Koichiro Yuki

Person

Kyoto, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor and method for fabricating the same
- Patent number 7,465,969
- Issue date Dec 16, 2008
- Panasonic Corporation
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having reduced driving voltage re...
- Patent number 7,135,721
- Issue date Nov 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for fabricating the same
- Patent number 7,091,099
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,049,198
- Issue date May 23, 2006
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,847,063
- Issue date Jan 25, 2005
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,847,062
- Issue date Jan 25, 2005
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for fabricating the same
- Patent number 6,821,870
- Issue date Nov 23, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 6,759,697
- Issue date Jul 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistor and method of fabricating...
- Patent number 6,756,278
- Issue date Jun 29, 2004
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,713,790
- Issue date Mar 30, 2004
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for fabricating the same
- Patent number 6,674,150
- Issue date Jan 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,597,016
- Issue date Jul 22, 2003
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistor and method of fabricating...
- Patent number 6,563,146
- Issue date May 13, 2003
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method for fabricating the same
- Patent number 6,492,711
- Issue date Dec 10, 2002
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,455,364
- Issue date Sep 24, 2002
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,399,993
- Issue date Jun 4, 2002
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having dot elements as floating gate
- Patent number 6,342,716
- Issue date Jan 29, 2002
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming dot element
- Patent number 6,303,516
- Issue date Oct 16, 2001
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,171,905
- Issue date Jan 9, 2001
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing quantization functional device
- Patent number 6,103,583
- Issue date Aug 15, 2000
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Morimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS SOI semiconductor device with RTD and/or HET
- Patent number 6,091,077
- Issue date Jul 18, 2000
- Matsushita Electric Industrial Co., Ltd.
- Kiyoyuki Morita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonance tunnel device
- Patent number 6,015,978
- Issue date Jan 18, 2000
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum effect device, method of manufacturing the same
- Patent number 5,972,744
- Issue date Oct 26, 1999
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Morimoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantization functional device, quantization functional apparatus u...
- Patent number 5,945,687
- Issue date Aug 31, 1999
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Morimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor microstructure, semiconductor devi...
- Patent number 5,888,852
- Issue date Mar 30, 1999
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantization functional device utilizing a resonance tunneling effe...
- Patent number 5,739,544
- Issue date Apr 14, 1998
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of producing a quantum device which utilizes the quantum effect
- Patent number 5,562,802
- Issue date Oct 8, 1996
- Matsushita Electric Industrial Co., Ltd.
- Kenji Okada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of producing electrically insulated silicon structure
- Patent number 5,543,351
- Issue date Aug 6, 1996
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiko Hirai
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing quantization functional device utilizing a res...
- Patent number 5,514,614
- Issue date May 7, 1996
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantization functional device utilizing a resonance tunneling effe...
- Patent number 5,486,706
- Issue date Jan 23, 1996
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Bipolar transistor and method for fabricating the same
- Publication number 20060226446
- Publication date Oct 12, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20040232441
- Publication date Nov 25, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and method for fabricating the same
- Publication number 20040195655
- Publication date Oct 7, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040065878
- Publication date Apr 8, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040065875
- Publication date Apr 8, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20030213977
- Publication date Nov 20, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030162335
- Publication date Aug 28, 2003
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral heterojunction bipolar transistor and method of fabricating...
- Publication number 20030054601
- Publication date Mar 20, 2003
- Matsushita Electric Industrial Co., Ltd.
- Koichiro Yuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020197809
- Publication date Dec 26, 2002
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and method for fabricating the same
- Publication number 20020192918
- Publication date Dec 19, 2002
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20020163013
- Publication date Nov 7, 2002
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and method for fabricating the same
- Publication number 20020158313
- Publication date Oct 31, 2002
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS

Koichiro Yuki

Person

Patents Grantslast 30 patents

Bipolar transistor and method for fabricating the same

Heterojunction bipolar transistor having reduced driving voltage re...

Bipolar transistor and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device

Heterojunction bipolar transistor and method for fabricating the same

Heterojunction bipolar transistor

Lateral heterojunction bipolar transistor and method of fabricating...

Semiconductor device and method for fabricating the same

Heterojunction bipolar transistor and method for fabricating the same

Semiconductor device and method for fabricating the same

Lateral heterojunction bipolar transistor and method of fabricating...

Heterojunction bipolar transistor and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device having dot elements as floating gate

Method for forming dot element

Semiconductor device and method of manufacturing the same

Method for producing quantization functional device

MIS SOI semiconductor device with RTD and/or HET

Resonance tunnel device

Quantum effect device, method of manufacturing the same

Quantization functional device, quantization functional apparatus u...

Method for forming semiconductor microstructure, semiconductor devi...

Quantization functional device utilizing a resonance tunneling effe...

Method of producing a quantum device which utilizes the quantum effect

Method of producing electrically insulated silicon structure

Method for producing quantization functional device utilizing a res...

Quantization functional device utilizing a resonance tunneling effe...

Patents Applicationslast 30 patents

Bipolar transistor and method for fabricating the same

Heterojunction bipolar transistor

Bipolar transistor and method for fabricating the same

Semiconductor device

Semiconductor device

Heterojunction bipolar transistor

Semiconductor device and method for fabricating the same

Lateral heterojunction bipolar transistor and method of fabricating...

Semiconductor device and method for fabricating the same

Heterojunction bipolar transistor and method for fabricating the same

Heterojunction bipolar transistor

Heterojunction bipolar transistor and method for fabricating the same