Koji Shirai

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 8,890,281
- Issue date Nov 18, 2014
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,779,523
- Issue date Jul 15, 2014
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,624,355
- Issue date Jan 7, 2014
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,421,153
- Issue date Apr 16, 2013
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having on a substrate a diode formed by making...
- Patent number 8,304,827
- Issue date Nov 6, 2012
- Kabushiki Kaisha Toshiba
- Yuki Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for optimizing an industrial product, system for optimizing...
- Patent number 7,584,011
- Issue date Sep 1, 2009
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for optimizing an industrial product, system for optimizing...
- Patent number 7,349,750
- Issue date Mar 25, 2008
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device having a reduced parasitic capacitance bonding...
- Patent number 6,417,558
- Issue date Jul 9, 2002
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double diffused mosfet
- Patent number 6,307,224
- Issue date Oct 23, 2001
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package having reinforced lead pins
- Patent number 5,677,571
- Issue date Oct 14, 1997
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET having gate insulating films whose thickness is different depen...
- Patent number 5,422,505
- Issue date Jun 6, 1995
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MOSFET
- Patent number 5,306,938
- Issue date Apr 26, 1994
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual anode MOS SCR with anti crosstalk collecting region
- Patent number 5,202,573
- Issue date Apr 13, 1993
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with high breakdown voltage
- Patent number 5,191,401
- Issue date Mar 2, 1993
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with latch-up prevention structure
- Patent number 5,122,855
- Issue date Jun 16, 1992
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,108,944
- Issue date Apr 28, 1992
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-type integrated circuit
- Patent number 5,087,954
- Issue date Feb 11, 1992
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved withstanding voltage character...
- Patent number 5,075,754
- Issue date Dec 24, 1991
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing double diffused MOSFET with potential biases
- Patent number 5,059,547
- Issue date Oct 22, 1991
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,008,724
- Issue date Apr 16, 1991
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double diffused mosfet with potential biases
- Patent number 4,884,116
- Issue date Nov 28, 1989
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device IC with DMOS using self-aligned back gate region
- Patent number 4,878,096
- Issue date Oct 31, 1989
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 4,707,720
- Issue date Nov 17, 1987
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130313639
- Publication date Nov 28, 2013
- Kabushiki Kaisha Toshiba
- Koji SHIRAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130270637
- Publication date Oct 17, 2013
- Kanako KOMATSU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130187238
- Publication date Jul 25, 2013
- Kabushiki Kaisha Toshiba
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20130187256
- Publication date Jul 25, 2013
- Kabushiki Kaisha Toshiba
- Koji SHIRAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130181296
- Publication date Jul 18, 2013
- Kabushiki Kaisha Toshiba
- Koji SHIRAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120241858
- Publication date Sep 27, 2012
- Kabushiki Kaisha Toshiba
- Kanako Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120139005
- Publication date Jun 7, 2012
- Kabushiki Kaisha Toshiba
- Takehito IKIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100163973
- Publication date Jul 1, 2010
- Kabushiki Kaisha Toshiba
- Yuki Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for optimizing an industrial product, system for optimizing...
- Publication number 20080140229
- Publication date Jun 12, 2008
- Kabushiki Kaisha Toshiba
- Kazumi Nishinohara
- G05 - CONTROLLING REGULATING
Information Patent Application
Method for optimizing an industrial product, system for optimizing...
- Publication number 20070067056
- Publication date Mar 22, 2007
- Kazumi Nishinohara
- G05 - CONTROLLING REGULATING
Information Patent Application
Semiconductor device having a diffusion layer and a manufacturing m...
- Publication number 20050017301
- Publication date Jan 27, 2005
- Kabushiki Kaisha Toshiba
- Yasunori Iwatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020153564
- Publication date Oct 24, 2002
- KABUSHIKI KAISHA TOSHIBA
- Koji Shirai
- H01 - BASIC ELECTRIC ELEMENTS

Koji Shirai

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device having on a substrate a diode formed by making...

Method for optimizing an industrial product, system for optimizing...

Method for optimizing an industrial product, system for optimizing...

Semiconductor device having a reduced parasitic capacitance bonding...

Double diffused mosfet

Semiconductor package having reinforced lead pins

FET having gate insulating films whose thickness is different depen...

Lateral MOSFET

Dual anode MOS SCR with anti crosstalk collecting region

MOS transistor with high breakdown voltage

Semiconductor device with latch-up prevention structure

Method of manufacturing a semiconductor device

MOS-type integrated circuit

Semiconductor device having improved withstanding voltage character...

Method of manufacturing double diffused MOSFET with potential biases

Semiconductor device

Double diffused mosfet with potential biases

Semiconductor device IC with DMOS using self-aligned back gate region

Semiconductor memory device

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Method for optimizing an industrial product, system for optimizing...

Method for optimizing an industrial product, system for optimizing...

Semiconductor device having a diffusion layer and a manufacturing m...

Semiconductor device