Kohei Sasaki

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Ga2O3-based single crystal substrate
- Patent number 12,104,276
- Issue date Oct 1, 2024
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Field effect transistor
- Patent number 12,087,856
- Issue date Sep 10, 2024
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing beta-Ga2O3-based single crystal film, and crysta...
- Patent number 11,982,016
- Issue date May 14, 2024
- Tamura Corporation
- Ken Goto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Schottky barrier diode
- Patent number 11,923,464
- Issue date Mar 5, 2024
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,626,522
- Issue date Apr 11, 2023
- TDK Corporation
- Jun Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,621,357
- Issue date Apr 4, 2023
- TDK Corporation
- Jun Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 11,616,138
- Issue date Mar 28, 2023
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GA2O3-based semiconductor device
- Patent number 11,563,092
- Issue date Jan 24, 2023
- National Institute of Information and Communications Technology
- Masataka Higashiwaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,557,681
- Issue date Jan 17, 2023
- TDK Corporation
- Jun Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,469,334
- Issue date Oct 11, 2022
- TDK Corporation
- Jun Arima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS schottky diode and method for producing same
- Patent number 11,456,388
- Issue date Sep 27, 2022
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode
- Patent number 11,355,594
- Issue date Jun 7, 2022
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate, semiconductor element and method for produ...
- Patent number 11,264,241
- Issue date Mar 1, 2022
- Tamura Corporation
- Akito Kuramata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS Schottky diode
- Patent number 11,081,598
- Issue date Aug 3, 2021
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,043,602
- Issue date Jun 22, 2021
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode
- Patent number 11,011,653
- Issue date May 18, 2021
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element and crystalline laminate structure
- Patent number 10,861,945
- Issue date Dec 8, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS-type Schottky diode
- Patent number 10,825,935
- Issue date Nov 3, 2020
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GA2O3-based single crystal substrate, and production method therefor
- Patent number 10,633,761
- Issue date Apr 28, 2020
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ga2O3-based crystal film, and crystal multilayer structure
- Patent number 10,358,742
- Issue date Jul 23, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ga2O3-based semiconductor element
- Patent number 10,249,767
- Issue date Apr 2, 2019
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element, method for manufacturing same, semiconductor...
- Patent number 10,230,007
- Issue date Mar 12, 2019
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
High voltage withstand Ga2O3-based single crystal schottky barrier...
- Patent number 10,199,512
- Issue date Feb 5, 2019
- Tamura Corporation
- Kohei Sasaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ga2O3-based single crystal substrate, and production method therefor
- Patent number 10,161,058
- Issue date Dec 25, 2018
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal laminate structure and method for producing same
- Patent number 9,716,004
- Issue date Jul 25, 2017
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate for epitaxial growth, and crystal laminate structure
- Patent number 9,685,515
- Issue date Jun 20, 2017
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Ga2O3 based crystal film
- Patent number 9,657,410
- Issue date May 23, 2017
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling donor concentration in Ga2O3-based and metho...
- Patent number 9,611,567
- Issue date Apr 4, 2017
- Tamura Corporation
- Kohei Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,461,124
- Issue date Oct 4, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ga2O3 semiconductor element
- Patent number 9,437,689
- Issue date Sep 6, 2016
- Tamura Corporation
- Kohei Sasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P-N JUNCTION DIODE
- Publication number 20240379881
- Publication date Nov 14, 2024
- TAMURA CORPORATION
- Akio TAKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...
- Publication number 20240355621
- Publication date Oct 24, 2024
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20230197844
- Publication date Jun 22, 2023
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME
- Publication number 20230162978
- Publication date May 25, 2023
- TAMURA CORPORATION
- Quang Tu THIEU
- C30 - CRYSTAL GROWTH
Information Patent Application
TRENCH-TYPE MESFET
- Publication number 20230043402
- Publication date Feb 9, 2023
- NOVEL CRYSTAL TECHNOLOGY, INC.
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230034806
- Publication date Feb 2, 2023
- TAMURA CORPORATION
- Nobuo MACHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...
- Publication number 20210404086
- Publication date Dec 30, 2021
- TAMURA CORPORATION
- Ken GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20210343879
- Publication date Nov 4, 2021
- TDK Corporation
- Jun ARIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20210343880
- Publication date Nov 4, 2021
- TDK Corporation
- Jun ARIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
- Publication number 20210238766
- Publication date Aug 5, 2021
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20210167225
- Publication date Jun 3, 2021
- TDK Corporation
- Jun ARIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20210151611
- Publication date May 20, 2021
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20210119062
- Publication date Apr 22, 2021
- TDK Corporation
- Jun ARIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOS SCHOTTKY DIODE AND METHOD FOR PRODUCING SAME
- Publication number 20210020789
- Publication date Jan 21, 2021
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20200235234
- Publication date Jul 23, 2020
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIODE
- Publication number 20200168711
- Publication date May 28, 2020
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...
- Publication number 20200168460
- Publication date May 28, 2020
- TAMURA CORPORATION
- Akito KURAMATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GA2O3-BASED SEMICONDUCTOR DEVICE
- Publication number 20200144377
- Publication date May 7, 2020
- National Institute of Information and Communications Technology
- Masataka HIGASHIWAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOS SCHOTTKY DIODE
- Publication number 20200066921
- Publication date Feb 27, 2020
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20190363197
- Publication date Nov 28, 2019
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOS-TYPE SCHOTTKY DIODE
- Publication number 20190148563
- Publication date May 16, 2019
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR
- Publication number 20190062942
- Publication date Feb 28, 2019
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20180350967
- Publication date Dec 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
- Publication number 20180254355
- Publication date Sep 6, 2018
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING Ga2O3-BASED CRYSTAL FILM, AND CRYSTAL MULTILAYER...
- Publication number 20170350037
- Publication date Dec 7, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME
- Publication number 20170288061
- Publication date Oct 5, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE
- Publication number 20170278933
- Publication date Sep 28, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE
- Publication number 20170233892
- Publication date Aug 17, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...
- Publication number 20170213918
- Publication date Jul 27, 2017
- TAMURA CORPORATION
- Kohei SASAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Ga2O3 SEMICONDUCTOR ELEMENT
- Publication number 20160365418
- Publication date Dec 15, 2016
- TAMURA CORPORATION
- Kohei SASAKI
- H01 - BASIC ELECTRIC ELEMENTS

Kohei Sasaki

Person

Patents Grantslast 30 patents

Ga2O3-based single crystal substrate

Field effect transistor

Method for growing beta-Ga2O3-based single crystal film, and crysta...

Schottky barrier diode

Schottky barrier diode

Schottky barrier diode

Field effect transistor

GA2O3-based semiconductor device

Schottky barrier diode

Schottky barrier diode

Trench MOS schottky diode and method for producing same

Diode

Semiconductor substrate, semiconductor element and method for produ...

Trench MOS Schottky diode

Schottky barrier diode

Schottky barrier diode

Semiconductor element and crystalline laminate structure

Trench MOS-type Schottky diode

GA2O3-based single crystal substrate, and production method therefor

Ga2O3-based crystal film, and crystal multilayer structure

Ga2O3-based semiconductor element

Semiconductor element, method for manufacturing same, semiconductor...

High voltage withstand Ga2O3-based single crystal schottky barrier...

Ga2O3-based single crystal substrate, and production method therefor

Crystal laminate structure and method for producing same

Substrate for epitaxial growth, and crystal laminate structure

Method for producing Ga2O3 based crystal film

Method for controlling donor concentration in Ga2O3-based and metho...

Ga2O3 semiconductor element

Ga2O3 semiconductor element

Patents Applicationslast 30 patents

P-N JUNCTION DIODE

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR WAFER, AND METHOD FOR MANUFA...

FIELD EFFECT TRANSISTOR

SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SAME

TRENCH-TYPE MESFET

SEMICONDUCTOR DEVICE

METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTA...

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE

Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE

TRENCH MOS SCHOTTKY DIODE AND METHOD FOR PRODUCING SAME

FIELD EFFECT TRANSISTOR

DIODE

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODU...

GA2O3-BASED SEMICONDUCTOR DEVICE

TRENCH MOS SCHOTTKY DIODE

SCHOTTKY BARRIER DIODE

TRENCH MOS-TYPE SCHOTTKY DIODE

GA2O3-BASED SINGLE CRYSTAL SUBSTRATE, AND PRODUCTION METHOD THEREFOR

Ga2O3 SEMICONDUCTOR ELEMENT

HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE

METHOD OF GROWING Ga2O3-BASED CRYSTAL FILM, AND CRYSTAL MULTILAYER...

SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME

SEMICONDUCTOR ELEMENT AND CRYSTALLINE LAMINATE STRUCTURE

Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE

SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR...

Ga2O3 SEMICONDUCTOR ELEMENT