Klaus Hempel

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Short-channel NFET device
- Patent number 10,121,665
- Issue date Nov 6, 2018
- GLOBALFOUNDRIES Inc.
- Chi Dong Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits and methods of forming the same with effective...
- Patent number 9,917,016
- Issue date Mar 13, 2018
- GLOBALFOUNDRIES, INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel nFET device
- Patent number 9,735,012
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Inc.
- Chi Dong Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate electrode structure formed by removing a work fun...
- Patent number 8,735,236
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making high-K metal gate electrode structures by separat...
- Patent number 8,735,270
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate electrode structures formed by reducing a gate fi...
- Patent number 8,716,120
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain/source extension structure of a field effect transistor with...
- Patent number 8,697,530
- Issue date Apr 15, 2014
- GLOBALFOUNDRIES Inc.
- Ekkehard Pruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etch polysilicon removal for replacement gates
- Patent number 8,673,759
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Chris M. Prindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate stack formation for replacement gate technology
- Patent number 8,664,103
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k metal gate electrode structures formed by separate removal o...
- Patent number 8,652,956
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising metal gates and semiconductor resis...
- Patent number 8,450,163
- Issue date May 28, 2013
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-K metal gate electrode structures...
- Patent number 8,440,559
- Issue date May 14, 2013
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with controlled P-chann...
- Patent number 8,420,519
- Issue date Apr 16, 2013
- GLOBALFOUNDRIES, INC.
- Dina Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming CMOS transistors having metal-containing gate el...
- Patent number 8,367,495
- Issue date Feb 5, 2013
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,357,575
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing integrity of a high-k gate stack by confining a metal cap...
- Patent number 8,324,091
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES Inc.
- Joachim Metzger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-k metal gate electrode structures...
- Patent number 8,298,894
- Issue date Oct 30, 2012
- GLOBALFOUNDRIES Inc.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,247,281
- Issue date Aug 21, 2012
- GLOBALFOUNDRIES, INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K metal gate electrode structures formed by separate removal o...
- Patent number 8,232,188
- Issue date Jul 31, 2012
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure having different stress
- Patent number 8,158,486
- Issue date Apr 17, 2012
- Advanced Micro Devices, Inc.
- Ralf Van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior fill conditions in a replacement gate approach by corner r...
- Patent number 8,048,792
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structure for a semiconductor device with reduced...
- Patent number 7,358,150
- Issue date Apr 15, 2008
- Advanced Micro Devices, Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SHORT-CHANNEL NFET DEVICE
- Publication number 20170316944
- Publication date Nov 2, 2017
- GLOBALFOUNDRIES INC.
- Chi Dong Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CHANNEL NFET DEVICE
- Publication number 20160284549
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES INC.
- Chi Dong Nguyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH EFFECTIVE...
- Publication number 20160172251
- Publication date Jun 16, 2016
- GLOBALFOUNDRIES, Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE ELECTRODE FILL AT REDUCED TEMPERATURES
- Publication number 20130302974
- Publication date Nov 14, 2013
- GLOBALFOUNDRIES INC.
- Jens Hahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...
- Publication number 20130273729
- Publication date Oct 17, 2013
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRY ETCH POLYSILICON REMOVAL FOR REPLACEMENT GATES
- Publication number 20130217221
- Publication date Aug 22, 2013
- GLOBALFOUNDRIES INC.
- Chris M. PRINDLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Metal Gate Electrode Structure Formed by Removing a Work Fun...
- Publication number 20130168773
- Publication date Jul 4, 2013
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH CONTROLLED P-CHANN...
- Publication number 20130109166
- Publication date May 2, 2013
- GLOBALFOUNDRIES INC.
- Dina Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20130017679
- Publication date Jan 17, 2013
- GLOBALFOUNDRIES INC.
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FI...
- Publication number 20120319205
- Publication date Dec 20, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate Stack Formation for Replacement Gate Technology
- Publication number 20120315749
- Publication date Dec 13, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20120282764
- Publication date Nov 8, 2012
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...
- Publication number 20120261765
- Publication date Oct 18, 2012
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT...
- Publication number 20120238086
- Publication date Sep 20, 2012
- GLOBALFOUNDRIES INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Metal Gates and Semiconductor Resis...
- Publication number 20110266633
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...
- Publication number 20110127613
- Publication date Jun 2, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE S...
- Publication number 20110127590
- Publication date Jun 2, 2011
- Robert Binder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...
- Publication number 20110101470
- Publication date May 5, 2011
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER R...
- Publication number 20110073963
- Publication date Mar 31, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20100330790
- Publication date Dec 30, 2010
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...
- Publication number 20100301427
- Publication date Dec 2, 2010
- Markus Lenski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD ADJUSTMENT OF TRANSISTORS INCLUDING HIGH-K METAL GATE ELE...
- Publication number 20100244141
- Publication date Sep 30, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP...
- Publication number 20100221906
- Publication date Sep 2, 2010
- Joachim Metzger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH...
- Publication number 20080001191
- Publication date Jan 3, 2008
- Ekkehard Pruefer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH REDUCED...
- Publication number 20070155120
- Publication date Jul 5, 2007
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION STRUCTURE HAVING DIFFERENT STRESS
- Publication number 20070155122
- Publication date Jul 5, 2007
- Ralf Van Bentum
- H01 - BASIC ELECTRIC ELEMENTS

Klaus Hempel

Person

Patents Grantslast 30 patents

Short-channel NFET device

Integrated circuits and methods of forming the same with effective...

Short-channel nFET device

High-k metal gate electrode structure formed by removing a work fun...

Method for making high-K metal gate electrode structures by separat...

High-k metal gate electrode structures formed by reducing a gate fi...

Drain/source extension structure of a field effect transistor with...

Dry etch polysilicon removal for replacement gates

Metal gate stack formation for replacement gate technology

High-k metal gate electrode structures formed by separate removal o...

Semiconductor device comprising metal gates and semiconductor resis...

Work function adjustment in high-K metal gate electrode structures...

Methods for fabricating integrated circuits with controlled P-chann...

Method for forming CMOS transistors having metal-containing gate el...

Technique for exposing a placeholder material in a replacement gate...

Enhancing integrity of a high-k gate stack by confining a metal cap...

Work function adjustment in high-k metal gate electrode structures...

Technique for exposing a placeholder material in a replacement gate...

High-K metal gate electrode structures formed by separate removal o...

Trench isolation structure having different stress

Superior fill conditions in a replacement gate approach by corner r...

Trench isolation structure for a semiconductor device with reduced...

Patents Applicationslast 30 patents

SHORT-CHANNEL NFET DEVICE

SHORT-CHANNEL NFET DEVICE

INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME WITH EFFECTIVE...

REPLACEMENT GATE ELECTRODE FILL AT REDUCED TEMPERATURES

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...

DRY ETCH POLYSILICON REMOVAL FOR REPLACEMENT GATES

High-K Metal Gate Electrode Structure Formed by Removing a Work Fun...

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH CONTROLLED P-CHANN...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FI...

Metal Gate Stack Formation for Replacement Gate Technology

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...

REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT...

Semiconductor Device Comprising Metal Gates and Semiconductor Resis...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...

INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE S...

HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY SEPARATE REMOVAL O...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY CORNER R...

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES...

THRESHOLD ADJUSTMENT OF TRANSISTORS INCLUDING HIGH-K METAL GATE ELE...

ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP...

DRAIN/SOURCE EXTENSION STRUCTURE OF A FIELD EFFECT TRANSISTOR WITH...

TRENCH ISOLATION STRUCTURE FOR A SEMICONDUCTOR DEVICE WITH REDUCED...

TRENCH ISOLATION STRUCTURE HAVING DIFFERENT STRESS