Koji Izunome

Person

Ami-machi, Inashiki-gun, Ibaragi-ken, 300-11, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing three-dimensional structure, method for produc...
- Patent number 11,887,845
- Issue date Jan 30, 2024
- Globalwafers Japan Co., Ltd
- Kazutaka Kamijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer and method for heat-treating silicon wafer
- Patent number 8,999,864
- Issue date Apr 7, 2015
- Global Wafers Japan Co., Ltd.
- Takeshi Senda
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing single crystal silicon wafer from ingot gro...
- Patent number 8,476,149
- Issue date Jul 2, 2013
- Global Wafers Japan Co., Ltd.
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for heat treating a silicon wafer
- Patent number 8,399,341
- Issue date Mar 19, 2013
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of heat treating silicon wafer
- Patent number 8,252,700
- Issue date Aug 28, 2012
- Covalent Materials Corporation
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for silicon wafer
- Patent number 7,977,219
- Issue date Jul 12, 2011
- Covalent Materials Corporation
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Surface inspection apparatus and surface inspection method for stra...
- Patent number 7,679,730
- Issue date Mar 16, 2010
- Shibaura Mechatronics Corporation
- Hideaki Takano
- G01 - MEASURING TESTING
Information Patent Grant
Surface inspection apparatus and surface inspection method
- Patent number 7,403,278
- Issue date Jul 22, 2008
- Shibaura Mechatronics Corporation
- Yoshinori Hayashi
- G01 - MEASURING TESTING
Information Patent Grant
Manufacturing method for strained silicon wafer
- Patent number 7,250,357
- Issue date Jul 31, 2007
- Toshiba Ceramics Co., Ltd.
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for strained silicon wafer
- Patent number 7,247,583
- Issue date Jul 24, 2007
- Toshiba Ceramics Co., Ltd.
- Hisatsugu Kurita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate comprising a support substrate which compri...
- Patent number 7,193,294
- Issue date Mar 20, 2007
- Toshiba Ceramics Co., Ltd.
- Reiko Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer inspection apparatus
- Patent number 7,149,341
- Issue date Dec 12, 2006
- Toshiba Ceramics Co., Ltd.
- Yoshinori Hayashi
- G01 - MEASURING TESTING
Information Patent Grant
Manufacturing method for a silicon substrate having strained layer
- Patent number 7,060,597
- Issue date Jun 13, 2006
- Toshiba Ceramics Co., Ltd.
- Hisatsugu Kurita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of silicon crystal from melt having extraordinary eddy flows...
- Patent number 5,704,974
- Issue date Jan 6, 1998
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon single crystal having uniform impurity distributi...
- Patent number 5,700,320
- Issue date Dec 23, 1997
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth of silicon single crystal
- Patent number 5,683,504
- Issue date Nov 4, 1997
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Grant
Preparation of silicon melt for use in pull method of manufacturing...
- Patent number 5,477,805
- Issue date Dec 26, 1995
- Research Development Corporation of Japan
- Koji Izunome
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
- Publication number 20230243062
- Publication date Aug 3, 2023
- GLOBALWAFERS JAPAN CO., LTD.
- Haruo SUDO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUC...
- Publication number 20220093396
- Publication date Mar 24, 2022
- GlobalWafers Japan Co., Ltd.
- Kazutaka KAMIJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUC...
- Publication number 20200211840
- Publication date Jul 2, 2020
- GlobalWafers Japan Co., Ltd.
- Kazutaka KAMIJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HEAT TREATING A SILICON WAFER
- Publication number 20120184091
- Publication date Jul 19, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER
- Publication number 20120139088
- Publication date Jun 7, 2012
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of heat treating silicon wafer
- Publication number 20100197146
- Publication date Aug 5, 2010
- COVALENT MATERIALS CORPORATION
- Takeshi Senda
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR SILICON WAFER
- Publication number 20100055884
- Publication date Mar 4, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...
- Publication number 20100038757
- Publication date Feb 18, 2010
- COVALENT MATERIALS CORPORATION
- Hiromichi Isogai
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE INSPECTION APPARATUS AND SURFACE INSPECTION METHOD FOR STRA...
- Publication number 20090066933
- Publication date Mar 12, 2009
- SHIBAURA MECHATRONICS CORPORATION
- Hideaki Takano
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE
- Publication number 20090004825
- Publication date Jan 1, 2009
- Covalent Materials Corporation
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20080164572
- Publication date Jul 10, 2008
- Covalent Materials Corporation
- Eiji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT TREATMENT METHOD FOR SILICON WAFER
- Publication number 20080166891
- Publication date Jul 10, 2008
- COVALENT MATERIALS CORPORATION
- Manabu Hirasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON WAFER
- Publication number 20070240628
- Publication date Oct 18, 2007
- Toshiba Ceramics Co., Ltd
- Takashi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Application
SURFACE INSPECTION APPARATUS AND SURFACE INSPECTION METHOD
- Publication number 20070222977
- Publication date Sep 27, 2007
- SHIBAURA MECHATRONICS CORPORATION
- Yoshinori Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Method of manufacturing silicon wafer
- Publication number 20070068447
- Publication date Mar 29, 2007
- TOSHIBA CERAMICS CO., LTD.
- Koji Izunome
- C30 - CRYSTAL GROWTH
Information Patent Application
A semiconductor substrate comprising a support substrate which comp...
- Publication number 20060118868
- Publication date Jun 8, 2006
- TOSHIBA CERAMICS CO., LTD.
- Reiko Yoshimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for strained silicon wafer
- Publication number 20060057856
- Publication date Mar 16, 2006
- TOSHIBA CERAMICS CO., LTD.
- Takeshi Senda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing method for strained silicon wafer
- Publication number 20050170664
- Publication date Aug 4, 2005
- TOSHIBA CERAMICS CO., LTD.
- Hisatsugu Kurita
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method for a silicon substrate having strained layer
- Publication number 20040235274
- Publication date Nov 25, 2004
- TOSHIBA CERAMICS CO., LTD.
- Hisatsugu Kurita
- C30 - CRYSTAL GROWTH
Information Patent Application
Wafer inspection apparatus
- Publication number 20030169916
- Publication date Sep 11, 2003
- TOSHIBA CERAMICS CO., LTD.
- Yoshinori Hayashi
- G01 - MEASURING TESTING

Koji Izunome

Person

Patents Grantslast 30 patents

Method for producing three-dimensional structure, method for produc...

Silicon wafer and method for heat-treating silicon wafer

Method of manufacturing single crystal silicon wafer from ingot gro...

Method for heat treating a silicon wafer

Method of heat treating silicon wafer

Manufacturing method for silicon wafer

Surface inspection apparatus and surface inspection method for stra...

Surface inspection apparatus and surface inspection method

Manufacturing method for strained silicon wafer

Manufacturing method for strained silicon wafer

Semiconductor substrate comprising a support substrate which compri...

Wafer inspection apparatus

Manufacturing method for a silicon substrate having strained layer

Growth of silicon crystal from melt having extraordinary eddy flows...

Growth of silicon single crystal having uniform impurity distributi...

Growth of silicon single crystal

Preparation of silicon melt for use in pull method of manufacturing...

Patents Applicationslast 30 patents

SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER

METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUC...

METHOD FOR PRODUCING THREE-DIMENSIONAL STRUCTURE, METHOD FOR PRODUC...

METHOD FOR HEAT TREATING A SILICON WAFER

SILICON WAFER AND METHOD FOR HEAT-TREATING SILICON WAFER

Method of heat treating silicon wafer

MANUFACTURING METHOD FOR SILICON WAFER

SILICON WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR HEA...

SURFACE INSPECTION APPARATUS AND SURFACE INSPECTION METHOD FOR STRA...

METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE

SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

HEAT TREATMENT METHOD FOR SILICON WAFER

SILICON WAFER

SURFACE INSPECTION APPARATUS AND SURFACE INSPECTION METHOD

Method of manufacturing silicon wafer

A semiconductor substrate comprising a support substrate which comp...

Manufacturing method for strained silicon wafer

Manufacturing method for strained silicon wafer

Manufacturing method for a silicon substrate having strained layer

Wafer inspection apparatus