Kiyoshi Hisatomi

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having insulation film whose breakdown voltage...
- Patent number 6,163,050
- Issue date Dec 19, 2000
- Kabushiki Kaisha Toshiba
- Kiyoshi Hisatomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having insulation film whose breakdown voltage...
- Patent number 5,714,399
- Issue date Feb 3, 1998
- Kabushiki Kaisha Toshiba
- Kiyoshi Hisatomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer process
- Patent number 4,588,473
- Issue date May 13, 1986
- Tokyo Shibaura Denki Kabushiki Kaisha
- Kiyoshi Hisatomi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20070102773
- Publication date May 10, 2007
- Kabushiki Kaisha Toshiba
- Kiyoshi HISATOMI
- H01 - BASIC ELECTRIC ELEMENTS