

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

TRANSISTOR CIRCUITS INCLUDING FRINGELESS TRANSISTORS AND METHOD OF...

NON-VOLATILE MEMORY WITH REDUCED WORD LINE SWITCH AREA

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

FIELD EFFECT TRANSISTORS WITH REDUCED GATE FRINGE AREA AND METHOD O...

VARIABLE DIE SIZE MEMORY DEVICE AND METHODS OF MANUFACTURING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING HYDROGEN DIFFUSION BLOCK...

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING BIDIRECTIONAL TAPER STAI...

CMOS DEVICES CONTAINING ASYMMETRIC CONTACT VIA STRUCTURES AND METHO...

Metal Line with Increased Inter-Metal Breakdown Voltage

Contact Plug Extension for Bit Line Connection

Early Bit Line Air Gap Formation

Conductive Line Structure with Openings